7-1327
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CD40106BMS
CMOS Hex Schmitt Triggers
Features
• High Voltage Type (20V Rating)
• Schmitt Trigger Action with No External Components
• Hysteresis Voltage (Typ.)
- 0.9V at VDD = 5V
- 2.3V at VDD = 10V
- 3.5V at VDD = 15V
• Noise Immunity Greater than 50%
• No Limit on Input Rise and Fall Times
• Low VDD to VSS Current During Slow Input Ramp
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Standardized Symmetrical Output Characteristics
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Applications
• Wave and Pulse Shapers
• High Noise Environment Systems
• Monostable Multivibrators
• Astable Multivibrators
Description
CD40106BMS consists of six Schmitt trigger circuits. Each
circuit functions as an inverter with Schmitt trigger action on
the input. The trigger switches at different points for positive
and negative going signals. The difference between the
positive going voltage (VP) and the negative going voltage
(VN) is defined as hysteresis voltage (VH) (see Figure 17).
The CD40106BMS is supplied in these 14 lead outline
packages:
Braze Seal DIP H4Q
Frit Seal DIP H1B
Ceramic Flatpack H3W
December 1992
File Number 3354
Pinout
CD40106BMS
TOP VIEW
Functional Diagram
Logic Diagram
FIGURE 1. 1 OF 6 SCHMITT TRIGGERS
A
G = A
B
H = B
C
I = C
VSS
VDD
F
L = F
E
K = E
D
J = D
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1
A2G = A
3
B4H = B
5
C6I = C
9
D8J = D
11
E10 K = E
13
F12 L = F
A*
1 (3, 5, 9, 11, 13) G
*
2 (4, 6, 8, 10, 12)
*ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
VDD
VSS
7-1328
Specifications CD40106BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . θja θjc
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA
2 +125oC - 200 µA
VDD = 18V, VIN = VDD or GND 3 -55oC-2µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Positive Trigger
Threshold Voltage
(See Figure 17)
VP5 VDD = 5V 1, 2, 3 +25oC, +125oC, -55oC 2.2 3.6 V
VP10 VDD = 10V 1, 2, 3 +25oC, +125oC, -55oC 4.6 7.1 V
VP15 VDD = 15V 1, 2, 3 +25oC, +125oC, -55oC 6.8 10.8 V
Negative Trigger
Threshold Voltage
(See Figure 17)
VN5 VDD = 5V 1, 2, 3 +25oC, +125oC, -55oC 0.9 2.8 V
VN10 VDD = 10V 1, 2, 3 +25oC, +125oC, -55oC 2.5 5.2 V
VN15 VDD = 15V 1, 2, 3 +25oC, +125oC, -55oC 4 7.4 V
Hysteresis Voltage
(See Figure 17) VH5 VDD = 5V 1, 2, 3 +25oC, +125oC, -55oC 0.3 1.6 V
VH10 VDD = 10V 1, 2, 3 +25oC, +125oC, -55oC 1.2 3.4 V
VH15 VDD = 15V 1, 2, 3 +25oC, +125oC, -55oC 1.6 5.0 V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-1329
Specifications CD40106BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Propagation Delay TPHL
TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 280 ns
10, 11 +125oC, -55oC - 378 ns
Transition Time TTHL
TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
10, 11 +125oC, -55oC - 270 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA
+125oC-30µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA
+125oC-60µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA
+125oC - 120 µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC-50mV
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC-50mV
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC4.95 - V
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC9.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
-55oC 4.2 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
-55oC - -0.64 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
-55oC - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
-55oC - -1.6 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
-55oC - -4.2 mA
Propagation Delay TPHL
TPLH VDD = 10V 1, 2, 3 +25oC - 140 ns
VDD = 15V 1, 2, 3 +25oC - 120 ns
Transition Time TTHL
TTLH VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns
7-1330
Specifications CD40106BMS
Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K., Input TR, TF < 20ns
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 7.5 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage
Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage
Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER SYMBOL DELTA LIMIT
Supply Current - MSI-1 IDD ± 0.2µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
7-1331
Specifications CD40106BMS
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
Static Burn-In 1
Note 1 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13 14
Static Burn-In 2
Note 1 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11,
13, 14
Dynamic Burn-
In Note 1 - 7 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13
Irradiation
Note 2 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11,
13, 14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
Typical Performance Characteristics
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
10V
5V
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = 15V
0 5 10 15
15
10
5
20
25
30
DRAIN-TO-SOURCE VOLT AGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
10V
5V
AMBIENT TEMPERATURE (T A) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = 15V
0 5 10 15
7.5
5.0
2.5
10.0
12.5
15.0
DRAIN-TO-SOURCE VOLT AGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
7-1332
Specifications CD40106BMS
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 6. TYPICAL CURRENT AND VOLTAGE TRANSFER
CHARACTERISTICS FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERIS-
TICS AS A FUNCTION OF TEMPERATURE
FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNC-
TION OF LOAD CAPACITANCE FIGURE 9. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE
Typical Performance Characteristics (Continued)
-10V
-15V
AMBIENT TEMPERATURE (T A) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = -5V
0
-5
-10
-15
DRAIN-TO-SOURCE VOLT AGE (VDS) (V)
-20
-25
-30
0-5-10-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-15V
AMBIENT TEMPERATURE (T A) = +25oC0
-5
-10
-15
DRAIN-TO-SOURCE VOLT AGE (VDS) (V) 0-5-10-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-TO-SOURCE VOLT AGE (VGS) = -5V
ALL
OTHER
INPUTS TO
VDD OR VSS
VDD
VIN
VO ID
2
1VO
ID
10V
5V
AMBIENT TEMPERATURE (T A) = +25oC
SUPPLY VOL TAGE (VDD) = 15V
CURRENT
PEAK
CURRENT
PEAK
15.012.510.07.55.02.50
15.0
12.5
10.0
7.5
5.0
2.5
0
1.5
1.0
0.5
0
INPUT VOLTAGE (VI) (V)
OUTPUT VOLT AGE (VO) (V)
DRAIN CURRENT (ID) (mA)
-55oC
+125oC
SUPPLY VOL TAGE (VDD) = 15V
10V
5V
15
10
5
0
OUTPUT VOLTAGE (VO) (V)
151050 INPUT VOLTAGE (VI) (V)
ALL
OTHER
INPUTS TO
VDD OR VSS
VDD
VIN 2
1VO
AMBIENT TEMPERATURE (T A) = +25oC
LOAD CAPACITANCE (CL) (pF)
0 40 60 80 10020
0
50
100
150
200
SUPPLY VOL TAGE (VDD) = 5V
10V
5V
PROPAGATION TIME (tPHL, tPLH) (ns)
AMBIENT TEMPERATURE (T A) = +25oC
LOAD CAPACITANCE (CL) (pF)
0 40 60 80 10020
0
50
100
150
200
SUPPLY VOL TAGE (VDD) = 5V
10V
15V
TRANSITION TIME (tTHL, tTLH) (ns)
7-1333
CD40106BMS
FIGURE 10. TYPICAL POWER DISSIPATION PER TRIGGER AS
A FUNCTION OF INPUT FREQUENCY FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE AS A
FUNCTION OF SUPPLY VOLTAGE
FIGURE 12. TYPICAL PERCENT HYSTERESIS AS A FUNCTION
OF SUPPLY VOLTAGE FIGURE 13. TYPICAL POWER DISSIPATION AS A FUNCTION
OF RISE AND FALL TIMES
Applications
FIGURE 14. WAVE SHAPER FIGURE 15. MONOSTABLE MULTIVIBRATOR
Typical Performance Characteristics (Continued)
INPUT FREQUENCY (f) (kHz)
POWER DISSIPATION PER TRIGGER (PD) (µW)
8
6
4
2
105
8
6
4
2
104
8
6
4
2
103
8
6
4
2
102
10
10-1 8642 18642 10 102103104
864286428642
AMBIENT TEMPERATURE (T A) = +25oC
SUPPLY VOL TAGE (VDD) = 15V
10V
5V
CL = 50pF
CL = 15pF
AMBIENT TEMPERATURE (T A) = +25oC
SUPPLY VOLTAGE (VDD) (V)
01015205
0
5
10
15
VP
VN
TRIGGER THRESHOLD VOLTAGE (VP, VN) (V)
INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13;
OTHER INPUTS TIED TO VDD
AMBIENT TEMPERATURE (T A) = +25oC
SUPPLY VOLTAGE (VDD) (V)
01015205
0
15
20
25
10
5
HYSTERESIS VH X 100 PERCENT
VDD
(
(
8
6
4
2
104
8
6
4
2
103
8
6
4
2
102
8
6
4
2
10
8
6
4
2
1
10-1
RISE AND FALL TIME (tr, tf) (ns)
0.1 8642 18642 10 102103104
864286428642
POWER DISSIPATION (PD) (µW)
SUPPLY VOL TAGE (VDD) = 15pF
FREQUENCY (f) = 100kHz
AMBIENT TEMPERATURE (T A) = +25oC
LOAD CAPACITANCE (CL) = 15pF
15V, 10kHz
15V, 1kHz
10V, 1kHz
5V, 1kHz
VDD
VSS
FREQUENCY RANGE OF WAVE SHAPE
IS FROM DC TO 1MHz
VDD
VSS
1/6 CD40106BMS
VDD
VSS
1/3 CD4007UB R
C
VSS
VDD
tM = RC n
50kΩ≤ R ≤ 1MΩ
100pF ≤ C ≤ 1µF
VDD
VDD-VP
FOR THE RANGE OF R AND C
GIVEN 5µs < tM < 1s
VDD
VSS
tM
1/6 CD40106BMS
21
7-1334
CD40106BMS
FIGURE 16. ASTABLE MULTIVIBRATOR
FIGURE 17. HYSTERESIS DEFINITION, CHARACTERISTICS, AND TEST SETUP
FIGURE 18. INPUT AND OUTPUT CHARACTERISTICS
Applications (Continued)
VDD
VSS
R
C
VSS
tA = RC n
50kΩ≤ R ≤ 1MΩ
100pF ≤ C ≤ 1µF
VP
VN
FOR THE RANGE OF R AND C
GIVEN 2µs < tA < 0.4s
tA
VDD-VN
VDD-VP
1/6 CD40106BMS
VDD
VIN
VSS
VDD
VO
VSS
VP VN
VH
VH
VN VP
VO
VIN
VH = VP - VN
(a) DEFINITION OF VP, VN, VH (b) TRANSFER CHARACTERISTIC OF 1 OF 6 GATES
VIN VO
LOGIC “1”
OUTPUT
REGION
LOGIC “0”
OUTPUT
REGION
LOGIC “1”
INPUT
REGION
LOGIC “0”
INPUT
REGION
VDD
VSS
VOL
VN
VP
VOH
OUTPUT
CHARACTERISTIC INPUT
CHARACTERISTIC
DRIVER LOAD
VOL
VOH
1335
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FAX: (886) 2 2715 3029
CD40106BMS
Chip Dimensions and Pad Layout
Dimensions in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch).
METALLIZATION: Thickness: 11kÅ−14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
