SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE *Complementary to MPS8050. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V IC -1.5 A Collector Current 625 *PC Collector Power Dissipation mW 400 Junction Temperature Storage Temperature Range Tj 150 Tstg -55150 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-100A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V VCE=-1V, IC=-5mA 45 170 - hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300 hFE(3) VCE=-1V, IC=-800mA 40 80 - Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz - 15 - pF Collector Output Capacitance Note : hFE(2) Classification 2013. 7. 08 Cob VCB=-10V, f=1MHz, IE=0 B:85160 , C : 120200 , D : 160300 Revision No : 5 1/2 MPS8550 2013. 7. 08 Revision No : 5 2/2