Preliminary Technical Information IXTC96N25T Trench Gate Power MOSFET VDSS ID25 = 250V = 40A 31m (Electrically Isolated Back Surface) RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSM Transient 30 V ID25 TC = 25C 40 A IDM TC = 25C, pulse width limited by TJM 230 A IAS TC = 25C 5 A EAS TC = 25C 2 J PD TC = 25C 147 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ G S Isolated back surface G = Gate S = Source D = Drain Features z z TL 1.6mm (0.062 in.) from case for 10s 300 C z TSOLD Plastic body for 10 seconds 260 C z VISOL 50/60Hz, t = 1 minute, IISOL < 1mA, RMS 2500 V FC Mounting force 11..65 / 2.5..14.6 N/lb. 2 g Weight D Silicon chip on Direct-Copper-Bond substrate Isolated mounting surface 2500V electrical isolation Low drain to tab capacitance (< 30pF) Advantages z z z Easy assembly Space savings High power density Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 250 VGS(th) VDS = VGS, ID = 1mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 48A, Note 1 z V 3 TJ = 125C (c) 2007 IXYS CORPORATION, All rights reserved z 27 5 V 200 nA 5 250 A A z z z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applications 31 m DS99915(10/07) IXTC96N25T Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 50 VDS= 10V, ID = 48A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 48A RG = 2.5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 48A Qgd ISOPLUS220 (IXTC) Outline 82 S 6100 pF 625 pF 75 pF 20 ns 22 ns 59 ns 28 ns 114 nC 33 nC 34 nC 1.Gate 2. Drain 3.Source Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1, 2 and 3. 0.85 C/W RthJC RthCS 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 96 A Repetitive, pulse width limited by TJM 300 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 48A, -di/dt = 250A/s VR = 100V, VGS = 0V 158 ns 23 A 1.8 C Notes: 1. Pulse test: t 300s; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTC96N25T Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 100 200 VGS = 10V 8V 7V 90 80 160 70 7V 140 ID - Amperes ID - Amperes VGS = 10V 8V 180 60 6V 50 40 120 100 80 30 60 20 40 10 6V 20 5V 5V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 3.2 2 4 6 8 10 12 14 16 18 20 22 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = 48A Value vs. Junction Temperature 100 24 3.2 VGS = 10V 8V 7V 90 VGS = 10V 2.8 RDS(on) - Normalized 80 ID - Amperes 70 6V 60 50 40 30 2.4 I D = 96A 2.0 I D = 48A 1.6 1.2 5V 20 0.8 10 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 48A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 45 3.4 VGS = 10V 3.0 40 TJ = 125C 30 ID - Amperes RDS(on) - Normalized 35 2.6 2.2 1.8 25 20 15 1.4 10 TJ = 25C 1.0 5 0 0.6 0 20 40 60 80 100 120 ID - Amperes (c) 2007 IXYS CORPORATION, All rights reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTC96N25T Fig. 7. Input Admittance Fig. 8. Transconductance 130 140 TJ = - 40C 120 120 110 100 g f s - Siemens ID - Amperes 100 TJ = 125C 25C - 40C 80 60 90 25C 80 70 60 125C 50 40 40 30 20 20 10 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 200 10 180 9 160 8 140 7 VDS = 125V I D = 25A VGS - Volts IS - Amperes 80 ID - Amperes 120 100 80 TJ = 125C I G = 10mA 6 5 4 3 60 TJ = 25C 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 10 20 VSD - Volts 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 10,000 1,000 Z(th)JC - C / W Capacitance - PicoFarads Ciss Coss 0.10 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTC96N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 24 24 RG = 2.5 22 22 VGS = 15V TJ = 25C 20 I 18 I 16 D D t r - Nanoseconds t r - Nanoseconds VDS = 125V = 96A = 48A 20 RG = 2.5 18 16 14 14 12 12 10 VGS = 15V VDS = 125V TJ = 125C 10 25 35 45 55 65 75 85 95 105 115 125 45 50 55 60 65 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 26 I D = 48A, 96A TJ = 125C, VGS = 15V 90 95 100 72 23 16 22 14 21 td(off) - - - - tf 30 RG = 2.5, VGS = 15V 70 68 VDS = 125V 28 66 26 64 I D = 48A 24 62 22 60 20 58 I D = 96A 18 56 16 54 t d ( o f f ) - Nanoseconds 18 t d ( o n ) - Nanoseconds 24 12 20 10 19 2 3 4 5 6 7 8 9 14 10 25 35 RG - Ohms RG = 2.5, VGS = 15V TJ = 125C 60 22 58 20 TJ = 25C 56 18 TJ = 125C 54 16 50 55 60 65 70 75 95 105 115 52 125 80 85 ID - Amperes (c) 2007 IXYS CORPORATION, All rights reserved 90 95 52 100 140 TJ = 125C, VGS = 15V VDS = 125V 50 120 40 100 I D = 48A, 96A 30 80 20 60 10 t d ( o f f ) - Nanoseconds 62 45 85 td(off) - - - - tf 60 64 26 24 75 160 66 t d ( o f f ) - Nanoseconds VDS = 125V 28 65 70 68 td(off) - - - - tf TJ = 25C 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 32 30 45 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 85 32 25 VDS = 125V 20 80 34 t f - Nanoseconds 22 t r - Nanoseconds td(on) - - - - 75 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 24 tr 70 ID - Amperes 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_96N25T(7W)10-11-07-A