GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings VDSS TVJ = 25C to 150C 40 V 20 V 180 136 120 A A A 182 112 88 A A A TC = 25C TC = 90C TC = 110C IF25 IF90 IF110 TC = 25C (diode) TC = 90C (diode) TC = 110C (diode) Symbol Conditions e ID25 ID90 ID110 -o u VGS s Characteristic Values on chip level at VGS = 10 V VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 20 V; ID = 100 A Eon Eoff Erecoff RthJC RthJH 1) p VGS(th) IDSS td(on) tr td(off) tf min. TVJ = 25C TVJ = 125C h RDSon a (TVJ = 25C, unless otherwise specified) 1) max. 1.9 2.8 2.5 5.3 2.5 TVJ = 25C TVJ = 125C inductive load VGS = +10/0 V; VDS = 15 V ID = 135 A; RG = 39 ; TJ = 125C typ. mW mW 4.5 V 5 A A 0.2 A 50 110 33 30 nC nC nC 150 240 350 170 ns ns ns ns 0.12 0.51 0.003 mJ mJ mJ with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment t Symbol Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings K/W K/W VDS = ID*(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Recommended replacement: MTI150WX40GD 20110307b 1-7 GMM 3x180-004X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VSD (diode) IF = 100 A; VGS = 0 V 0.9 trr QRM IRM IF = 100 A; -diF/dt = 600 A/s VR = 15 V; TJ = 125C 38 0.31 14 1.2 V ns C A Component Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions 75 A -55...+175 -55...+125 C C 1000 V~ 50 - 250 N t Symbol min. typ. u Characteristic Values max. 0.9 CP 160 pF 25 g coupling capacity between shorted pins and back side metallization Weight VDS = ID*(RDS(on) + RPin to Chip) mW p h a s e 1) -o Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307b 2-7 p h a s e -o u t GMM 3x180-004X2 Leads SMD Ordering Standard Part Name & Packing Unit Marking GMM 3x180-004X2 - SMD Part Marking GMM 3x180-004X2 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Delivering Mode Base Qty. Ordering Code Blister 28 509042 20110307b 3-7 p h a s e -o u t GMM 3x180-004X2 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307b 4-7 GMM 3x180-004X2 400 1.2 IDSS = 0.25 mA VDSS VDS = 16 V 350 1.1 300 1.0 250 ID normalized 200 [A] 0.9 150 100 0.8 TJ = 125C 50 0.7 -25 0 25 50 75 100 125 0 150 TJ = 25C 0 1 2 3 ID 7 400 7V 300 6.5 V [A] ID e 5.5 V 7V 6.5 V 200 6V 5.5 V 100 5V s 5V 1 2 3 a 0 0 4 0 1 VDS [V] RDS(on) norm. p 5 VGS = 10 V ID = 135 A RDS(on) 1.5 1.0 3.5 RDS(on) m 5.5 V 6 V 6.5 V 0.5 1 50 75 100 125 0 150 TVJ [C] Fig. 5 Typ. drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 7V TVJ = 125C 2.5 RDS(on) norm. 2.0 VGS = 10 V 15 V 20 V 1.5 RDS(on) normalized 25 5V 3.0 2 0 4 4.0 4 3 0.0 -25 3 Fig. 4 Typical output characteristic h 2.0 2 VDS [V] Fig. 3 Typical output characteristic 2.5 9 TVJ = 125C [A] 6V 100 VGS = 20 V 15 V 10 V u TVJ = 25C 200 0 8 Fig. 2 Typical transfer characteristic -o 300 6 t Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ VGS = 20 V 15 V 10 V 5 VGS [V] TJ [C] 400 4 1.0 0.5 0 100 200 300 400 ID [A] Fig. 6 Typ. drain source on-state resistance RDS(on) versus ID 20110307b 5-7 GMM 3x180-004X2 12 200 ID = 135 A TVJ = 25C 10 180 160 140 8 VGS ID120 VDS = 15 V 6 100 [V] [A]80 VDS = 28 V 4 60 40 2 20 0 0 20 40 60 80 100 0 120 0 25 50 75 QG [nC] tr t 0.2 td(on) 0.5 500 0.4 VDS = 15 V VGS = +10/0 V 400 [ns] [mJ] 0.2 120 ID [A] 160 200 0 0.0 h p Eon, Eoff 0 TJ = 125C 400 0.8 300 0.6 [ns] 80 120 160 200 0 1000 VDS = 15 V VGS = +10/0 V ID td(off) = 135 A 800 TVJ = 125C t [ns] [mJ] 0.4 40 1.0 td(on) Erec(on) 0.6 200 100 tr ID = 135 A 300 Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 500 VDS = 15 V VGS = +10/0 V t ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 0.8 tf 0.1 a 80 s 10x Erec(off) 1.0 td(off) 0.3 RG = 39 TVJ = 125C 100 Eon 40 200 Eoff e [mJ] 600 -o 300 TVJ = 125C 0 200 u RG = 39 Erec(off) 0.0 175 t 0.6 400 VDS = 15 V VGS = +10/0 V 0.1 150 Fig. 8 Drain current ID vs. temperature TC 0.4 Eon, 125 TC [C] Fig. 7 Gate charge characteristics 0.3 100 200 Eoff [mJ] 600 Eoff 0.4 t [ns] 400 tf 0.2 100 Eon 0.0 0 20 0.2 200 Erec(on) x10 40 60 80 100 0 120 0.0 0 20 40 60 80 100 0 120 RG [] RG [] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307b 6-7 GMM 3x180-004X2 20 VR = 15 V TVJ = 125C 48 IF = 50 A 100 A 150 A 16 44 IRM 12 40 150 A [ns] [A] 100 A 36 4 50 A 32 200 300 400 500 600 700 0 200 800 300 400 500 600 700 800 -diF /dt [A/s] -diF /dt [A/s] Fig. 13 Typ. reverse recovery time trr of the body diodes versus di/dt Fig. 14 Typ. reverse recovery current IRM of the body diodes versus di/dt 0.6 400 u 350 0.5 IF = 50 A 100 A 150 A Qrr 300 250 -o 0.4 IS 0.3 200 [A] 0.2 e [C] 8 t trr 400 600 50 0 0.0 800 a 0.0 200 TJ = -25C 25C 125C 150C 100 s 0.1 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD [V] -diF /dt [A/s] Fig. 16 Typ. source current IS versus source drain voltage VSD (body diode) p h Fig. 15 Typ. reverse recovery charge Qrr of the body diodes versus di/dt 0.7 0.6 0.5 Zth 0.4 [K/W] 0.3 0.2 0.1 Fig. 17 Definition of switching times 0.0 0.001 0.01 0.1 1 10 t [s] IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307b 7-7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: GMM3x180-004X2-SMD GMM3x180-004X2-SMDSAM