BLF8G27LS-140V,112 - AMPLEON

1. Product profile

1.1 General description

140 W LDMOS power transistor with improved video bandwidth for base station

applications at frequencies from 2600 MHz to 2700 MHz.

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low thermal resistance providing excellent thermal stability

Decoupling leads to enable improved video bandwidth (100 MHz typical)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

RF power amplifier for W-CDMA base stations and multi carrier applications in the

2600 MHz to 2700 MHz frequency range

BLF8G27LS-140V

Power LDMOS transistor

Rev. 4 — 1 September 2015 Product data sheet

Table 1. Typical performance

Ty pical RF performance at Tcase = 25



C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) GpDACPR

(MHz) (mA) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 30 32 [1]

2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 33 [1]

Product data sheet Rev. 4 — 1 September 2015 2 of 12

BLF8G27LS-140V

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

[1] Continuous use at maximum temperature will affect MTTF.

5. Recommended operating conditions

6. Thermal characteristics

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain

2gate

3source [1]

4,5 video decoupling

6n.c.

7n.c.

154

aaa-003884

1, 4, 5

Table 3. Ordering information

Type number Package

Name Description Version

BLF8G27LS-140V - earless flanged LDMOST ceramic package; 6 leads SOT1120B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Tcase case temperature [1] - 150 C

Table 5. Operating conditions

Symbol Parameter Conditions Min Typ Max Unit

Tcase case temperature 40 - +125 C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 55 W 0.27 K/W

Product data sheet Rev. 4 — 1 September 2015 3 of 12

BLF8G27LS-140V

Power LDMOS transistor

7. Characteristics

8. Test information

8.1 Ruggedness in class-AB operation

The BLF8G27LS-140V is capable to withstand a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;

IDq = 1300 mA; PL= 180 W (CW); f = 2620 MHz.

8.2 Impedance information

[1] ZS and ZL defined in Figure 1.

Table 7. DC characteristics

Tj = 25



C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=2.16mA 65 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 216 mA 1.5 1.9 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 4.2 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V

-40-A

IGSS gate leakage current VGS = 11 V; VDS =0V - - 420 nA

gfs forward transconductance VDS =10V; I

D= 10.8 A - 16 - S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID=7.56A

-0.06-

Table 8. RF characteristics

Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;

64 DPCH; f1 = 2627.5 MHz; f2 = 2687.5 MHz; RF performance at VDS = 32 V; IDq = 1300 mA;

Tcase = 25



C; unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain PL(AV) = 45 W 15.8 17.4 18.7 dB

RLin input return loss PL(AV) = 45 W - 18 8dB

Ddrain efficiency PL(AV) = 45 W 27 30 - %

ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 45 W - 32 29 dBc

Table 9. Typical impedance

IDq = 1300 mA; main transistor VDS = 32 V.

f ZS[1] ZL[1]

(MHz) () ()

2600 2.0  j4.8 1.4  j3.1

2700 3.5  j4.8 1.4  j3.1

Product data sheet Rev. 4 — 1 September 2015 4 of 12

BLF8G27LS-140V

Power LDMOS transistor

8.3 VBW in class-AB operation

The BLF8G27LS-140V shows 100 MHz (typical) video bandwidth in class-AB test circuit

in 2.6 GHz to 2.7 GHz band at VDS = 32 V and IDq = 1.3 A.

8.4 Test circuit

Fig 1. Definition of transistor impedance

001aaf059

drain

gate

Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.765 mm;

thickness copper plating = 35 m.

See Table 10 for a list of components.

Fig 2. Component layout for class-AB production test circuit

Table 10. List of components

For test circuit see Figure 2.

Component Description Value Remarks

C1, C2, C3, C4, C13 multilayer ceramic chip capacitor 10 pF [1] ATC100B

C14 multilayer ceramic chip capacitor 0.5 pF [1] ATC100B

C5, C6 multilayer ceramic chip capacitor 1 F, 50 V [2] Murata

C7, C8 multilayer ceramic chip capacitor 10 F, 50 V [2] Murata

C9 multilayer ceramic chip capacitor 4.7 F, 50 V [2] Murata

aaa-006399

60 mm

40 mm 40 mm

C11

C14

C12

C13

C15

Product data sheet Rev. 4 — 1 September 2015 5 of 12

BLF8G27LS-140V

Power LDMOS transistor

[1] American Technical Ceramics type 100B or capacitor of same quality.

[2] Murata or capacitor of same quality.

8.5 Graphical data

8.5.1 CW pulse

C11, C12 multilayer ceramic chip capacitor 4.7 F, 50 V [2] Murata

C15 electrolytic capacitor 470 F, 63 V

R1 chip resistor 3.9 Philips SMD 1206

Table 10. List of components …continue d

For test circuit see Figure 2.

Component Description Value Remarks

VDS = 32 V; IDq = 1300 mA; tp= 100 s; =10%.

(1) f = 2620 MHz

(2) f = 2655 MHz

(3) f = 2690 MHz

VDS = 32 V; IDq = 1300 mA; tp= 100 s; =10%.

(1) f = 2620 MHz

(2) f = 2655 MHz

(3) f = 2690 MHz

Fig 3. Power gain and drain efficiency as function of

load power; typical values

Fig 4. Input return loss as a function of load power;

typical values

aaa-006400

28 32 36 40 44 48 52 56

14 0

15 10

16 20

17 30

18 40

19 50

20 60

PL (dBm)

(dB)(dB)(dB)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

ηD

aaa-006401

28 32 36 40 44 48 52 56

-25

-20

-15

-10

-5

PL (dBm)

RLinin

RLin

(dB)(dB)(dB)

(1)(1)(1)

(2)

(2)(2)

(3)

(3)(3)

Product data sheet Rev. 4 — 1 September 2015 6 of 12

BLF8G27LS-140V

Power LDMOS transistor

8.5.2 2-Carrier W-CDMA

VDS = 32 V; IDq = 1300 mA.

(1) f = 2620 MHz

(2) f = 2655 MHz

(3) f = 2690 MHz

VDS = 32 V; IDq = 1300 mA.

(1) f = 2620 MHz

(2) f = 2655 MHz

(3) f = 2690 MHz

Fig 5. Power gain and drain efficiency as function of

load power; typical values

Fig 6. Adjacent channel power ratio (5MHz) and

adjacent channel power ratio (10MHz) as

function of load power; typical values

VDS = 32 V; IDq = 1300 mA.

(1) f = 2620 MHz

(2) f = 2655 MHz

(3) f = 2690 MHz

Fig 7. Peak-to-average power ratio as a function of load power; typical values

aaa-006402

28 32 36 40 44 48 52 56

13 -10

14 0

15 10

16 20

17 30

18 40

19 50

PL (dBm)

(dB)(dB)(dB)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

ηD

aaa-006403

28 32 36 40 44 48 52 56

-60 -60

-50 -50

-40 -40

-30 -30

-20 -20

-10 -10

PL (dBm)

ACPR

ACPR5M5M

ACPR5M

(dB)(dB)(dB)

ACPR

ACPR10M10M

ACPR10M

(dB)(dB)(dB)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

ACPRACPR5M5M

ACPR5M

ACPRACPR10M10M

ACPR10M

aaa-006404

28 32 36 40 44 48 52 56

PL (dBm)

PAR

PARPAR

(dB)

(dB)(dB)

(3)(3)(3)

(2)(2)(2)

(1)(1)(1)

Product data sheet Rev. 4 — 1 September 2015 7 of 12

BLF8G27LS-140V

Power LDMOS transistor

8.5.3 2-Tone VBW

VDS = 32 V; IDq = 1300 mA; f = 2655 MHz.

(1) low

(2) high

Fig 8. VBW capability in class-AB test circuit

aaa-006405

1 10 102

-70

-50

-30

-10

carrier spacing (MHz)

IMD

IMDIMD

(dBc)

(dBc)(dBc)

(1)(1)(1) (2)(2)(2)

IMD3IMD3IMD3

IMD5

IMD5IMD5

IMD7

IMD7IMD7

Product data sheet Rev. 4 — 1 September 2015 8 of 12

BLF8G27LS-140V

Power LDMOS transistor

9. Package outline

Fig 9. Package outline SOT1120B

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1120B

sot1120b_po

12-06-14

13-10-21

Unit(1)

max

nom

min

4.75

3.45

1.83

1.57

0.18

0.10

20.02

19.61

19.96

19.66

9.53

9.27

1.14

0.89

19.94

18.92

9.91

9.65

Dimensions

Earless flanged LDMOST ceramic package; 6 leads SOT1120B

12.83

12.57

cDD

1EE

9.53

9.25

FHL

3.56

3.30

Q(2)

1.70

1.45

20.70

20.45

0.51

inches

max

nom

min

0.187

0.136

0.072

0.062

0.007

0.004

0.788

0.772

0.786

0.774

0.375

0.365

0.045

0.035

0.785

0.745

0.39

0.38

0.505

0.495

0.375

0.364

0.140

0.130

0.067

0.057

0.815

0.805

9.53

8.71

0.375

0.343

4.60

4.32

0.181

0.170

0.02

0.10

0.004

w2ZyZ

15.52

14.50

0.611

0.571

64°

60°

64°

60°

0 5 10 mm

scale

LD1D

Dw2

b1Q

Z1E

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

Product data sheet Rev. 4 — 1 September 2015 9 of 12

BLF8G27LS-140V

Power LDMOS transistor

10. Abbreviations

11. Revision history

Table 11. Abbreviations

Acronym Description

3GPP 3rd Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical CHannel

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal Oxide Semiconductor

LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor

MTTF Mean Time To Failure

PAR Peak-to-Average Ratio

SMD Surface Mounted Device

VBW Video BandWidth

VSWR Voltage Standing Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF8G27LS-140V#4 20150901 Product data sheet BLF8G27LS-140V v.3

Modifications: •The format of this document has been redesigned to comply with the new identity

guidelines of Ampleon.

•Legal texts have been adapted to the new company name where appropriate.

BLF8G27LS-140V v.3 20150501 Product data sheet - BLF8G27LS-140V v.2

BLF8G27LS-140V v.2 20130327 Product data sheet - BLF8G27LS-140V v.1

BLF8G27LS-140V v.1 20130307 Product data sheet - -

Product data sheet Rev. 4 — 1 September 2015 10 of 12

BLF8G27LS-140V

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

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lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

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Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

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warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

Ampleon product can reasonably be expected to result in personal injury,

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

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fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

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hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

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Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 4 — 1 September 2015 11 of 12

BLF8G27LS-140V

Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’ warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

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such use shall be solely at customer’s own risk, and (c) customer fully

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applications beyond Ampleon’ standard warranty and Ampleon’ product

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Translations — A non-English (translated) version of a document is for

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between the translated and English versions.

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Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own Any

reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

13. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLF8G27LS-140V

Power LDMOS transistor

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLF8G27LS-140V#4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Recommended operating conditions. . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3

8.1 Ruggedness in class-AB operation . . . . . . . . . 3

8.2 Impedance information . . . . . . . . . . . . . . . . . . . 3

8.3 VBW in class-AB operation . . . . . . . . . . . . . . . 4

8.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

8.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5

8.5.1 CW pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8.5.2 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6

8.5.3 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12