QS043-402-2/5 94 19 8 9 10 11 12 13 5 3 6 18 19 7 4 13 18.5 18.5 18.5 14 LABEL PMB100E6C 5 6 7 8 9 10 11 12 8.01 4x O2.10 110.00 121.50 118.11 PMB100E6 ollector-mitter oltage ate-mitter oltage 12-fasten tab #110 LABEL 119.60 13.00 7.00 11 12 3 4 20.50 18.5 4.5 10 4.5 10 4.5 10 4.5 10 4.5 10 4.5 25.5 15 7 8 9 10 15 16 21 3.81 15.24 7 17.5 17 5 6 17 14 8 34 3 4 16 17 18 20 1 2 13 19 14 15 61.50 58.42 50.00 40.20 19.05 3.81 CL 2 74 4 21 20 1 86 18 19 PMB100E6 1 2 99.00 94.50 4x 19.05= 76.20 CL 12.62 3.81 19.05 4x O 5.50 19.5 7 14 15 19.5 6 7-M4 16 17 17.5 10 11 12 13 39.00 57.50 2 8 9 5 3 4-O5.5 15.50 17.00 1 Dimension:mm 80 12.62 PMB100E6C ollector ower issipation unction emperature ange torage emperature ange , ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal PMB100E6 . .. PDMB100E6 . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V, = 0V . = 20V,= 0V . ollector-mitter aturation oltage = 100A,= 15V . . ate-mitter hreshold oltage = 5V,= 100mA . . nput apacitance = 10V,= 0V,= 1MH 5,000 witching ime = = = = . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent 300V 3.0 8.2 15V eak orward oltage everse ecovery ime . . . = 100A,= 0V . . = 100A,= -10V i/t= 200A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) 200 VGE=20V VGE=20V Collector Current I C (A) 120 100 10V 80 60 15V 160 11V 140 9V 11V 140 120 10V 100 80 9V 60 40 40 8V 20 0 0 1 2 3 4 8V 20 0 5 0 1 Collector to Emitter Voltage VCE (V) 200A 100A 12 10 8 6 4 2 0 4 8 12 16 IC=50A 14 100A 10 8 6 4 2 0 4 8 16 30000 16 VGE=0V f=1MHZ T C=25C 14 250 10 200 8 200V 150 6 100V 100 4 10000 Capacitance C (pF) 12 VCE =300V 20 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 300 Cies 3000 Coes 1000 Cres 300 2 50 0 12 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 350 200A 12 0 20 Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) RL =3.0( TC=25C 5 T C=125C Gate to Emitter Voltage VGE (V) 400 4 16 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) IC=50A 14 3 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 16 2 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 0 12V 180 15V 160 T C=125C 200 12V 180 Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 0 100 200 300 0 400 100 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 0.6 tf 0.4 2 tON 0.2 0 25 50 75 100 125 ton tf 3 10 10 VCC=300V RG=8.2 ( VGE=15V T C=125C Inductive Load tf tr(Ic) 100 25 50 75 100 125 VCC=300V IC=100A VGE=15V T C=125C Inductive Load 5 2 0.01 1 0.5 toff 0.2 ton 0.1 tf 0.05 tr(IC ) 0.02 150 3 10 Collector Current IC (A) 30 100 300 Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 8 300 VCC=300V RG=8.2( VGE=15V T C=125C Inductive Load 6 4 EON ERR 2 0 25 VCC=300V IC=100A VGE=15V T C=125C Inductive Load 100 EOFF 50 75 100 125 150 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 30 Fig.10- Series Gate Impedance vs. Switching Time 0.1 0 tr(V CE) 0.1 Fig.9- Collector Current vs. Switching Time Switching Time t (s) Switching Time t (s) 0.2 Series Gate Impedance RG (( ) tOFF 0 toff Collector Current IC (A) tON 0.001 0.5 0.02 150 10 1 1 0.05 tr(VCE) 0 VCC=300V IC=100A VGE=15V T C=25C Resistive Load 5 Switching Time t (s) Switching Time t (s) 10 VCC=300V RG=8.2 ( VGE=15V T C=25C Resistive Load tOFF 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 30 EON 10 EOFF 3 ERR 1 0.3 3 Collector Current IC (A) 10 30 100 Series Gate Impedance RG (( ) 00 QS043-402-5/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C Fig.14- Reverse Recovery Characteristics (Typical) 1000 T C=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 200 120 80 40 0 1 2 3 trr 200 100 50 20 5 2 4 IRrM 10 0 100 200 Forward Voltage VF (V) 300 400 500 600 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 500 RG=8.2( , VGE=15V, T C<125C 200 100 Collector Current I C (A) 0 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 160 IF=100A T C=25C T C=125C 500 1 FRD IGBT 3x10 -1 1x10 -1 3x10 -2 1x10 -2 T C=25C 3x10 -3 1 Shot Pulse 1x10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00