MPS8550 - KEC Corporation

2013. 7. 08 1/2

SEMICONDUCTOR

TECHNICAL DATA

MPS8550

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 5

HIGH CURRENT APPLICATION.

FEATURE

·Complementary to MPS8050.

MAXIMUM RATING (Ta=25℃)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA

Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA

Collector-Base Breakdown Voltage V(BR)CBO IC=-100μA, IE=0 -40 - - V

Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V

DC Current Gain

hFE(1) VCE=-1V, IC=-5mA 45 170 -

hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300

hFE(3) VCE=-1V, IC=-800mA 40 80 -

Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA --0.28 -0.5 V

Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA --0.98 -1.2 V

Base-Emitter Voltage VBE VCE=-1V, IC=-10mA --0.66 -1.0 V

Transition Frequency fTVCE=-10V, IC=-50mA 100 200 - MHz

Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 15 - pF

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage VCBO -40 V

Collector-Emitter Voltage VCEO -25 V

Emitter-Base Voltage VEBO -6 V

Collector Current IC-1.5 A

Collector Power Dissipation *PC

625

400

Junction Temperature Tj150 ℃

Storage Temperature Range Tstg -55～150 ℃

Note : hFE(2) Classification B:85～160 , C : 120～200 , D : 160～300

*Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW