© 2009 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 300 V
VDGR TJ= 25C to 150C, RGS = 1M300 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 160 A
IDM TC= 25C, Pulse Width Limited by TJM 440 A
IATC= 25C80A
EAS TC= 25C5J
dV/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C 1390 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 300 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS= 0V 50 A
TJ = 125C 3 mA
RDS(on) VGS = 10V, ID = 80A, Note 1 19 m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK160N30T
IXFX160N30T
VDSS = 300V
ID25 = 160A
RDS(on)
19m
trr
200ns
DS100127A(9/14)
GigaMOSTM
Power MOSFET
Features
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Preliminary Technical Information
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK160N30T
IXFX160N30T
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 160 A
ISM Repetitive, Pulse Width Limited by TJM 640 A
VSD IF = 60A, VGS = 0V, Note 1 1.4 V
trr 200 ns
QRM 1.09 C
IRM 13 A
IF = 80A, -di/dt = 100A/s
VR = 75V, VGS = 0V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 90 150 S
Ciss 24.5 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1825 pF
Crss 45 pF
RGi Gate Input Resistance 1.1 
td(on) 34 ns
tr 68 ns
td(off) 90 ns
tf 23 ns
Qg(on) 376 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 140 nC
Qgd 56 nC
RthJC 0.09C/W
RthCS 0.15C/W
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
© 2009 IXYS CORPORATION, All rights reserved
IXFK160N30T
IXFX160N30T
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
0.00.40.81.21.62.02.42.83.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
5V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
02468101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
140
160
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
4V
Fig. 4. R
DS(on)
Normalized to I
D
= 80A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 160A
I
D
= 80A
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value vs.
Dra in Cu r rent
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 40 80 120 160 200 240 280
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK160N30T
IXFX160N30T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 80A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
RDS(
on
) Limit
© 2009 IXYS CORPORATION, All rights reserved
IXFK160N30T
IXFX160N30T
Fig. 14. Resistive Turn-on Rise Time vs.
Dra in Current
30
40
50
60
70
80
90
80 90 100 110 120 130 140 150 160
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1, V
GS
= 15V
V
DS
= 150V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
20
60
100
140
180
220
260
300
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
120
140
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 150V
I
D
= 160A
I
D
= 80A
Fig. 16. Resistiv e Turn-off Switching Times vs.
Junction Temperature
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
70
80
90
100
110
120
130
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 15V
V
DS
= 150V
I
D
= 80A
I
D
= 160A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1, V
GS
= 15V
V
DS
= 150V
I
D
= 160A
I
D
= 80A
Fig. 17. Resistive Turn-off
Switching Times vs . Drain Current
16
18
20
22
24
26
28
80 90 100 110 120 130 140 150 160
I
D
- Amperes
t
f
- Nanoseconds
70
80
90
100
110
120
130
t
d ( o f f )
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 1, V
GS
= 15V
V
DS
= 150V
T
J
= 25ºC, 125ºC
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
80
160
240
320
400
480
560
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 150V
I
D
= 160A
I
D
= 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK160N30T
IXFX160N30T
IXYS REF: F_160N30T (9E-N32) 9-18-14-A
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.