© 2007 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 250 V
VGS(th) VDS = VGS, ID = 1mA 3 5 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 48A, Note 1 27 31 mΩ
Trench Gate
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
IXTC96N25T VDSS = 250V
ID25 = 40A
RDS(on) ≤≤
≤≤
≤ 31mΩΩ
ΩΩ
Ω
DS99915(10/07)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 250 V
VGSM Transient ± 30 V
ID25 TC= 25°C 40 A
IDM TC= 25°C, pulse width limited by TJM 230 A
IAS TC= 25°C5A
EAS TC= 25°C2J
PDTC= 25°C 147 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
VISOL 50/60Hz, t = 1 minute, IISOL < 1mA, RMS 2500 V
FCMounting force 11..65 / 2.5..14.6 N/lb.
Weight 2g
ISOPLUS220 (IXTC)
E153432
Features
zSilicon chip on Direct-Copper-Bond
substrate
zIsolated mounting surface
z2500V electrical isolation
zLow drain to tab capacitance (< 30pF)
Advantages
zEasy assembly
zSpace savings
zHigh power density
G = Gate D = Drain
S = Source
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
zUninterruptible power supplies
zHigh speed power switching
applications
Preliminary Technical Information
GDS
Isolated back surface
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC96N25T
Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 48A, Note 1 50 82 S
Ciss 6100 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 625 pF
Crss 75 pF
td(on) 20 ns
tr 22 ns
td(off) 59 ns
tf 28 ns
Qg(on) 114 nC
Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 48A 33 nC
Qgd 34 nC
RthJC 0.85 °C/W
RthCS 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 96 A
ISM Repetitive, pulse width limited by TJM 300 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 158 ns
IRM 23 A
QRM 1.8 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IF = 48A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1, 2 and 3.
1.Gate 2. Drain
3.Source
ISOPLUS220 (IXTC) Outline
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 48A
RG = 2.5Ω (External)
© 2007 IXYS CORPORATION, All rights reserved
IXTC96N25T
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
VDS - Volts
ID - A mp e re s
V
GS
= 10V
8V
7V
6V
5V
Fi g . 2. Exten d ed Ou tp u t C h aracter i stics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 1012141618202224
VDS - Vol ts
ID - A mp e res
V
GS
= 10V
8V
5V
7V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
100
012345678
VDS - V olt s
ID - A mp e res
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 48A Value
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
RDS(on) - No rm a lized
V
GS
= 10V
I
D
= 96A
I
D
= 48A
Fig. 5. R
DS(on)
Normalized to I
D
= 48A Value
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 20 40 60 80 100 120 140 160 180 200
ID - Am peres
RDS(on) - N o rma lize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperatu r e
0
5
10
15
20
25
30
35
40
45
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe re s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC96N25T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
3.43.84.24.6 5 5.45.86.26.6
V
GS
- Volts
I
D
- A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forw ar d Volt ag e D r o p of
Intrinsic Dio de
0
20
40
60
80
100
120
140
160
180
200
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Vo lts
I
S
- A mpere s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Char ge
0
1
2
3
4
5
6
7
8
9
10
0102030405060708090100110120
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Tr an si ent Ther mal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
© 2007 IXYS CORPORATION, All rights reserved IXYS REF: T_96N25T(7W)10-11-07-A
IXTC96N25T
Fi g . 14. Resistive Tu r n-on
Ri se Ti me vs. Dr ai n C u r r en t
10
12
14
16
18
20
22
24
45 50 55 60 65 70 75 80 85 90 95 100
I
D
- Amp e re s
t
r
- N an o se co n d s
R
G
= 2.5Ω
V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 15. Resistive Tu r n-on
Switchi ng Ti mes vs. Gate R esistan ce
10
12
14
16
18
20
22
24
2345678910
R
G
- Oh ms
t
r
- N an o se co n d s
19
20
21
22
23
24
25
26
t
d ( o n )
- Na no se con ds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 48A, 96A
Fi g . 16. Re si sti ve Tu r n -o ff
Switchi n g Times vs. Ju n cti o n Temper atu r e
14
16
18
20
22
24
26
28
30
32
34
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nan oseco nds
52
54
56
58
60
62
64
66
68
70
72
t d ( o f f )
- Nan osecon ds
t
f
t
d(off)
- - - -
R
G
= 2.5Ω, V
GS
= 15V
V
DS
= 125V
I
D
= 48A
I
D
= 96A
Fi g. 17 . R esistive Tu rn-o ff
Switching T imes vs. Drain Current
16
18
20
22
24
26
28
30
32
45 50 55 60 65 70 75 80 85 90 95 100
I
D
- Amperes
t
f
- Nan oseco nds
52
54
56
58
60
62
64
66
68
t
d ( o f f )
- Na no se con ds
t
f
t
d(off)
- - - -
R
G
= 2.5Ω, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fi g. 13 . R esistiv e Tur n -o n
Ri se Ti me vs. Ju n ctio n Temp er atu r e
10
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- N an o se co n d s
R
G
= 2.5Ω
V
GS
= 15V
V
DS
= 125V
I
D
= 96A
I
D
= 48A
Fi g . 18. R esisti ve Tu r n-off
Switch ing Times vs. Gate Resistan ce
10
20
30
40
50
60
70
2345678910
R
G
- Oh ms
t
f
- Na nose cond s
40
60
80
100
120
140
160
t
d ( o f f )
- Na nose cond s
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 48A, 96A
