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FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar
®
Wide-Body SOP 5-Pin
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1
September 2014
FOD8383
2.5 A Output Current, High-Speed, MOSFET/IGBT Gate
Drive Optocoupler in Optoplanar
®
Wide-Body SOP 5-Pin
Features
■
Reliable and High-Voltage Insulation with Greater
than 10 mm Creepage and Clearance Distance and
0.5 mm Internal Insulation Distance
■
2.5 A Output Current Driving Capability for Medium-
Power IGBT/MOSFET
– P-Channel MOSFET at Output Stage Enables
Output Voltage Swing Close to Supply Rail
■
35 kV/µs Minimum Common Mode Rejection
■
Wide Supply Voltage Range: 15 V to 30 V
■
Fast Switching Speed Over Full Operating
Temperature Range
– 210 ns Maximum Propagation Delay
– 65 ns Maximum Pulse-Width Distortion
■
Under-Voltage Lockout (UVLO) with Hysteresis
■
Extended Industrial Temperate Range: -40°C to 100°C
■
Safety and Regulatory Approvals:
– UL1577, 5,000 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 1,414 V Peak Working
Insulation Voltage
Applications
■
AC and Brushless DC Motor Drives
■
Industrial Inverter
■
Uninterruptible Power Supply
■
Induction Heating
■
Isolated IGBT/Power MOSFET Gate Drive
Related Resources
■
FOD3184—3 A Output Current, High-Speed
MOSFET/IGBT Gate Drive Optocoupler Datasheet
■
www.fairchildsemi.com/products/opto/
Description
The FOD8383 is a 2.5 A output current gate drive
optocoupler capable of driving medium-power IGBT/
MOSFETs. It is ideally suited for fast-switching driving of
power IGBT and MOSFET used in motor-control inverter
applications and high-performance power systems.
The FOD8383 utilizes Fairchild’s Optoplanar
®
coplanar
packaging technology and optimized IC design to
achieve reliable high-insulation voltage and high-noise
immunity.
It consists of an Aluminum Gallium Arsenide (AlGaAs)
Light-Emitting Diode (LED) optically coupled to an
integrated circuit with a high-speed driver for push-pull
MOSFET output stage. The device is housed in a wide
body, 5-pin, small-outline, plastic package.
Functional Schematic
Figure 1. Schematic
Figure 2. Package Outline
1
3
6
5
4
ANODE
CATHODE VSS
VO
VDD
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 2
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar
®
Wide-Body SOP 5-Pin
Truth Table
Pin Configuration
Figure 3. Pin Configuration
Pin Definitions
LED V
DD
– V
SS
“Positive Going”
(Turn-on)
V
DD–
V
SS
“Positive Going”
(Turn-off) V
O
Off 0 V to 30 V 0 V to 30 V LOW
On 0 V to 11.5 V 0 V to 10 V LOW
On 11.5 V to 14.5 V 10 V to 13 V Transition
On 14.5 V to 30 V 13 V to 30 V HIGH
Pin # Name Description
1 Anode
LED Anode
3 Cathode
LED Cathode
4V
SS
Negative Supply Voltage
5V
O
Output Voltage
6V
DD
Positive Supply Voltage
1
3
6
5
4
ANODE
CATHODE VSS
VO
VDD
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 3
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar
®
Wide-Body SOP 5-Pin
Safety and Insulation Ratings
As per DIN EN/IEC60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 V
RMS
I–IV
For Rated Mains Voltage < 300 V
RMS
I–IV
For Rated Mains Voltage < 450 V
RMS
I–IIII
For Rated Mains Voltage < 600 V
RMS
I–III
Climatic Classification 40/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input-to-Output Test Voltage, Method b, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 2651 V
peak
Input-to-Output Test Voltage, Method a, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 2262 V
peak
V
IORM
Maximum Working Insulation Voltage 1414 V
peak
V
IOTM
Highest Allowable Over Voltage 8000 V
peak
External Creepage 10.0 mm
External Clearance 10.0 mm
Insulation Thickness 0.5 mm
Safety Limit Values – Maximum Values Allowed in the
Event of a Failure
T
S
Case Temperature 150 °C
I
S,INPUT
Input Current 200 mA
P
S,OUTPUT
Output Power 600 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V 10
9
Ω
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 4
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar
®
Wide-Body SOP 5-Pin
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25ºC unless otherwise specified.
Notes:
1. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%.
2.
No derating required across operating temperature range.
3.
Derate linearly from 25°C at a rate of 5.2 mW/°C
.
4.
Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected
to conditions outside these ratings.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Parameter Value Units
T
STG
Storage Temperature
-40 to +125 °C
T
OPR
Operating Temperature
-40 to +100 °C
T
J
Junction Temperature
-40 to +125 °C
T
SOL
Lead Solder Temperature
Refer to Reflow Temperature Profile on page 15.
260 for 10 s °C
I
F(AVG)
Average Input Current
25 mA
V
R
Reverse Input Voltage
5.0 V
I
O(PEAK)
Peak Output Current
(1)
3.0 A
V
DD
– V
SS
Supply Voltage
-0.5 to 35 V
V
O(PEAK)
Peak Output Voltage
0 to V
DD
V
PD
I
Input Power Dissipation
(2)(4)
45 mW
PD
O
Output Power Dissipation
(3)(4)
500 mW
Symbol Parameter Min. Max. Unit
T
A
Ambient Operating Temperature
-40 100 °C
V
DD
– V
SS
Supply Voltage
15 30 V
I
F(ON)
Input Current (ON)
10 16 mA
V
F(OFF)
Input Voltage (OFF)
0 0.8 V
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 5
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar
®
Wide-Body SOP 5-Pin
Isolation Characteristics
Apply over all recommended conditions; typical value is measured at T
A
= 25ºC.
Notes:
5. Device is considered a two-terminal device: pins 1 and 3 are shorted together and pins 4, 5 and 6 are shorted
together.
6. 5,000 VAC
RMS
for 1 minute duration is equivalent to 6,000 VAC
RMS
for 1 second duration.
Electrical Characteristics
Apply over all recommended conditions, typical value is measured at V
DD
= 30 V, V
SS
= Ground, T
A
= 25°C unless
otherwise specified.
Notes:
7. In this test, V
OH
is measured with a dc load current of 100 mA. When driving capacitive load V
OH
will approach V
DD
as I
OH
approaches 0 A.
8. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
Symbol Parameter Conditions Min. Typ. Max. Units
V
ISO
Input-Output Isolation
Voltage
T
A
= 25ºC, R.H. < 50%, t = 60 s,
I
I-O
≤ 20 µA, 50 Hz(5)(6) 5,000 VRMS
RISO Isolation Resistance VI-O = 500 V(5) 1011 Ω
CISO Isolation Capacitance VI-O = 0 V, Frequency = 1.0 MHz(6) 1pF
Symbol Parameter Conditions Min. Typ. Max. Units Figure
VFInput Forward Voltage
IF = 10 mA
1.10 1.43 1.80 V 19
Δ(VF / TA)Temperature Coefficient
of Forward Voltage -1.5 mV/°C
BVR
Input Reverse
Breakdown Voltage IR = 10 µA 5 V
CIN Input Capacitance f = 1 MHz, VF = 0 V 60 pF
IOH
High Level Output
Current(1)
VOH = VDD – 1 V -0.9 -0.5 A 4, 6
VOH = VDD – 6 V -2.5 A 4, 6, 22
IOL
Low Level Output
Current(1)
VOL = VSS + 1 V 0.5 1.0 A 7, 9
VOL = VSS+ 6 V 2.5 A 7, 9, 21
VOH
High Level Output
Voltage(7)(8)
IF = 10 mA, IO = -2.5 A VDD – 7.0 V 4
IF = 10 mA, IO = -100 mA VDD – 0.5 V 4, 5, 23
VOL
Low Level Output
Voltage(7)(8)
IF = 0 mA, IO = 2.5 A VSS + 7.0 V 7
IF = 0 mA, IO = 100 mA VSS + 0.5 V 8, 24
IDDH
High Level Supply
Current
VO = Open,
IF = 7 to 16 mA 2.9 3.5 mA 10, 11,
25
IDDL
Low Level Supply
Current
VO = Open,
VF = 0 to 0.8 V 2.8 3.5 mA 10, 11,
26
IFLH
Threshold Input Current
Low-to-High IO = 0 mA, VO > 5 V 3.1 7.5 mA 12, 18,
27
VFHL
Threshold Input Voltage
High-to-Low IO = 0 mA, VO < 5 V 0.8 V 28
VUVLO+ Under-Voltage Lockout
Threshold
IF = 10 mA, VO > 5 V 11.5 13.0 14.5 V 20, 29
VUVLO- IF = 10 mA, VO < 5 V 10.0 11.5 13.0 V 20, 29
UVLOHYS
Under-Voltage Lockout
Threshold Hysteresis 1.5 V
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 6
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Switching Characteristics
Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C unless
otherwise specified.
Notes:
9. Propagation delay tPHL is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal.
10. Propagation delay tPLH is measured from the 50% level on the rising edge of the input pulse to the 50% level of the
rising edge of the VO signal.
11. PWD is defined as | tPHL – tPLH | for any given device.
12. The difference between tPHL and tPLH between any two FOD8383 parts under the same operating conditions, with
equal loads.
13. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of
the common mode impulse signal, VCM, to ensure that the output remains high (i.e., VO > 15.0 V).
14. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of
the common pulse signal, VCM, to ensure that the output remains low (i.e., VO < 1.0 V).
Symbol Parameter Conditions Min. Typ. Max. Units Figure
tPHL
Propagation Delay Time to Logic
LOW Output(9)
IF = 7 mA to 16 mA,
Rg = 10 Ω, Cg =10 nF,
f = 250 kHz,
Duty Cycle = 50%
50 145 210 ns
13, 14,
15, 16,
17, 30
tPLH
Propagation Delay Time to Logic
HIGH Output(10) 50 135 210 ns
13, 14,
15, 16,
17, 30
PWD Pulse Width Distortion(11)
| tPHL – tPLH |25 65 ns
PDD
(Skew)
Propagation Delay Difference
Between Any Two Parts(12) -90 90
tR
Output Rise Time
(10% to 90%) 35 ns 30
tF
Output Fall Time
(90% to 10%) 25 ns 30
tULVO ON ULVO Turn-On Delay IF = 10 mA, VO > 5 V 1.7 µs
tULVO OFF ULVO Turn-Off Delay IF = 10 mA, VO < 5 V 0.1 µs
| CMH |Common Mode Transient
Immunity at Output HIGH
TA = 25°C, VDD = 30 V,
IF = 10 to 16 mA,
VCM = 1500 V(13) 35 50 kV/µs 31
| CML |Common Mode Transient
Immunity at Output LOW
TA = 25°C, VDD = 30 V,
VF = 0 V, VCM = 1500 V(14) 35 50 kV/µs 31
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 7
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Typical Performance Characteristics
IOH – OUTPUT HIGH CURRENT (A)
Figure 6. Output High Current
vs. Ambient Temperature
8
7
6
5
4
3
2
1
0
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
VO = VDD – 6 V
VO = VDD – 1 V
VOL – OUTPUT LOW VOLTAGE (V)
0.25
0.20
0.15
0.10
0.05
0
Figure 8. Output Low Voltage
vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
VOH – VDD – OUTPUT HIGH VOLTAGE DROP (V)
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
Figure 4. Output High Voltage Drop
vs. Output High Current
0 0.5 1.0 1.5 2.0 2.5
IOH – OUTPUT HIGH CURRENT (A)
VDD = 15 V to 30 V
VSS = 0 V
IF = 10 mA to 16 mA
f = 200 Hz 0.2% Duty Cycle
TA = -40°C
25°C
100°C
VOL – OUTPUT LOW VOLTAGE (V)
4
3
2
1
0
Figure 7. Output Low Voltage
vs. Output Low Current
0 0.5 1.0 1.5 2.0 2.5
IOL – OUTPUT LOW CURRENT (A)
100°C
25°C
TA = -40°C
VOH–VDD – OUTPUT HIGH VOLTAGE DROP (V)
Figure 5. Output High Voltage Drop
vs. Ambient Temperature
0
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
VDD = 15 V to 30 V
VSS = 0 V
IF = 10 mA to 16 mA
IO = -100mA
VDD = 15 V to 30 V
VSS = 0 V
IF = 10 mA to 16mA
f = 200Hz 0.2% Duty Cycle
VDD = 15 V to 30 V
VSS = 0 V
VF = 0 V or 0.8 V
IO = 100 mA
VDD = 15 V to 30 V
VSS = 0 V
IF = 0 mA
f = 200 Hz 99.8% Duty Cycle
IOL – OUTPUT LOW CURRENT (A)
8
6
4
2
0
Figure 9. Output Low Current
vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
5
3
1
7
VDD = 15 V to 30 V
VSS = 0 V
IF = 0 mA
f = 200 Hz 99.8% Duty Cycle
VO = VDD + 6 V
VO = VDD + 1 V
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 8
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Typical Performance Characteristics (Continued)
IDD – SUPPLY CURRENT (mA)
3.6
3.2
2.8
2.4
2.0
Figure 10. Supply Current
vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
VDD = 30 V
VSS = 0 V
IF = 10 mA (for IDDH)
IF = 0 mA (for IDDL)
IDDH
IDDL
IFLH – LOW TO HIGH INPUT CURRENT
THRESHOLD (mA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Figure 12. Low-to-High Input Current Threshold
vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
VDD = 15 V to 30 V
VSS = 0 V
Output = Open
IDD – SUPPLY CURRENT (mA)
3.6
3.2
2.8
2.4
2.0
Figure 11. Supply Current
vs. Supply Voltage
15 20 25 30
VDD – SUPPLY VOLTAGE (V)
IF = 10 mA (for IDDH)
IF = 0 mA (for IDDL)
VSS = 0 V
TA = 25°C
IDDH
IDDL
tP – PROPAGATION DELAY (ns)
400
300
200
100
0
Figure 13. Propagation Delay
vs. Supply Voltage
15 18 21 24 27 30
VDD – SUPPLY VOLTAGE (V)
IF = 10 mA
Rg = 10 Ω
Cg = 10 nF
TA = 25°C
tPHL
tPLH
Figure 15. Propagation Delay
vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
tP – PROPAGATION DELAY (ns)
400
300
200
100
0
400
300
200
100
0
tP – PROPAGATION DELAY (ns)
Figure 14. Propagation Delay
vs. LED Forward Current
6 8 10 12 14 16
IF – FORWARD LED CURRENT (mA)
tPHL tPHL
tPLH tPLH
VDD = 30 V
VSS = 0 V
f = 10 kHz 50% Duty Cycle
Rg = 10 Ω
Cg = 10 nF
TA = 25°C
VDD = 30 V
VSS = 0 V
IF = 10 mA
f = 10 kHz 50% Duty Cycle
f = 10 kHz 50% Duty Cycle
Rg = 10 Ω
Cg = 10 nF
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 9
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Typical Performance Characteristics (Continued)
VO – OUTPUT VOLTAGE (V)
14
12
10
8
6
4
2
0
Figure 20. Under-Voltage Lockout
0 5 10 15 20
VDD–VSS – SUPPLY VOLTAGE (V)
IF = 10 mA
TA = 25°C
tP – PROPAGATION DELAY (ns)
400
300
200
100
0
400
300
200
100
0
Figure 16. Propagation Delay
vs. Series Load Resistance
0 1020304050
Rg – SERIES LOAD RESISTANCE (Ω)
VDD = 30 V
VSS = 0 V
IF = 10 mA
f = 250 kHz 50% Duty Cycle
Cg = 10 nF
TA = 25°C
tPHL
tP – PROPAGATION DELAY (ns)
Figure 17. Propagation Delay
vs. Load Capacitance
0 20406080100
Cg – LOAD CAPACITANCE (nF)
tPLH
VDD = 30 V
VSS = 0 V
IF = 10 mA
f = 250 kHz 50% Duty Cycle
Rg = 10 Ω
TA = 25°C
tPHL
VO – OUTPUT VOLTAGE (V)
35
30
25
20
15
10
5
0
Figure 18. Transfer Characteristics
012345
IF – FORWARD LED CURRENT (mA)
VDD = 30 V
TA = 25°C
IF – FORWARD CURRENT (mA)
100
10
1
0.1
0.01
0.001
Figure 19. Input Forward Current
vs. Forward Voltage
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF – FORWARD VOLTAGE (V)
100°C25°C-40°C
VUVLO = 11.74 V VUVLO = 13.33 V
tPLH
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 10
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Test Circuit
Figure 21. IOL Test Circuit
Figure 22. IOH Test Circuit
+
+
Power Supply
VDD = 15 V to 30 V
Power Supply
V = 6 V
IOL
PW = 4.99 ms
Period = 5 ms
ROUT = 50 Ω
R2
100 Ω
Frequency = 200 Hz
Duty Cycle = 99.8%
VDD = 15 V to 30 V
VSS = 0 V
IF = 0 mA
C1
0.1 μF
Pulse-In
LED-IFmon
Pulse Generator
Test Conditions:
To Scope
VOL
R1
100 Ω
C2
47 μF
+
C3
0.1 μF
D1 C4
47 μF
+
1
3
6
5
4
PW = 10 μs
Period = 5 ms
ROUT = 50 Ω
R2
100 Ω
Frequency = 200 Hz
Duty Cycle = 0.2%
VDD = 15 V to 30 V
VSS = 0 V
IF = 10 mA to 16 mA
C1
0.1 μF
Pulse-In
LED-IFmon
Pulse Generator
Test Conditions:
Power Supply
VDD = 15 V to 30 V
+
+
–
Power Supply
V = 6 V
To Scope
VOH
R1
100 Ω
C2
47 μF
+
C3
0.1 μF
D1
Current
Probe
IOH
C4
47 μF
+
1
3
6
5
4
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 11
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Test Circuit (Continued)
Figure 23. VOH Test Circuit
Figure 24. VOL Test Circuit
Figure 25. IDDH Test Circuit
Figure 26. IDDL Test Circuit
IF = 10 mA to 16 mA VO
0.1 μF
100 mA
VDD = 15 V to 30 V
+
–
1
3
6
5
4
VO
0.1 μF100 mA
VDD = 15 V to 30 V
+
–
1
3
6
5
4
1
3
6
5
4
IF = 10 mA to 16 mA VO
0.1 μF
VDD = 30 V
+
–
1
3
6
5
4
VF = 0 V to 0.8 V VO
0.1 μFVDD = 30 V
+
–
+
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 12
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Test Circuit (Continued)
Figure 27. IFLH Test Circuit
Figure 28. VFHL Test Circuit
Figure 29. UVLO Test Circuit
1
3
6
5
4
VO > 5 V
0.1 μF
IF
VDD = 15 V to 30 V
+
–
1
3
6
5
4
VO
0.1 μF
VDD = 15 V to 30 V
+
–
+
–VF = 0 V to 0.8 V
1
3
6
5
4
VO = 5 V
0.1 μF
15 V or 30 V
VDD Ramp
+
–
IF = 10 mA
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 13
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Test Circuit (Continued)
Figure 30. tPHL, tPLH, tR, and tF Test Circuit and Waveforms
Figure 31. CMR Test Circuit and Waveforms
VO
Probe
f = 10 kHz
DC = 50%
IF
VOUT
tPLH
Cg = 10 nF
Rg = 10 Ω
50 Ω
0.1 μF
VDD = 15 V to 30 V
+
–
+
–
tRtF
90%
50%
10%
tPHL
1
3
6
5
4
A
B
VO
0.1 μF
VDD = 30 V
VCM = 1500 V
IF
+
–
5 V +
–
Δt
VCM
VO
Switch at A: IF = 10 mA
Switch at B: IF = 0 mA
VOH
VOVOL
0V
+ –
1
3
6
5
4
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 14
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Reflow Profile
Figure 32. Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60 s to 120 s
Ramp-up Rate (tL to tP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 s to 150 s
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 s
Ramp-Down Rate (TP to TL) 6°C/s maximum
Time 25°C to Peak Temperature 8 minutes maximum
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8383 Rev. 1.0.1 15
FOD8383 — 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar® Wide-Body SOP 5-Pin
Ordering Information
All packages are lead free per JEDEC: J-STD-020B standard.
Marking Information
Part Number Package Packing Method
FOD8383 Wide Body SOP 5-Pin Tube (100 units per tube)
FOD8383R2 Wide Body SOP 5-Pin Tape and Reel (1,000 units per reel)
FOD8383V Wide Body SOP 5-Pin, DIN EN/IEC60747-5-5 Option Tube (100 units per tube)
FOD8383R2V Wide Body SOP 5-Pin, DIN EN/ IEC60747-5-5 Option Tape and Reel (1,000 units per reel)
1
2
8
4
3
5
Definitions
1 Fairchild logo
2 Device number, e.g., ‘8383’ for FOD8383
3DIN EN/IEC60747-5-5 Option (only appears on
component ordered with this option)
4 Plant code, e.g., ‘D’
5 Last digit year code, e.g., ‘C’ for 2012
6 Two-digit work week ranging from ‘01’ to ‘53’
7 Lot traceability code
8 Package assembly code, W
8383
D X YY KK
V
67
W
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS O T HERWISE SPECIFIED
A) THIS PACKAGE DOES NOT
CONF ORM TO A NY STANDARD.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS
D) DRAWING CONFORMS TO ASME
Y14.5M-1994
E) DRAWING FILE NAME:
MKT-M05AREV3
SCALE: 3.2:1
9.20
1.27 3.95
PIN ONE
INDICATOR
A
1.35
1.15
0.25 0.74
0.44
13
64
11.38
A
B
C
0.20 CA-B
2X
13
64
4.60
0.10 C D
2X
2.54
5X 0.51
0.31
0.25 CA-B D
11.80
11.60
D
0.60
0.33 C
5 TIPS
2.65
2.45
2.95 MAX
0.30
0.10
0.10 CSEATING
PLANE
0.10 C
5X
GAUGE
PLANE
SEATING
PLANE
C
0.25
0.19
(R1.29)
(R0.54)
1.27
1.38
8°
0°
2.54
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