S DP /B 55N02 S amHop Microelectronics C orp. Augus t , 2002 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS (on) ( m W ) ID TYP S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. 20V 55A 14 @ V G S = 4.5V TO-220 & TO-263 package. D D G G D S S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 12 V ID 55 A IDM 165 A Drain-S ource Diode Forward C urrent IS 55 A Maximum P ower Dissipation @ Tc=25 C Derate above 25 C PD 75 0.5 W W/ C T J , T S TG -65 to 175 C Thermal R esistance, Junction-to-C ase R JC 2 C /W Thermal R esistance, Junction-to-Ambient R JA 62.5 C /W Drain C urrent-C ontinuous -P ulsed @ TJ=125 C a Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S 1 S DP /B 55N02 E LE CTR ICAL CHAR ACTE R IS TICS (T C = 25 C unless otherwise noted) Parameter C Min Typ Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 10 Gate-Body Leakage IGS S V GS = 8V, V DS =0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) V GS = 4.5V, ID = 21A On-S tate Drain Current ID(ON) gFS V DS = 10V, V GS = 10V OFF CHAR ACTE R IS TICS 20 V uA ON CHAR ACTE R IS TICS a Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time 1 1.5 V 14 19 m ohm A 55 53 S 1100 PF 600 PF 180 PF 50 ns 62.5 ns 200 ns ns b Input Capacitance Turn-On Delay Time V DS = 10V, ID = 26A 0.9 V DS =15V, V GS = 0V f =1.0MH Z b tD(ON) tr tD(OFF) V DD = 10V, ID = 1A, V GS = 10V R GE N = 6 ohm Fall Time tf 89 Total Gate Charge Qg 18.2 Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =10V, ID = 30A, V GS =4.5V 2 25 nC 5.3 nC 2.2 nC 4 S DP /B 55N02 E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage V GS = 0V, Is =26A VSD 1.3 0.9 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 80 75 -55 C 60 I D , Drain C urrent (A) ID , Drain C urrent(A) 70 V G S =10,9,8,7,6,5,4V 60 50 40 30 V G S =3V 20 45 25 C 30 15 T J =125 C 10 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 2 3 4 5 6 F igure 2. Trans fer C haracteris tics F igure 1. Output C haracteris tics 1.60 R DS (ON) , Normalized Drain-S ource On-R es is tance 3000 2500 C , C apacitance (pF ) 1 V G S , G ate-to-S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) 2000 1500 C is s 1000 C os s 500 C rs s 0 0 5 10 15 20 25 30 1.40 I D =26A V G S =10V 1.20 1.00 0.80 0.60 0.40 -50 -25 0 25 50 75 100 125 150 V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 V 1.10 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S DP /B 55N02 V DS =V G S I D =250uA 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 4 1.02 1.00 0.98 0.96 0.94 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 50 40 Is , S ource-drain current (A) gF S , T rans conductance (S ) I D =250uA 1.04 T j, J unction T emperature ( C ) 50 30 20 V DS =10V 10 10 1.0 0.1 0 0 10 20 30 0.4 40 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 300 200 100 10 V DS =10V I D =30A 8 I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 1.06 6 4 2 0 0 3 6 9 12 15 18 21 R L im it 10 1 0 1m s s 10 ms 10 0 D C ms 10 0.5 0.1 24 D S( ) ON V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) Qg, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S DP /B 55N02 4 V DD ton RL V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.01 0.1 1 10 100 t2 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t) Duty C ycle, D=t1/t2 1000 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10000