BLF647
UHF power LDMOS transistor
teehs atad tcudorP5102 rebmetpeS 1 — 4 .veR
IMPORTANT NOTICE
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2001 Nov 27 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on underside eliminates DC isolators, reducing
common mode inductance
•Designed for broadband operation (HF to 800 MHz)
•Internal input damping for excellent stability over the
whole frequency range.
APPLICATIONS
•Communication transmitter applications in the
HF to 800 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source, connected to flange
Fig.1 Simplified outline.
5
12
43
Top view
MBK777
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF
OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB 600 28 120 >14.5 >55 −
2-tone,
class-AB f1= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±15 V
IDdrain current (DC) −18 A
Ptot total power dissipation Tmb ≤25 °C−290 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 27 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj=25°C per section unless otherwise specified.
Note
1. Capacitance values of the die only.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base Tmb =25°C; Ptot = 290 W 0.6 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 1.4 mA 65 −−V
V
GSth gate-source threshold voltage VDS = 20 V; ID= 140 mA 4 −5.5 V
IDSS drain-source leakage current VGS = 0; VDS =28V −−1.2 µA
IDSX drain cut-off current VGS =V
GSth +9V; V
DS =10V 18 −−A
I
GSS gate leakage current VGS =±15 V; VDS =0 −−25 nA
gfs forward transconductance VDS = 20 V; ID=4A −4−S
R
DSon drain-source on-state resistance VGS =V
GSth +9V; I
D=4A −160 −mΩ
Ciss input capacitance VGS =0;V
DS = 28 V; f = 1 MHz;
note 1 −80 −pF
Coss output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −43 −pF
Crss feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −6−pF
handbook, halfpage
Coss
(pF)
03010 40 50
VDS (V)
20
100
60
80
20
0
40
MGW546
Fig.2 Output capacitance as a function of
drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz; Tj=25°C.
2001 Nov 27 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth mb-h = 0.2 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 28 V; f = 100 MHz at rated load power.
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances (per section)
At f = 600 MHz, PL= 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 Ω and ZL= 2.7 + j0.7 Ω.
At f = 800 MHz, PL= 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 Ω and ZL= 1.8 + j0.7 Ω.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB 600 28 120 >14.5 >55 −
2-tone, class-AB f1= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26
CW, class-AB 800 32 150 typ. 12.5 typ. 60 −
2-tone, class-AB f1= 800; f2= 800.1 32 150 (PEP) typ. 13 typ. 45 typ. −30
2001 Nov 27 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
Application at 600 MHz
handbook, halfpage
Gp
(dB) ηD
(%)
ηD
0 10050 150 200
PL (PEP) (W)
20
15
5
0
10
80
60
20
0
40
MGW540
Gp
Fig.3 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
Th=25°C; VDS = 28 V; IDQ =1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
handbook, halfpage
dim
(dBc)
d5
d3
0 10050 150 200
PL (PEP) (W)
0
−20
−60
−80
−40
MGW541
Fig.4 Intermodulation distortion as a function of
peak envelope output power; typical values.
Th=25°C; VDS = 28 V; IDQ =1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
handbook, halfpage
Gp
(dB) ηD
(%)
ηD
0 10050 150 200
PL (W)
20
15
5
0
10
80
60
20
0
40
MGW542
Gp
Fig.5 Powergainanddrainefficiencyasfunctions
of load power; typical values.
Th=25°C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz;
measured in 600 MHz test circuit.
2001 Nov 27 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
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handbook, full pagewidth
MGW539
+Vbias
+VD
C9 C8
C18
C20
C17 50 Ω
output
C19
C7
L16
C12
C11
C6
C5
C3 C10 C14
C13
L14 R4
C16
C15
L15
R3
R2
R1
8
3
L6
L4
L3
L5
L8
L7
L10 L12
L13
L11
B2
L9
TR1
50 Ω
input
C1 L1
B1
C2 L2
Fig.6 Class-AB common source 600 MHz test circuit.
Dimensions in mm.
2001 Nov 27 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
List of components class-AB 600 MHz test circuit (see Figs 6 and 7)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr= 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
No.
C1, C2 multilayer ceramic chip capacitor; note 1 30 pF
C3 multilayer ceramic chip capacitor; note 1 8.2 pF
C5 multilayer ceramic chip capacitor; note 1 16 pF
C6 Tekelec trimmer 0.6 to 7.5 pF
C7, C8 multilayer ceramic chip capacitor; note 1 100 pF
C9 electrolytic capacitor 10 µF
C10 multilayer ceramic chip capacitor; note 2 2 pF
C11, C12 multilayer ceramic chip capacitor; note 2 10 pF
C13 multilayer ceramic chip capacitor; note 2 8.2 pF
C14 multilayer ceramic chip capacitor; note 2 1.5 pF
C15, C16, C17 multilayer ceramic chip capacitor; note 2 100 pF
C18 SMD capacitor 1 µF 2222 595 16754
C19 electrolytic capacitor 470 µF
C20 electrolytic capacitor 100 µF
L1, L2 semi rigid coax UT70-25 Z = 25 Ω±1.5 Ω30.6 mm
L3, L4 stripline; note 3 15 ×10 mm
L5, L6 stripline; note 3 5.5 ×15 mm
L7, L8 stripline; note 3 10 ×10 mm
L9, L10 stripline; note 3 15 ×5mm
L11, L12 stripline; note 3 48.5 ×2.4 mm
L13 stripline; note 3 10 ×2.4 mm
L14 ferrite
L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH
B1 semi rigid coax (lambda/2) Z = 50 Ω±1.5 Ωlambda/2
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω48.5 mm
R1 resistor 1 kΩ
R2, R3 resistor 100 Ω
R4 resistor 3,3 Ω
2001 Nov 27 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
handbook, full pagewidth
MGW547
3
8
B2
B1
L2
L1
C9
R1
C2
+Vbias
C5
C1 C3
C6
C7
C8
R2
R3
L16
L15
C18
C19
C16
C14
C13
C12
C11
C10
+VD
R4
L14
C20
C15 C17
BLF647
95
80
95
Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit.
Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
2001 Nov 27 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
Application at 800 MHz
handbook, halfpage
Gp
(dB) ηD
(%)
20
15
5
0
10
80
60
20
0
40
MGW543
0 100 200 300
PL (PEP) (W)
ηD
Gp
Fig.8 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
Th=25°C; VDS = 32 V; IDQ =1A.
2-tone: f1= 800 MHz (−6 dB); f2= 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.
handbook, halfpage
dim
(dBc) d3
d5
0 100 200 300
PL (PEP) (W)
0
−20
−60
−80
−40
MGW544
Fig.9 Intermodulation distortion as a function of
peak envelope output power; typical values.
Th=25°C; VDS = 32 V; IDQ =1A.
2-tone: f1= 800 MHz (−6 dB); f2= 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.
handbook, halfpage
Gp
(dB) ηD
(%)
0 10050 150 200
PL (W)
20
15
5
0
10
80
60
20
0
40
MGW545
ηD
Gp
Fig.10 Powergainanddrainefficiencyasfunctions
of load power; typical values.
Th=25°C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz;
measured in 800 MHz test circuit.
2001 Nov 27 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
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o
k, full pagewidth
MGW538
+Vbias
+VD
C9 C8
C18
C20
C17 50 Ω
output
C19
C7
L16
C14
C11
C6
C5 C10
C13
C12
L14 R4
C16
C15
L15
R3
R2
R1
8
3
3
L6
L4
L3
L5
L8
L7
L10 L12
L13
L11
B2
L9
TR1
50 Ω
input
C1 L1
B1
C2 L2
Fig.11 Class-AB common source 800 MHz test circuit.
Dimensions in mm.
2001 Nov 27 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
List of components class-AB 800 MHz test circuit (see Figs 11 and 12)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr= 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
No.
C1, C2 multilayer ceramic chip capacitor; note 1 30 pF
C5 multilayer ceramic chip capacitor; note 1 10 pF
C6 tekelec trimmer 0.6 to 7.5 pF
C7, C8 multilayer ceramic chip capacitor; note 1 100 pF
C9 electrolytic capacitor 10 µF
C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF
C12, C13 multilayer ceramic chip capacitor; note 2 10 pF
C14 multilayer ceramic chip capacitor; note 2 4.7 pF
C15, C16 multilayer ceramic chip capacitor; note 2 100 pF
C17 multilayer ceramic chip capacitor; note 2 20 pF
C18 SMD capacitor 1 µF 2222 595 16754
C19 electrolytic capacitor 470 µF
C20 electrolytic capacitor 100 µF
L1, L2 semi rigid coax UT70-25 Z = 25 Ω±1.5 Ω30.6 mm
L3, L4 stripline; note 3 15 ×10 mm
L5, L6 stripline; note 3 5.5 ×15 mm
L7, L8 stripline; note 3 10 ×10 mm
L9, L10 stripline; note 3 15 ×5mm
L11, L12 stripline; note 3 48.5 ×2.4 mm
L13 stripline; note 3 10 ×2.4 mm
L14 ferrite
L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH
B1 semi rigid coax (lambda/2) Z = 50 Ω±1.5 Ωlambda/2
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω48.5 mm
R1 resistor 1 kΩ
R2, R3 resistor 100 Ω
R4 resistor 3,3 Ω
2001 Nov 27 12
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
handbook, full pagewidth
MGW548
33
8
B2
B1
L2
L1
C9
R1
C2
+Vbias
C5
C1
C6
C7
C8
R2
R3
L16
L15
C18
C19
C16
C14
C13
C12
C11
C10
+VD
R4
L14
C20
C15 C17
BLF647
95
80
95
Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.
Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
2001 Nov 27 13
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT540A 99-08-27
99-12-28
0 5 10 mm
scale
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A
p
AF
b
e
D
U2
H
Q
c
5
12
43
D
1
E
A
w
1
AB
M M M
q
U
1
H
1
C
B
M M
w
2C
E
1
M
w
3
UNIT A
mm
Db
8.51
8.26 0.15
0.10 22.05
21.64 10.21 10.31
10.01 15.75
14.73 9.91
9.65
5.77
5.00
ce U2
0.250.25 0.51
w3
27.94
qw
2
w
1
F
1.78
1.52
U1
34.16
33.91
H1
18.72
18.47
p
3.38
3.12
Q
2.72
2.46
EE
1
10.26
10.06
inches 0.335
0.325 0.006
0.004 0.868
0.852
D1
22.05
21.64
0.868
0.852 0.402 0.406
0.394 0.620
0.580 0.390
0.380
0.227
0.197 0.0100.010 0.0201.100
0.070
0.060 1.345
1.335
0.737
0.727 0.133
0.123 0.107
0.097
0.404
0.396
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2001 Nov 27 14
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat anyotherconditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyofthese products,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesno representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 27 15
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/03/pp16 Date of release: 2001 Nov 27 Document order number: 9397 750 08838
