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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RFD3055LE, RFD3055LESM Data Sheet N-Channel Logic Level Power MOSFET 60V, 11A, 107 m These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158. September 2013 Features * 11A, 60V * rDS(ON) = 0.107 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information PART NUMBER D PACKAGE BRAND RFD3055LE TO-251AA F3055L RFD3055LESM9A TO-252AA F3055L G S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) (c)2002 Fairchild Semiconductor Corporation DRAIN (FLANGE) GATE SOURCE RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD3055LE, RFD3055LESM9A 60 60 16 11 Refer to Peak Current Curve Refer to UIS Curve 38 0.25 -55 to 175 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg UNITS V V V A W W/oC oC oC oC 300 260 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS ID = 250A, VGS = 0V 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 1 - 3 V VDS = 55V, VGS = 0V - - 1 A VDS = 50V, VGS = 0V, TC = 150oC - - 250 A VGS = 16V - - 100 nA ID = 8A, VGS = 5V (Figure 11) - - 0.107 VDD 30V, ID = 8A, VGS = 4.5V, RGS = 32 (Figures 10, 18, 19) - - 170 ns Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) rDS(ON) Turn-On Time tON Turn-On Delay Time - 8 - ns tr - 105 - ns td(OFF) - 22 - ns tf - 39 - ns td(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time TEST CONDITIONS tOFF Total Gate Charge Gate Charge at 5V Threshold Gate Charge VDD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 20, 21) - - 92 ns - 9.4 11.3 nC Qg(TOT) VGS = 0V to 10V Qg(5) VGS = 0V to 5V - 5.2 6.2 nC Qg(TH) VGS = 0V to 1V - 0.36 0.43 nC VDS = 25V, VGS = 0V, f = 1MHz (Figure 14) - 350 - pF - 105 - pF Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS - 23 - pF Thermal Resistance Junction to Case RJC - - 3.94 oC/W Thermal Resistance Junction to Ambient RJA TO-220AB - - 62 oC/W TO-251AA, TO-252AA - - 100 oC/W TYP MAX UNITS ISD = 8A - 1.25 V ISD = 8A, dISD/dt = 100A/s - 66 ns Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage VSD Diode Reverse Recovery Time trr TEST CONDITIONS MIN NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). (c)2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 15 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 VGS = 10V 10 VGS = 4.5V 5 0.2 0 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 ZJC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE 200 10 IDM, PEAK CURRENT (A) ID, DRAIN CURRENT (A) 100 100s OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA (c)2002 Fairchild Semiconductor Corporation 200 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 175 - TC 150 VGS = 5V 10 1 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Typical Performance Curves Unless Otherwise Specified (Continued) 15 VGS = 10V If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 VGS = 5V 12 9 VGS = 3.5V 6 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 3 0.01 0.1 1 10 VGS = 3V TC = 25oC 0 0.001 VGS = 4V 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) 4 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322 FIGURE 7. SATURATION CHARACTERISTICS FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING 150 15 ID, DRAIN CURRENT (A) 12 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 9 TJ = 25oC 6 3 TJ = 175oC ID = 3A ID = 5A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 120 90 TJ = -55oC 0 60 2 3 4 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 8. TRANSFER CHARACTERISTICS 10 FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 150 2.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 4.5V, VDD = 30V, ID = 8A SWITCHING TIME (ns) ID = 11A tr 100 tf 50 td(OFF) td(ON) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 VGS = 10V, ID = 11A 0.5 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () FIGURE 10. SWITCHING TIME vs GATE RESISTANCE (c)2002 Fairchild Semiconductor Corporation 50 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 11. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Typical Performance Curves Unless Otherwise Specified (Continued) 1.2 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250A 1.0 0.8 1.1 1.0 0.9 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) -80 200 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 10 VGS , GATE TO SOURCE VOLTAGE (V) 1000 CISS = CGS + CGD C, CAPACITANCE (pF) ID = 250A COSS CDS + CGD 100 VGS = 0V, f = 1MHz CRSS = CGD 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 11A ID = 5A ID = 3A 2 0 60 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 8 0 10 0.1 VDD = 30V 2 4 6 Qg, GATE CHARGE (nC) 8 10 NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP + RG VDS IAS VDD VDD - VGS DUT 0V tP IAS 0 0.01 tAV FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation FIGURE 17. UNCLAMPED ENERGY WAVEFORMS RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Test Circuits and Waveforms (Continued) tON tOFF td(ON) VDS td(OFF) tf tr VDS 90% 90% RL VGS + - DUT 10% 0 VDD 10% 90% RGS VGS VGS 0 10% FIGURE 18. SWITCHING TEST CIRCUIT 50% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS VDS VDD RL Qg(TOT) VDS Qg(10) OR Qg(5) VGS + VDD VGS DUT Ig(REF) VGS = 2V 0 VGS = 1V FOR L2 DEVICES Qg(TH) VGS = 20V VGS = 10V FOR L2 DEVICES VGS = 10V VGS = 5V FOR L2 DEVICES Ig(REF) 0 FIGURE 20. GATE CHARGE TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation FIGURE 21. GATE CHARGE WAVEFORMS RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM PSPICE Electrical Model .SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95 CA 12 8 3.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.25e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD LDRAIN DPLCAP DRAIN 2 5 10 5 51 ESLC 11 - RDRAIN 6 8 EVTHRES + 19 8 + LGATE GATE 1 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD + 17 EBREAK 18 50 ESG EVTEMP RGATE + 18 22 9 20 21 DBODY - 16 MWEAK 6 MMED MSTRO RLGATE LSOURCE CIN 8 SOURCE 3 7 RSOURCE RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.7e-2 RGATE 9 20 3.37 RLDRAIN 2 5 10 RLGATE 1 9 54.2 RLSOURCE 3 7 25.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.50e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B DBREAK + RSLC2 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 5.42e-9 LSOURCE 3 7 2.57e-9 RLDRAIN RSLC1 51 EBREAK 11 7 17 18 67.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 RLSOURCE S1A 12 S2A 13 8 14 13 S1B CA RBREAK 15 17 18 RVTEMP S2B 13 CB 6 8 EGS - 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD 19 - IT 14 + + VBAT 5 8 EDS - + 8 22 RVTHRES VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))} .MODEL DBODYMOD D (IS = 1.75e-13 RS = 1.75e-2 TRS1 = 1e-4 TRS2 = 5e-6 CJO = 5.9e-10 TT = 5.45e-8 N = 1.03 M = 0.6) .MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6) .MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81) .MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37) .MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.78 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5) .MODEL RSLCMOD RES (TC1 = 0 TC2 = 0) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6) .MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -4 VOFF= -2.5) VON = -2.5 VOFF= -4) VON = -0.5 VOFF= 0) VON = 0 VOFF= -0.5) .ENDS For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. (c)2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) SM BitSiCTM Global Power Resource PowerTrench GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) GTOTM Quiet SeriesTM CTLTM TINYOPTOTM IntelliMAXTM RapidConfigureTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM EcoSPARK(R) Saving our world, 1mW/W/kW at a timeTM and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM SuperSOTTM-3 mWSaver FACT(R) UniFETTM SuperSOTTM-6 OptoHiTTM FAST(R) VCXTM SuperSOTTM-8 OPTOLOGIC(R) FastvCoreTM VisualMaxTM OPTOPLANAR(R) SupreMOS(R) FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM Rev. C0 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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