MITSUBISHI IGBT MODULES CM15MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM15MD-24H IC ..................................................................... 15A VCES ......................................................... 1200V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm P 17.2 P1 N S T 10.16 10.16 10.16 EU EV EW GU GV GW GB GE GU GE G E GB G G G E U V 2 - 4.5 MOUNTING HOLES R B 13 12.5 12.5 15 5 GB GU GV GW E U N E 2 - R5.5 0.6 2 105 0.25 6.3 W 4 9 t = 0.6 115 12 V CIRCUIT DIAGRAM W 15 12.5 12.5 EW GV GW 60 P 15 GW EV 29 0.25 15 GV EU 29 0.25 2.54 2.54 2.54 8 GU B 58 2.54 2.54 2.54 2.54 R S T P1 t = 0.6 45 LABEL MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Feb.1999 http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM15MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation Condition G - E Short C - E Short TC = 25C PULSE TC = 25C PULSE Tf = 25C (Note. 2) (Note. 2) Rating 1200 20 15 30 15 30 66 Unit Rating Unit 1200 20 15 30 66 1200 15 V V A A W V A Rating 1600 440 15 150 93 Unit Rating -40 ~ +150 -40 ~ +125 2500 0.98 ~1.47 100 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current Condition G - E Short C - E Short TC = 25C PULSE Tf = 25C Clamp diode part Clamp diode part (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition 3 rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current V V A A A 2s COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition AC 1 min. Mounting M4 screw Typical value C C V N.m g Feb.1999 http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM15MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART (Tj = 25C) VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 1.5mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 15A, VGE = 15V Tj = 150C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.7 2.45 -- -- -- 75 -- -- -- -- -- -- 0.11 -- -- 0.5 3.4 -- 3.0 2.4 0.6 -- 100 200 150 350 3.5 250 -- 1.9 2.4 A VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 1.5mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 15A, VGE = 15V Tj = 150C -- -- -- -- -- -- -- -- -- -- -- 2.7 2.45 -- -- -- 75 -- -- -- 0.5 3.4 -- 3.0 2.4 0.6 -- 1.5 1.9 1.7 A Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 1.7 Parameter Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) ICES Test conditions (Note. 4) VCE = 10V VGE = 0V VCC = 600V, IC = 15A, VGE = 15V VCC = 600V, IC = 15A VGE1 = VGE2 = 15V RG = 21 Resistive load IE = 15A, VGE = 0V IE = 15A, VGE = 0V die / dt = - 30A / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module Unit mA V nF nF nF nC ns ns ns ns V ns C C/W C/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Condition VCE = 10V VGE = 0V VCC = 600V, IC = 15A, VGE = 15V IF = 15A, Clamp diode part IGBT part Clamp diode part (Note. 4) Unit mA V nF nF nF nC V C/W C/W CONVERTER PART Symbol Parameter Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. Condition VR = VRRM, Tj = 150C IF = 15A Per 1/6 module Unit mA V C/W IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. * The conductive greese applied, between module and fin. * Al plate is used as fin. Feb.1999 http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM15MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20 (V) 15 30 12 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 30 Tj = 25C 11 20 10 10 9 8 7 0 0 1 2 3 4 5 6 7 8 Tj = 25C Tj = 125C 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 VGE = 15V Tj = 25C Tj = 125C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 COLLECTOR-EMITTER VOLTAGE VCE (V) 5 3 2 1 0 10 0 20 8 7 6 IC = 30A 5 IC = 15A 4 3 2 IC = 6A 1 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 Tj = 25C CAPACITANCE Cies, Coes, Cres (nF) 7 5 Tj = 25C 9 0 30 102 EMITTER CURRENT IE (A) 20 0 9 10 VCE = 10V 3 2 101 7 5 3 2 100 1.0 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 VGE = 0V 5 3 2 101 7 5 3 2 Cies 100 7 5 3 2 10-1 Coes Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI IGBT MODULES CM15MD-24H tf 3 td(off) 2 102 7 5 td(on) 3 tr 101 7 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) VCC = 600V VGE = 15V RG = 21 Tj = 125C 2 2 3 5 7 101 2 2 5 5 3 3 2 2 Irr trr 102 100 7 5 7 5 3 3 2 2 2 3 5 7 101 10-1 2 3 5 7 102 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C Rth(j - f) = 1.9C/ W 100 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 - di/dt = 30A / s 7 7 Tj = 25C 101 0 10 5 7 102 3 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT lrr (A) MEDIUM POWER SWITCHING USE INSULATED TYPE 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 100 Rth(j - f) = 2.4C/ W 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 7 5 3 2 TIME (s) VGE - GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 15A 18 VCC = 400V 16 VCC = 600V 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 GATE CHARGE QG (nC) Feb.1999 http://store.iiic.cc/