TLP176D
2007-10-01
1
TOSHIBA Photocoupler GaAs IRED & Photo-MOSFET
TLP176D
Modem in PC
Modem ⋅ Fax Card
Telecommunication
The TOSHIBA TLP176D consists of gallium arsenide infrared emitting
diode optically coupled to a photo-MOSFET in a SOP, which is suitable for
surface mount assembly.
The TLP176D is suitable for modem and PBX applications which require
space savings.
• SOP 4 pin (2.54SOP4): 1-form-A
• Peak off-state voltage: 200 V (min)
• Trigger LED current: 3 mA (max)
• On-state current: 200 mA (max)
• On-state resistance: 8 Ω (max)
• Isolation voltage: 1500 Vrms (min)
• UL recognized: UL1577, file No. E67349
Pin Configuration (top view)
Internal Circuit
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA
Weight: 0.1 g (typ.)
1
2
4
3
1
2
4
3
1: Anode
2: Cathode
3: Drain
4: Drain
12
43
1-form A
TLP176D
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Forward current IF 50 mA
Forward current derating
(Ta ≥ 25°C) ΔIF/°C −0.5 mA/°C
Pulse forward current
(100 μs pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Off-state output terminal voltage VOFF 200 V
On-state current ION 200 mA
On-state RMS current derating
(Ta ≥ 25°C) ΔION/°C −2.0 mA/°C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −40 to 85 °C
Lead soldering temperature (10 s) Tsol 260 °C
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note)
BVS 1500 Vrms
Note: Using continuously under h eavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decreas e in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliabil ity upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage VDD ⎯ 150 200 V
Forward current IF 5 7.5 25 mA
On-state current ION ⎯ ⎯ 130 mA
Operating temperature Topr −20
⎯ 65 °C
Note: Recommended operating conditions are given as a design g uid eline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP176D
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V ⎯ ⎯ 10 μA
LED
Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF
Off-state current IOFF V
OFF = 200 V ⎯ ⎯ 1 μA
Detector Capacitance COFF V = 0, f = 1 MHz ⎯ 100 ⎯ pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Trigger LED current IFT I
ON = 200 mA ⎯ 1 3 mA
On-state resistance RON I
ON = 200 mA, IF = 5 mA ⎯ 5 8 Ω
Isolation Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Capacitance input to output CS V
S = 0, f = 1 MHz ⎯ 0.8 ⎯ pF
Isolation resistance RS V
S = 500 V, R.H. ≤ 60% 5 ×
1010 1014 ⎯ Ω
AC, 1 minute 1500 ⎯ ⎯
AC, 1 second, in oil ⎯ 3000 ⎯ Vrms
Isolation voltage BVS
DC, 1 minute, in oil ⎯ 3000 ⎯ Vdc
Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Turn-on time tON RL = 200 Ω (Note)
VDD = 20 V, IF = 5 mA ⎯ 0.6 1.5 ms
Turn-off time tOFF RL = 200 Ω (Note)
VDD = 20 V, IF = 5 mA ⎯ 0.1 1.0 ms
Note: Switching time test circuit
4
3
1
2
IF VDD
VOUT
RL
10%
IF
VOUT
tON
90%
tOFF
TLP176D
2007-10-01
4
60
100
0
−20 0 20 40 60 80 100
80
40
20
5
0
−40 −20 0 40 60 80 100
4
3
2
ION = 200 mA
t < 1 s
1
20
−20 0 20 40 60 80 100
350
0
250
200
50
300
150
100
10
0
−20 0 20 40 60 80 100
8
4
2
ION = 200 mA
IF = 5 mA
t < 1 s
6
IF – Ta
ION – Ta
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
MOSFET ON-state current ION (mA)
IF – VF
ION – VON
Forward voltage VF (V)
MOSFET ON-state voltage VON (V)
Allowable forward current
IF (mA)
MOSFET ON-state current ION (mA)
RON – Ta
IFT – Ta
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
MOSFET ON-state resistance RON (Ω)
Relative trigger LED current
IFT/IFT (Ta = 25°C)
100
0.1
0.6
0.3
30
10
3
1
0.8 1.0 1.4
1.6 1.8
1.2
Ta = 25°C
−300
−1 −0.5
−200
0.5 1
−100
300
0
100
200
Ta = 25°C
IF = 5 mA
0
TLP176D
2007-10-01
5
3000
10
1
1000
300
100
3 5 10 30 100 500
50
tOFF
30
300
Ta = 25°C
VDD = 20 V
RL = 200 Ω
tON
tON, tOFF – IF
tON, tOFF – Ta
Forward current IE (mA)
Ambient temperature Ta (°C)
Switching time tON, tOFF (μs)
Switching time tON, tOFF (μs)
IOFF – Ta
Ambient temperature Ta (°C)
MOSFET OFF-state current IOFF (mA)
3000
10
−40
1000
300
100
30
−20 0 20 40 60 80 100
VDD = 20 V
RL = 200 Ω
IF = 5 mA
100
1
−20
3
30
10
0 20 60
80 120
40
VOFF = 200 V
100
TLP176D
2007-10-01
6
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refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the
specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.
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