BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TR ANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPE
■COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output st ages.
The complementary PNP types are BD434,
BD436, and BD438 respectiv ely.
®
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
321
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
VCBO Collector-Base Voltag e (IE = 0) 22 32 45 V
VCES Collector-Emitter Voltage (VBE = 0) 22 32 45 V
VCEO Collector-Emitter Voltage (IB = 0) 22 32 45 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 4 A
ICM Collector Peak Current (t ≤ 1 0 ms) 7A
I
B
Base Current 1 A
Ptot Total Dissipation at Tc ≤ 25 oC36 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PN P types voltage and current values are negative.
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