• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 528, REV. B
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Reverse Leakage
200°C Operating Temperature
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Ultra low Reverse Leakage Current
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
• Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 100 V
Max. Average Forward
Current
IF(AV) 50% duty cycle, rectangular
wave form
15 A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM 8.3 ms, half Sine wave (1) 280 A
Non-Repetitive Avalanche
Energy
EAS TJ = 25 °C, IAS = 0.53 A,
L = 56 mH
8.0 mJ
Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
0.53 A
Max. Junction Temperature TJ - -65 to +200 °C
Max. Storage Temperature Tstg - -65 to +200 °C
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop VF1 @ 15A, Pulse, TJ = 25 °C 0.84 V
V
F2 @ 15A, Pulse, TJ = 125 °C 0.68 V
Max. Reverse Current IR1 @VR = 100V, Pulse,
TJ = 25 °C
10 µA
I
R2 @VR = 100V, Pulse,
TJ = 125 °C
1.0 mA
Max. Junction Capacitance CT @VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
500 pF
(1) in SHD package
SD125SCU100A/B/C
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
TECHNICAL DATA
DATA SHEET 528, REV. B
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage Drop - V
F (V)
10-2
10-1
100
101
Instantaneous Forward Current - IF (A)
Typical Forward Characteristics
125 °C
200 °C
175 °C
25 °C
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
10-4
10-3
10-2
10-1
100
101
Instantaneous Reverse Current - IR (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
200 °C
175 °C
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
100
200
300
400
Junction Capacitance - CT (pF)
Typical Junction Capacitance
SD125SCU100A/B/C
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
TECHNICAL DATA
DATA SHEET 528, REV. B
Mechanical Dimensions: In Inches / mm
SD125SCU100A/B/C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
A B D H h
0.125±0.003 0.116±0.003 0.070±0.005 0.0155±0.001 0.010±0.002
D
h
H
B
A
Fi
g
ure 1 Fi
g
ure 2
Top side(Anode) metallization:
A = Al - 25 kÅ minimum, Figure 1
B = Ag - 30 kÅ minimum, Figure 1
C = Au - 12 kÅ min, Figure
Bottom side (Cathode) metallization:
A, B, C = Ti/Ni/Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
