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FDD390N15ALZ N-Channel PowerTrench(R) MOSFET 150 V, 26 A, 42 m Features Description * RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A * Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. * Low Gate Charge, QG = 17.6 nC (Typ.) Applications * High Performance Trench Technology for Extremely Low RDS(on) * Consumer Applicances * High Power and Current Handling Capability * LED TV * RoHS Compliant * Synchronous Rectification * RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A * Uninterruptible Power Supplies * Micro Solar Inverter D D G S G D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) 20 V A 17 (Note 1) 104 A (Note 2) 96 mJ (Note 3) 13 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL Unit V 26 - Continuous (TC = 100oC) - Pulsed FDD390N15ALZ 150 - Derate Above 25oC 63 W 0.5 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD390N15ALZ RJC Thermal Resistance, Junction to Case, Max. 2.0 RJA Thermal Resistance, Junction to Ambient, Max. 87 (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 1 Unit oC/W www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET January 2014 Part Number FDD390N15ALZ Top Mark FDD390N15ALZ Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.15 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, Referenced to 25oC VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 125oC - - 500 VGS = 20 V, VDS = 0 V - - 10 VGS = VDS, ID = 250 A A A On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.4 - 2.8 V VGS = 10 V, ID = 26 A - 33.4 42 m VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 26 A - 42.2 64 m - 50 - S - 1323 1760 pF - 93 120 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 4 6 Coss(er) Energy Related Output Capacitance VDS = 75 V, VGS = 0 V - 165 - pF Qg(tot) Total Gate Charge at 10V VGS = 10 V - 17.6 39 nC Qg(tot) Total Gate Charge at 5V VGS = 4.5 V - 8.1 10.5 nC Qgs Gate to Source Gate Charge - 4.7 - nC - 2.3 - nC - 1.48 - - 12.8 35.6 ns - 9.3 28.6 ns - 26.9 63.8 ns - 3.2 16.4 ns Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance (G-S) VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, ID = 26 A (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75 V, ID = 26 A, VGS = 10 V, RG = 4. 7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 26 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.25 V trr Reverse Recovery Time 70 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 26 A, dIF/dt = 100 A/s - 169 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 6.75 A, starting TJ = 25C. 3. ISD 26 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 2 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 100 *Notes: 1. VDS = 10V 2. 250s Pulse Test ID, Drain Current[A] ID, Drain Current[A] VGS = 10.0V 5.5V 5.0V 4.5V 100 4.0V 3.5V 3.0V 10 1 o 150 C 10 o 25 C o -55 C *Notes: 1. 250s Pulse Test 0.1 0.05 0.1 o 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1 2 3 4 5 VGS, Gate-Source Voltage[V] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 200 IS, Reverse Drain Current [A] RDS(ON) [m], Drain-Source On-Resistance 100 80 60 VGS = 4.5V 40 VGS = 10V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 20 *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 80 1 0.2 100 Figure 5. Capacitance Characteristics 10 1000 Ciss VGS, Gate-Source Voltage [V] Capacitances [pF] 1.4 Figure 6. Gate Charge Characteristics 2000 100 Coss 10 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2 0.1 1 10 VDS, Drain-Source Voltage [V] (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 Crss 6 4 2 0 100 200 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 26A 0 4 8 12 16 Qg, Total Gate Charge [nC] 20 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.6 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.8 0.4 -80 160 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 26A -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 200 100 30 100s 10 1 Operation in This Area is Limited by R DS(on) SINGLE PULSE o 0.1 TC = 25 C o TJ = 150 C ID, Drain Current [A] ID, Drain Current [A] 25 1ms 10ms 100ms DC 20 VGS = 10V 15 VGS = 4.5V 10 5 o 0.01 o RJC = 2.0 C/W 1 10 100 VDS, Drain-Source Voltage [V] RJC = 2.0 C/W 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage 15 10 IAS, AVALANCHE CURRENT (A) 1.0 EOSS, [J] 150 Figure 12. Unclamped Inductive Switching Capability 1.2 0.8 0.6 0.4 0.2 0.0 50 75 100 125 o TC, Case Temperature [ C] 0 30 60 90 120 VDS, Drain to Source Voltage [V] (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 TJ = 25 oC TJ = 125 oC 1 0.01 150 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) ZJC(t), Thermal Response [oC/W] Thermal Response [ZJC] Figure 13. Transient Thermal Response Curve 3 1 0.5 0.2 0.1 0.1 t1 0.02 0.01 Single pulse 0.01 -5 10 (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 PDM 0.05 *Notes: t2 o 1. ZJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration[sec] [sec] 5 -1 10 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 6 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 7 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET Mechanical Dimensions Figure 18. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 9 www.fairchildsemi.com FDD390N15ALZ -- N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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