IRF9530NPbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V
trr Reverse Recovery Time 130 190 ns TJ = 25°C, IF = -8.4A
Qrr Reverse RecoveryCharge 650 970 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient -0.11 V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance 0.20 ΩVGS = -10V, ID = -8.4A
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.2 S VDS = -50V, ID = -8.4A
-25 µA VDS = -100V, VGS = 0V
-250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 nA VGS = -20V
QgTotal Gate Charge 58 ID = -8.4A
Qgs Gate-to-Source Charge 8.3 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge 32 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 15 VDD = -50V
trRise Time 58 ID = -8.4A
td(off) Turn-Off Delay Time 45 RG = 9.1Ω
tfFall Time 46 RD = 6.2Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 760 VGS = 0V
Coss Output Capacitance 260 pF VDS = -25V
Crss Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -8.4A, di/dt ≤ -490A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 7.0mH
RG = 25Ω, IAS = -8.4A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-14
-56
A
S
D
G
S
D
G