2SK3150(L) - Renesas Electronics

2SK3150(L), 2SK3150(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-750B (Z)

3rd. Edition

Mar. 2001

Features

• Low on-resistance

RDS =45mΩ typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

4

123

4

LDPAK

G

D

S

2SK3150(L),2SK3150(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 100 V

Gate to source voltage VGSS ±20 V

Drain current ID20 A

Drain peak current ID(pulse)Note1 80 A

Body-drain diode reverse drain current IDR 20 A

Avalanche current IAP Note3 20 A

Avalanche energy EAR Note3 40 mJ

Channel dissipation Pch Note2 50 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

2SK3150(L),2SK3150(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage V(BR)DSS 100 — — V ID = 10mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±20——V I

G

= ±100µA, VDS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±16V, VDS = 0

Zero gate voltege drain

current IDSS ——10µAV

DS = 100 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1mA, VDS = 10V

Static drain to source on state RDS(on) —4560mΩI

D

= 10A, VGS = 10VNote4

resistance RDS(on) —6585mΩI

D

= 10A, VGS = 4V Note4

Forward transfer admittance |yfs| 8.5 14 — S ID = 10A, VDS = 10V Note4

Input capacitance Ciss — 900 — pF VDS = 10V

Output capacitance Coss — 400 — pF VGS = 0

Reverse transfer capacitance Crss — 210 — pF f = 1MHz

Turn-on delay time td(on) — 15 — ns ID = 10A, VGS = 10V

Rise time tr— 120 — ns RL = 3Ω

Turn-off delay time td(off) — 200 — ns

Fall time tf— 150 — ns

Body–drain diode forward

voltage VDF — 0.9 — V IF = 20A, VGS = 0

Body–drain diode reverse

recovery time trr — 90 — ns IF = 20A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SK3150(L),2SK3150(S)

4

Main Characteristics

80

60

40

20

050 100 150 200

100

3

10

1

0.1

0.05 1 2 10 20 100

20

16

12

8

4

012345

0246810

Ta = 25 °C

Tc = 75°C

25°C

–25°C

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in

this area is

limited by R

DS(on)

V = 10 V

Pulse Test

DS

100 µs

1 ms

PW =10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

20

16

12

8

4

3.5 V

3 V

V =2.5 V

GS

10 V Pulse Test

6 V

4 V

0.3

500

30

550

200

0.5

500

2SK3150(L),2SK3150(S)

5

110 100

250

500

20

50

10

250

200

150

100

50

–40 0 40 80 120 160

00.1 0.3 1 3 10 30 100

50

20

5

10

1

2

0.5

205

2.5

2.0

1.5

1.0

0.5

048

12 16 20

I = 15 A

D

5 A

10 A

200

100 V = 4 V

GS

10 V

V = 4 V

GS

10 V

25 °C

Tc = –25 °C

75 °C

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on

)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )mΩ

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature T

c

(°C)

DS(on)

R ( )

Static Drain to Source on State Resistance

mΩ

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Pulse Test

V = 10 V

Pulse Test

DS

Pulse Test

15 A 5,10 A

15 A

5,10 A

2SK3150(L),2SK3150(S)

6

0.1 0.3 1310 30 50 01020304050

2000

10000

1000

100

200

500

200

160

120

80

40

0

20

16

12

8

4

20 40 60 80 100

0

500

50

5

10

2

1

20

200

1000

20

100

10

0.1 0.2 1 210 20

di / dt = 50 A / µs

V = 0, Ta = 25 °C

GS

10

20

50

V = 0

f = 1 MHz

GS

Ciss

Coss

Crss

I = 15 A

DVGS

VDS

V = 100 V

50 V

25 V

DD

tf

r

t

d(on)

t

d(off)

t

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

V = 10 V, V = 30 V

PW = 5 µs, duty < 1 %

GS DD

V = 100 V

50 V

25 V

DD

50

500

0.5 50

5000

100

200

2SK3150(L),2SK3150(S)

7

20

16

12

8

4

00.2 0.4 0.6 0.8 1.0

V = 0, –5 V

GS

10 V

5 V

50

40

30

20

10

25 50 75 100 125 150

0

D. U. T

Rg

I

Monitor

AP

V

Monitor

DS

V

DD

50Ω

Vin

15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1V

V – V

AR AP DSS

DSS DD

2

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

Channel Temperature Tch (°C)

Repetive Avalanche Energy E (mJ)

AR

Maximun Avalanche Energy vs.

Channel Temperature Derating

Avalanche WaveformAvalanche Test Circuit

I = 20 A

V = 50 V

duty < 0.1 %

Rg > 50

AP

DD

Ω

2SK3150(L),2SK3150(S)

8

Vin Monitor

D.U.T.

Vin

10 V

R

L

V

= 30 V

DD

tr

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Waveform

3

1

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

100 m 1 10

s (t)

γ

DM

P

PW

T

D = PW

T

ch – c(t) = s (t) • ch – c

ch – c = 2.5 °C/W, Tc = 25 °C

θ γ θ

θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient Thermal Impedance vs. Pulse Width

2SK3150(L),2SK3150(S)

9

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK3150(L),2SK3150(S)

10

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK3150(L),2SK3150(S)

11

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK3150(L),2SK3150(S)

12

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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