© 2011 IXYS All rights reserved 1 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
VDSS = 40 V
ID25 = 180 A
RDSon typ. = 1.9 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 40 V
VGS ± 20 V
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
180
136
120
A
A
A
IF25
IF90
IF110
TC = 25°C (diode)
TC = 90°C (diode)
TC = 110°C (diode)
182
112
88
A
A
A
S2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L3+
L2L1
L1+ L2+
L3-L1- L2-
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon 1) on chip level at TVJ = 25°C
VGS = 10 V TVJ = 125°C
1.9
2.8
2.5
5.3
mW
mW
VGS(th) VDS = 20 V; ID = 1 mA 2.5 4.5 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C 50
5 µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 20 V; ID = 100 A
110
33
30
nC
nC
nC
td(on)
tr
td(off)
tf
inductive load
VGS = +10/0 V; VDS = 15 V
ID = 135 A; RG = 39 Ω;
TJ = 125°C
150
240
350
170
ns
ns
ns
ns
Eon
Eoff
Erecoff
0.12
0.51
0.003
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
1) VDS = ID·(RDS(on) + RPin to Chip)
Preliminary data
p h a s e - o u t
Recommended replacement: MTI150WX40GD
© 2011 IXYS All rights reserved 2 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
2 pins for output L1, L2, L3
75 A
TJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 0.9 mW
CPcoupling capacity between shorted
pins and back side metallization
160 pF
Weight 25 g
1) VDS = ID·(RDS(on) + RPin to Chip)
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 100 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 100 A; -diF/dt = 600 A/µs
VR = 15 V; TJ = 125°C
38
0.31
14
ns
µC
A
p h a s e - o u t
© 2011 IXYS All rights reserved 3 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
SMD Standard GMM 3x180-004X2 - SMD GMM 3x180-004X2 Blister 28 509042
p h a s e - o u t
© 2011 IXYS All rights reserved 4 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
p h a s e - o u t
© 2011 IXYS All rights reserved 5 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
VDS [V]
01234
ID
[A]
0
100
200
300
400
01234
0
100
200
300
400
TVJ [°C]
-25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
VGS [V]
0 1 2 3 4 5 6 7 8 9
ID
[A]
0
50
100
150
200
250
300
350
400
6 V
6.5 V
7 V
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
VDSS
normalized
TJ [°C]
5.5 V
5 V
6.5 V
6 V
5.5 V
5 V
RDS(on) normalized
0 100 200 300 400
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
7 V5 V 5.5 V 6 V 6.5 V
TJ = 25°C
VGS =
20 V
15 V
10 V
VDS [V]
ID
[A]
VGS =
20 V
15 V
10 V
TVJ = 25°C
7 V
ID [A]
RDS(on)
RDS(on)
norm.
RDS(on)
mΩ
RDS(on)
norm.
VGS = 10 V
15 V
20 V
TVJ = 125°C
IDSS = 0.25 mA VDS = 16 V
VGS = 10 V
ID = 135 A
TVJ = 125°C
TJ = 125°C
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TVJ
Fig. 2 Typical transfer characteristic
Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic
Fig. 6 Typ. drain source on-state resistance
RDS(on) versus ID
Fig. 5 Typ. drain source on-state resistance RDS(on)
versus junction temperature TJ
p h a s e - o u t
© 2011 IXYS All rights reserved 6 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
QG [nC]
0 20 40 60 80 100 120
ID
[A]
0
2
4
6
8
10
12
td(on)
tr
VGS
[V]
0 40 80 120 160 200
0.0
0.1
0.2
0.3
0.4
0
100
200
300
400
0 40 80 120 160 200
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
100
200
300
400
500
600
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
0
100
200
300
400
500
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
0
200
400
600
800
1000
TC [°C]
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
180
200
VDS = 15 V
Eon
Eon,
Erec(off)
[mJ]
ID [A] ID [A]
t
[ns]
Eoff
tf
td(off)
t
[ns]
t
[ns]
Eon Erec(on) x10
td(on)
tr
RG [Ω]
Eoff
[mJ] Eoff
td(off)
tf
Eoff
[mJ]
Eon,
Erec(on)
[mJ]
t
[ns]
VDS = 15 V
VGS = +10/0 V
ID = 135 A
TJ = 125°C
RG [Ω]
VDS = 28 V
ID = 135 A
TVJ = 25°C
VDS = 15 V
VGS = +10/0 V
RG = 39 Ω
TVJ = 125°C
10x Erec(off)
VDS = 15 V
VGS = +10/0 V
RG = 39 Ω
TVJ = 125°C
VDS = 15 V
VGS = +10/0 V
ID = 135 A
TVJ = 125°C
Fig. 7 Gate charge characteristics Fig. 8 Drain current ID vs. temperature TC
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
p h a s e - o u t
© 2011 IXYS All rights reserved 7 - 7
20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
200 300 400 500 600 700 800
0
4
8
12
16
20
-diF /dt [A/µs]
200 300 400 500 600 700 800
trr
[ns]
32
36
40
44
48
VSD [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IS
[A]
0
50
100
150
200
250
300
350
400
200 400 600 800
Qrr
[µC]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
TJ = -25°C
25°C
125°C
150°C
t [s]
0.001 0.01 0.1 1 10
Zth
[K/W]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-diF /dt [A/µs]
IRM
[A]
VR = 15 V
TVJ = 125°C
50 A
150 A
100 A
IF = 50 A
100 A
150 A
-diF /dt [A/µs]
IF = 50 A
100 A
150 A
Fig. 13 Typ. reverse recovery time trr
of the body diodes versus di/dt
Fig. 14 Typ. reverse recovery current IRM
of the body diodes versus di/dt
Fig. 15 Typ. reverse recovery charge Qrr
of the body diodes versus di/dt
Fig. 16 Typ. source current IS versus
source drain voltage VSD (body diode)
Fig. 17 Definition of switching times
p h a s e - o u t
