MJ15015 (NPN) & MJ15016 (PNP)
Silicon Complementary Transistors
General Purpose High Power Audio,
Disk Head Positioner for Linear Applications
Description:
The MJ15015 (NPN) and MJ15016 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
DHigh Safe Operating Area
DHigh Current−Gain − Bandwidth
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 120V.....................................................
Collector−Emitter Voltage Base, VCEV 200V................................................
Collector−Base Voltage, VCBO 200V......................................................
Emitter−Base Voltage, VEBO 7V..........................................................
Collector Current − Continuous, IC15A....................................................
Continuous Base Current, IB7A..........................................................
Total Power Dissipation (TC = +25°C), PD180W...........................................
Derate Above 25°C 1.03W/°C......................................................
Operating Junction Temperature Range, TJ−65° to +200°C..................................
Storage Temperature Range, Tstg −65° to +200°C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.52 to 0.98°C/W.............................
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 3 120 − − V
Collector Cutoff Current ICEO VCE = 60V, VBE(off) = 0V − − 0.1 mA
ICEV VCEV = Rated Value, VBE(off) = 1.5V,
Note 3
− − 1 mA
ICEV VCEV = Rated Value, VBE(off) = 1.5V,
TC = 150°C
− − 6 mA
Emitter Cutoff Current IEBO VEB = 7V, IC = 0 − − 0.2 mA
Electrical Characteristics, Cont’d: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
IS/b VCE = 60V, Note 1 3− − A
ON Characteristics
DC Current Gain hFE VCE = 2V, IC = 4A 10 −70
VCE = 4V, IC = 4A 20 −70
VCE = 4V, IC = 10A 5− −
Collector−Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 400mA − − 1.1 V
IC = 10A, IB = 3.3A − − 3.0 V
IC = 15A, IB = 7A − − 5.0 V
Base−Emitter On Voltage VBE(on) VCE = 4V, IC = 4A 0.7 −1.8 V
Dynamic Characteristics
Current−Gain − Bandwidth Product
MJ15015
fTVCE = 4V, IC = 1A, f = 1MHz 0.8 −6 MHz
MJ15016 2.2 −18 MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz 60 −600 pF
Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
