IXGX72N60B3H1 - Zilog

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES 300 μA

VGE = 0V TJ = 125°C 5 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 60A, VGE = 15V, Note 1 1.50 1.80 V

IC = 120A 1.75

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (limited by leads) 75 A

IC110 TC= 110°C72A

ICM TC= 25°C, 1ms 450 A

SSOA VGE = 15V, TVJ = 125°C, RG = 3ΩICM = 240 A

(RBSOA) Clamped inductive load @ VCE ≤ 600V

PCTC= 25°C 540 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque (TO-264) 1.13 / 10 Nm/lb.in.

FCMounting force (PLUS247) 20..120 / 4.5..27 N/lb.

TLMaximum lead temperature for soldering 300 °C

TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C

Weight TO-264 10 g

PLUS247 6 g

DS99869A(06/08)

VCES = 600V

IC110 = 72A

VCE(sat) ≤≤

≤≤

≤£ 1.8V

tfi(typ) = 92ns

IXGK72N60B3H1

IXGX72N60B3H1

GenX3TM 600V IGBT

with Diode

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

Preliminary Technical Information

Features

zOptimized for low conduction and

switching losses

zSquare RBSOA

zAnti-parallel ultra fast diode

zInternational standard packages

Advantages

zHigh power density

zLow gate drive requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

G = Gate C = Collector

E = Emitter TAB = Collector

TO-264 (IXGK)

PLUS247 (IXGX)

(TAB)

GCE

TAB

GDS

E

GC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGK72N60B3H1

IXGX72N60B3H1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs IC= 50A, VCE = 10V, Note 1 45 76 S

Cies 6800 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 575 pF

Cres 80 pF

Qg 225 nC

Qge IC= 60A, VGE = 15V, VCE = 0.5 • VCES 40 nC

Qgc 82 nC

td(on) 31 ns

tri 33 ns

Eon 1.4 mJ

td(off) 152 240 ns

tfi 92 150 ns

Eoff 1.0 2.0 mJ

td(on) 29 ns

tri 34 ns

Eon 2.7 mJ

td(off) 228 ns

tfi 142 ns

Eoff 2.2 mJ

RthJC 0.23 °C/W

RthCS 0.15 °C/W

Inductive load, TJ = 25°°

°°

°C

IC = 50A, VGE = 15V

VCE = 480V, RG = 3Ω

Inductive load, TJ = 125°°

°°

°C

IC = 50A,VGE = 15V

VCE = 480V,RG = 3Ω

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

VF IF = 60A, VGE = 0V, Note 1 1.6 2.0 V

TJ = 150°C 1.4 1.8 V

IRM 8.3 A

trr 140 ns

RthJC 0.3 °C/W

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS247TM (IXGX) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

TO-264 (IXGK) Outline

DIM INCHES MILLIMETERS

MIN MAX MIN MAX

A 0.185 0.209 4.70 5.31

A1 0.102 0.118 2.59 3.00

b 0.037 0.055 0.94 1.40

b1 0.087 0.102 2.21 2.59

b2 0.110 0.126 2.79 3.20

c 0.017 0.029 0.43 0.74

D 1.007 1.047 25.58 26.59

E 0.760 0.799 19.30 20.29

e .215 BSC 5.46 BSC

J 0.000 0.010 0.00 0.25

K 0.000 0.010 0.00 0.25

L 0.779 0.842 19.79 21.39

L1 0.087 0.102 2.21 2.59

ØP 0.122 0.138 3.10 3.51

Q 0.240 0.256 6.10 6.50

Q1 0.330 0.346 8.38 8.79

ØR 0.155 0.187 3.94 4.75

ØR1 0.085 0.093 2.16 2.36

S 0.243 0.253 6.17 6.43

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IF = 60A, VGE = 0V, TJ = 100°C

-diF/dt = 200A/μs, VR = 300V

IXGK72N60B3H1

IXGX72N60B3H1

Fi g . 1. Ou tp u t C h ar acter i stic s

@ 25º C

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

VCE - Volts

IC - Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

330

012345678

VCE - Volts

IC

-

Amperes

V

GE

= 15V

13V

11V

7V

9V

Fi g . 3. Ou tp ut Char acter i stics

@ 125ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

VCE - Volts

IC - Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction T em perature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

VCE(sat) - Normalized

V

GE

= 15V

I

C

= 120A

I

C

= 60A

I

C

= 30A

Fi g . 5. C ol l ect o r-to - Emitt er V ol tag e

vs. Gate-to -Emi tter Vo l tag e

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5 6 7 8 9 101112131415

VGE - Volts

VCE - Volts

I

C

= 120A

60A

30A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

VGE - Volts

IC

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGK72N60B3H1

IXGX72N60B3H1

Fi g . 11. Maximu m Tran si en t Ther mal Imped an ce

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0 20 40 60 80 100 120 140 160 180 200

I

C

- Amperes

g f s -

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200 220 240

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 60A

I

G

= 10mA

Fi g . 10. R ever se-B i as Safe Op er ati n g Ar ea

0

40

80

120

160

200

240

280

100 200 300 400 500 600

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 3

dV / dt < 10V / ns

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXGK72N60B3H1

IXGX72N60B3H1

Fig. 12. Inductive Switching

Ener gy L o ss v s. Ga te R e si sta n ce

0

1

2

3

4

5

6

7

8

0 5 10 15 20 25 30 35 40 45 50 55

R

G

- Ohms

E

off

- MilliJoules

1

2

3

4

5

6

7

8

9

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 480V I

C

= 50A

I

C

=100A

I

C

= 25A

Fig. 15. Inductive Turn-off

Switc h in g Times vs. Gate R esi stance

80

100

120

140

160

180

200

220

240

0 5 10 15 20 25 30 35 40 45 50 55

R

G

- Ohms

t f

- Nanoseconds

100

250

400

550

700

850

1000

1150

1300

t d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 480V

I

C

= 50A

I

C

= 25A

I

C

= 100A

I

C

= 25A, 50A, 100A

Fig. 13. Inductive Switching

Energy Los s vs. Collecto r Curren t

0

1

2

3

4

5

6

7

20 30 40 50 60 70 80 90 100

I

C

- Amperes

E

off

- MilliJoules

0

1

2

3

4

5

6

7

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 3

,

V

GE

= 15V

V

CE

= 480V T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching

Energy Loss vs. Junction Tem perature

0

1

2

3

4

5

6

7

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

0

1

2

3

4

5

6

7

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 3

,

V

GE

= 15V

V

CE

= 480V

I

C

= 50A

I

C

= 100A

I

C

= 25A

Fig. 16. Inductive Turn-off

Switching Times vs. C o l lecto r Current

70

90

110

130

150

170

190

210

230

20 30 40 50 60 70 80 90 100

I

C

- Amperes

t f

- Nanoseconds

130

145

160

175

190

205

220

235

250

t d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

Fig. 17. Inductive T urn-off

Switching T imes vs. Junction Temperature

60

80

100

120

140

160

180

200

220

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

140

155

170

185

200

215

230

245

260

t d(off)

- Nanoseconds

t

r

t

d(off)

- - - -

R

G

= 3



, V

GE

= 15V

V

CE

= 480V

I

C

= 25A, 50A, 100A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGK72N60B3H1

IXGX72N60B3H1

IXYS REF: G_72N60B3(76)06-26-08-C

Fig. 18. Inductive Turn-on

Swit ch i n g Ti mes vs. Gat e R esi stan ce

10

30

50

70

90

110

130

150

170

0 5 10 15 20 25 30 35 40 45 50 55

R

G

- Ohms

t

r - Nanoseconds

20

35

50

65

80

95

110

125

140

t d(on) - Nanoseconds

t

r

t

d(on)

- - - -

TJ = 125ºC, VGE = 15V

VCE = 480V

I C = 100A

I C = 25A

I C = 50A

Fig. 19. Inductive T urn-on

Switch i n g Times vs. C o llecto r C u r r en t

10

20

30

40

50

60

70

80

90

20 30 40 50 60 70 80 90 100

I

C

- Amperes

t

r - Nanoseconds

26

27

28

29

30

31

32

33

34

t d(on) - Nanoseconds

t

r

t

d(on)

- - - -

RG = 3 , VGE = 15V

VCE = 480V

25ºC < TJ < 125ºC

TJ = 25ºC, 125ºC

Fig. 20. Inductive Turn-on

Swit ch i n g Ti mes vs. Ju n ct i o n Temp e r atu r e

0

10

20

30

40

50

60

70

80

90

100

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r - Nanoseconds

25

26

27

28

29

30

31

32

33

34

35

t d(on) - Nanoseconds

t

r

t

d(on

)

- - - -

RG = 3 , VGE = 15V

VCE = 480V

I C = 25A

I C = 50A

I C = 100A

IXGK72N60B3H1

IXGX72N60B3H1

Fi g . 26 Maximum tr an sien t thermal imp ed an ce j u n ctio n to case (fo r d i o d e)

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pul se Wid th [ms]

Z(th )JC - [ ºC / W ]

Fig. 21 Fig. 22

Fig. 24 Fig. 25

Fig. 23

[ s ]

IXYS REF: G_72N60B3(76)06-26-08-C