EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode
1
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryDataIGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 25 A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 160 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
VCE sat
1,85
2,15
2,25
2,15
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,20 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 0,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,45 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,05 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 20 Ω
td on
0,03
0,03
0,03
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 20 Ω
tr
0,02
0,025
0,025
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 20 Ω
td off
0,18
0,27
0,29
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 20 Ω
tf
0,16
0,17
0,18
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 20 nH
VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C)
RGon = 20 ΩEon
1,70
2,30
2,40
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 20 nH
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)
RGoff = 20 ΩEoff
1,40
2,00
2,15
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt ISC
90
A
Tvj = 150°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,95 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,185 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
2
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF25 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 70 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 90,0
80,0 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
VF
1,75
1,75
1,75
2,15
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
IRM
39,0
40,0
41,0
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Qr
2,50
4,20
4,90
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Erec
0,90
1,50
1,80
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,35 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,26 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
3
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
模块基板材料
Materialofmodulebaseplate Cu
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) Al2O3
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 10,0
mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 7,5
mm
相对电痕指数
Comperativetrackingindex CTI > 200
min. typ. max.
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,009 K/W
杂散电感,模块
Strayinductancemodule LsCE 20 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE' 2,50 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
模块安装的安装扭距
Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm
重量
Weight G300 g
4
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
5
10
15
20
25
30
35
40
45
50
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12 13
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=20Ω,RGoff=20Ω,VCE=600V
IC [A]
E [mJ]
0 10 20 30 40 50
0
1
2
3
4
5
6
7
8
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
5
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=25A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160 180
0
2
4
6
8
10
12
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
ZthJC : IGBT
i:
ri[K/W]:
τi[s]:
1
0,057
0,01
2
0,3135
0,02
3
0,304
0,05
4
0,2755
0,1
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=20Ω,Tvj=150°C
VCE [V]
IC [A]
0 200 400 600 800 1000 1200 1400
0
10
20
30
40
50
60
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
6
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=20Ω,VCE=600V
IF [A]
E [mJ]
0 10 20 30 40 50
0,0
0,5
1,0
1,5
2,0
2,5
Erec, Tvj = 125°C
Erec, Tvj = 150°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=25A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160 180
0,0
0,5
1,0
1,5
2,0
2,5
Erec, Tvj = 125°C
Erec, Tvj = 150°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
10
ZthJC : Diode
i:
ri[K/W]:
τi[s]:
1
0,081
0,01
2
0,4455
0,02
3
0,432
0,05
4
0,3915
0,1
7
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
8
技术信息/TechnicalInformation
F12-25R12KT4G
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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