/TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G EconoPACKTM3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACKTM3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT,/IGBT,Inverter /MaximumRatedValues PreliminaryData Collector-emittervoltage Tvj = 25C VCES ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C Repetitivepeakcollectorcurrent tP = 1 ms Totalpowerdissipation TC = 25C, Tvj max = 175C Gate-emitterpeakvoltage 1200 V IC nom 25 A ICRM 50 A Ptot 160 W VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25C Gatecharge VCE sat typ. max. 1,85 2,15 2,25 2,15 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 0,20 C Internalgateresistor Tvj = 25C RGint 0,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,45 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,05 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA td on 0,03 0,03 0,03 s s s tr 0,02 0,025 0,025 s s s td off 0,18 0,27 0,29 s s s tf 0,16 0,17 0,18 s s s () Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 20 nH Tvj = 25C VGE = 15 V, di/dt = 1300 A/s (Tvj = 150C) Tvj = 125C RGon = 20 Tvj = 150C Eon 1,70 2,30 2,40 mJ mJ mJ ( Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 20 nH Tvj = 25C VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C) Tvj = 125C RGoff = 20 Tvj = 150C Eoff 1,40 2,00 2,15 mJ mJ mJ SCdata VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,185 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 1 tP 10 s, Tvj = 150C 90 A 0,95 K/W K/W 150 C /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1200 V IF 25 A IFRM 70 A It 90,0 80,0 /CharacteristicValues min. typ. max. 1,75 1,75 1,75 2,15 As As Forwardvoltage IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1300 A/s (Tvj=150C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C IRM 39,0 40,0 41,0 A A A Recoveredcharge IF = 25 A, - diF/dt = 1300 A/s (Tvj=150C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Qr 2,50 4,20 4,90 C C C Reverserecoveryenergy IF = 25 A, - diF/dt = 1300 A/s (Tvj=150C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Erec 0,90 1,50 1,80 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,26 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 2 V V V 1,35 K/W K/W 150 C /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 10,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 7,5 mm Comperativetrackingindex CTI > 200 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 0,009 LsCE 20 nH RCC'+EE' 2,50 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Weight G 300 g preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 3 max. K/W /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 50 50 Tvj = 25C Tvj = 125C Tvj = 150C 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 45 IC [A] IC [A] 45 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=20,RGoff=20,VCE=600V 50 8 Tvj = 25C Tvj = 125C Tvj = 150C 45 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 7 40 6 35 5 E [mJ] IC [A] 30 25 20 4 3 15 2 10 1 5 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 0 10 20 30 IC [A] preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 4 40 50 /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=25A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 12 1 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 10 ZthJC : IGBT ZthJC [K/W] E [mJ] 8 6 0,1 4 2 0 i: 1 2 3 4 ri[K/W]: 0,057 0,3135 0,304 0,2755 i[s]: 0,01 0,02 0,05 0,1 0 20 40 60 80 100 RG [] 120 140 160 0,01 0,001 180 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=20,Tvj=150C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 60 50 IC, Modul IC, Chip 45 50 Tvj = 25C Tvj = 125C Tvj = 150C 40 35 40 IF [A] IC [A] 30 30 25 20 20 15 10 10 5 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=20,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=25A,VCE=600V 2,5 2,5 Erec, Tvj = 125C Erec, Tvj = 150C Erec, Tvj = 125C Erec, Tvj = 150C 1,5 1,5 E [mJ] 2,0 E [mJ] 2,0 1,0 1,0 0,5 0,5 0,0 0 10 20 30 40 0,0 50 IF [A] , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 10 ZthJC : Diode ZthJC [K/W] 1 0,1 i: 1 2 3 4 ri[K/W]: 0,081 0,4455 0,432 0,3915 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 0,01 0,1 t [s] 1 10 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 6 0 20 40 60 80 100 RG [] 120 140 160 180 /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.0 7 /TechnicalInformation IGBT- IGBT-modules F12-25R12KT4G PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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