HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200210
Issued Date : 2001.01.01
Revised Date : 2002. 05.08
Page No. : 1/3
HMJE13003 HSMC Produc t Specification
HMJE13003
NPN EPITAXIAL PLANAR TRANSISTOR
Description
• High Voltage, High Speed Power Switch
• Switch Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflec tion Circuits
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper atur e............................................................................................ -50 ~ +150 °C
Junction Temper ature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 40 W
• Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 9 V
IC Collector Current ........................................................................................ Continuous 1.5 A
IB Base Current............................................................................................. Continuous 0.75 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEX 700 - - V IC=1mA, VBE(of f)= 1. 5V
BVCEO 400 - - V IC=10mA
IEBO - - 1 mA VEB=9V
ICEX - - 1 mA VCE=700V, VBE(off)=1.5V
*VCE(sat)1 - - 500 mV IC=0.5A, IB=0.1A
*VCE(sat)2 - - 1 V IC=1A, IB=0.25A
*VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A
*VBE(sat) - - 1 V IC=0.5A, IB=0.1A
*VBE(sat) - - 1.2 V IC=1A, IB=0.25A
*hFE1 8 - 40 IC=0.5A, VCE= 2V
*hFE2 5 - 25 IC=1A, VCE=2V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
TO-126
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200210
Issued Date : 2001.01.01
Revised Date : 2002. 05.08
Page No. : 2/3
HMJE13003 HSMC Produc t Specification
Characteristics Curve
Current G ain & Col lect or Current
1
10
100
0.1 1 10 100 1000 10000
Collector Curren t-I
C
(mA)
hFE
25
o
C
75
o
C125
o
C
hFE @ V
CE
=2V
Saturation Voltage & Collector Current
10
100
1000
1 10 100 1000 10000
Coll e c tor Curr e nt-I
C
(mA)
Saturation Voltage (mV)
25oC
75oC
125oC
VCE(sat) @ IC=3IB
Saturation Voltage & Collector Current
10
100
1000
10000
1 10 100 1000 10000
Coll e c tor Current - I
C
(mA)
Saturation Voltage (mV)
125
o
C
75
o
C
25
o
C
V
CE(sat)
@ I
C
=4I
B
Satura tion Voltage & Collector Current
10
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
Saturation Vpltage (mV)
25oC
125oC
75oC
VCE(sat) @ IC=5IB
Saturation Voltage & Collect or Current
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
Saturation Voltage (mV)
125oC
25oC
75oC
VBE(sat) @ IC=4IB
Saturation Voltage & Collect or Current
100
1000
10000
1 10 100 1000 10000
Coll e c tor Current - I
C
(mA)
Sat u r ation Volt ag e (m V)
25
o
C
75
o
C
125
o
C
V
BE(sat)
@ I
C
=5I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200210
Issued Date : 2001.01.01
Revised Date : 2002. 05.08
Page No. : 3/3
HMJE13003 HSMC Produc t Specification
TO-126 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
α1-*3°-*3°F 0.0280 0.0319 0.71 0.81
α2-*3°-*3°G 0.0480 0.0520 1.22 1.32
α3-*3°-*3°H 0.1709 0.1890 4.34 4.80
α4-*3°-*3°I 0.0950 0.1050 2.41 2.66
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 A l l oy; solder pl ating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HS MC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri a l Park Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
A
B
C
F
DE
H
123
KJ I
α3
α4
L
M
α1
α2
G
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-126 Plastic Package
HSMC Packa
g
e Code: T
Marking:
Date Code Control Code
HE
130
MJ
03
