HGT1S12N60B3DS - Fairchild Semiconductor

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS

27A, 600V, UFS Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices

combine the best features of MOSFETs and bipolar

tra nsi stors. These devices have the high input impedance of

a MOSFET and the lo w on-s tate conduc tion lo ss of a bi polar

tra nsi stor . The m uch lower on-state voltage drop varies onl y

moder ately bet ween 2 5oC and 150oC. The IGBT used is the

developm ent type TA49171. The di ode used in anti-parallel

with the IGBT is the developm ent type TA49188.

The IGBT is ideal for ma n y high voltage switching

applic ations operating at moderate freque nci es w he r e lo w

conduction los s es are essential, such as: AC and DC mot or

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly developmental type TA49173.

Symbol

Features

• 27A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC

• Short Circuit Rating

• Lo w Condu c tion Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

- TB334 “Guideli nes for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ( A LTERNATE VERSION)

JEDEC TO-263AB

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60B3D TO-220AB 12N60B3D

HGTG12N60B3D TO-247 12N60B3D

HGT1S12N60B3DS TO-263AB 12N60B3D

NO TE: When ordering, use the entire part number . Add the suffix 9A

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S12N60B3DS9A.

COLLECTOR

(FLANGE)

G COLLECTOR

(FLANGE)

COLLECTOR

(BOTTOM SIDE METAL)

Fairchild CORPORATION IGBT PR ODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. P AT ENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet December 2001

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 27 A

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 110 A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V

Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD104 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T STG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs

CAUTION: Str esses above those li sted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S

Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V

Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA

TC = 150oC--2.0mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,

VGE = 15V TC = 25oC-1.62.1V

TC = 150oC-1.72.5V

Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA, VCE = VGE 4.5 4.9 6.0 V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V

L = 100µH, VCE = 600V 96 - - A

Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -7.3- V

On-State Gate Charge Qg(ON) IC = IC110,

VCE = 0.5 BVCES VGE = 15V - 51 60 nC

VGE = 20V - 68 78 nC

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 25Ω

L = 1mH

Test Circuit (Figure 19)

-26- ns

Current Rise Time trI -23- ns

Current Turn-Off Delay Time td(OFF)I - 150 - ns

Current Fall Time tfI -62- ns

Turn-On Energy EON - 304 350 µJ

Turn-Off Energy (Note 3 ) EOFF - 250 350 µJ

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 25Ω

L = 1mH

Test Circuit (Figure 19)

-22- ns

Current Rise Time trI -23- ns

Current Turn-Off Delay Time td(OFF)I - 280 295 ns

Current Fall Time tfI - 112 175 ns

Turn-On Energy EON - 500 525 µJ

Turn-Off Energy (Note 3 ) EOFF - 660 800 µJ

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Diode Forward Voltage VEC IEC = 12A - 1.7 2.1 V

Diode Reverse Recovery T ime trr IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns

IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns

Thermal Resistance Junction To Case RθJC IGBT - - 1.2 oC/W

Diode - - 1.9 oC/W

NOTE:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn -Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. DC COLLE CT OR CURRENT vs CASE

TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S

TC, CASE TEMPERATURE (oC)

ICE, DC COLLECTOR CURRENT (A)

30 VGE = 15V

25 75 100 125 150

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

ICE, COLLECTOR TO EMITTER CURRENT (A)

300 400200100 500 600

100

TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH

TCVGE

110oC10V

15V

75oC

110oC

fMAX, OPERATING FREQUENCY (kHz)

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

3010 20

300

75oC10V

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

RθJC = 1.2oC/W, SEE NOTES

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 = (PD - PC) / (EON + EOFF)

TJ = 150oC, RG = 25Ω, L = 1mH, VCE = 480V

VGE, GATE TO EMITTER VOLTAGE (V)

ISC, PEAK SHORT CIRCUIT CURRENT (A)

tSC, SHORT CIRCUIT WITHSTAND TIME (µs)

10 11 12 13 14 15

100

tSC

ISC

VCE = 360V, RG = 25Ω, TJ = 125oC

14 90

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR TO

EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O

EMITTER CURRENT

FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO

EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O

EMITTER CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

024

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

6810

TC = -55oC

TC = 150oC

PULSE DURATION = 250µs

DUTY CYCLE < 0.5%, VGE = 10V

TC = 25oC

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

100

120

140

160

180

024

6810

DUTY CYCLE < 0.5%, VGE = 15V

PULSE DURATION = 250µs

TC = 150oC

TC = -55oC

TC = 25oC

EON, TURN-ON ENERGY LOSS (mJ)

2.5

1.5

ICE, COLLECTOR TO EMITTER CURRENT (A)

2.0

1.0

0.5

2010

RG = 25Ω, L = 1mH, VCE = 480V

TJ = 25oC, TJ = 150oC, VGE = 10V

TJ = 25oC, TJ = 150oC, VGE = 15V

3025155

3.0

ICE, COLLECTOR TO EMITTER CURRENT (A)

EOFF, TURN-OFF ENERGY LOSS (mJ)

0.5

251510 20 305

1.0

2.5 RG = 25Ω, L = 1mH, VCE = 480V

TJ = 150oC; VGE = 10V OR 15V

TJ = 25oC; VGE = 10V OR 15V

2.0

1.5

ICE, COLLECTOR TO EMITTER CURRENT (A)

tdI, TURN-ON DELAY TIME (ns)

20 1510 20 305

RG = 25Ω, L = 1mH, VCE = 480V

TJ = 25oC, TJ = 150oC, VGE = 10V

TJ = 25oC, TJ = 150oC, VGE = 15V

ICE, COL LECTOR TO EMITTER CURRENT (A)

trI, RISE TIME (ns)

125

100

305

150

252015

RG = 25Ω, L = 1mH, VCE = 480V

TJ = 25oC and TJ = 150oC, VGE = 15V

TJ = 25oC, TJ = 150oC, VGE = 10V

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O

EMITTER CURRENT FIGURE 12. F ALL TI ME vs COLLECT OR T O EMITT ER

CURRENT

FIGURE 13. TRANSFER CHARACTERIST IC FIGURE 14. GATE CHARGE WAVEFORM

FIGURE 15. CAPACITANCE vs COLLECTOR T O EMITT ER VOLTAGE

Typical Performance Curves Unless Otherwise Specified (Continued)

10 15 305

125

250

300

2520

100

200

150

175

225

275

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(OFF)I, TURN-OFF DELAY TIME (ns)

RG = 25Ω, L = 1mH, VCE = 480V

TJ = 150oC, VGE = 10V, VGE = 15V

TJ = 25oC, VGE = 10V, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

tfI, FALL TIME (n s)

10 15 305

100

120

140

2520

110

130

TJ = 150oC, VGE = 10V, VGE = 15V

RG = 25Ω, L = 1mH, VCE = 480V

TJ = 25oC, VGE = 10V OR 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

5 789106

VGE, GATE TO EMITTER VOLTAGE (V)

TC = 150oC

11 12 13 14 15

120

TC = -55oC

140

160

180

PULSE DURATION = 250µs

DUTY CYCLE < 0.5%, VCE = 10V

TC = 25oC

Qg, GATE CHARGE (nC)

010515 30

VGE, GATE TO EMITTER VOLTAGE (V)

Ig (REF) = 1mA, RL = 25Ω, TC = 25oC

VCE = 200V

VCE = 400V

VCE = 600V

35 40 45 5025

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0 5 10 15 20 25

C, CAPACITANCE (nF)

0.5

1.0

1.5

2.0

2.5

CIES

COES

CRES

FREQUENCY = 1MHz

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION T O CASE

FIGURE 17. DIODE FORWARD CURRENT vs FORWARD

VOLT AGE DROP FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

t1, RECTANGULAR PULSE DURATION (s)

10-5 10-3 100101

10-4 10-1

10-2

100

ZθJC, NORMALIZED THERMAL RESPONSE

10-1

10-2

DUTY FACTOR, D = t1 / t2

PEAK TJ = PD x ZθJC x RθJC + TC

SIN GL E P U LS E

0.5

0.2

0.1

0.05

0.02

0.01

0.5 1.0 1.5 2.5 3.0

IEC, FORWARD CURRENT (A)

VEC, FORWARD VOLTAGE (V)

02.0

25oC

100oC

150oC

tr, RECOVERY TIMES (ns)

IEC, FORWARD CURRENT (A)

510 20015

trr

TC = 25oC, dIEC/dt = 2 00A /µs

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate insu lation dama ge by the electro static discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler ’s body capacitance is not disc ha rged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production b y nume rous equipment m anuf acturers in

military, indus tria l and consumer appli cations, with virtually

no damage problem s due to electrostatic discharge. IGBTs

can be handled safely if the follo wing basic precautions are

taken:

1. Prior to assem b ly int o a circui t, all l eads s hould be k ept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

2. When de vice s are remov ed by hand from thei r carriers,

the hand being u sed shoul d be grou nded b y any suitab le

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. De vices sho uld n e v er b e ins erted into or remo v e d from

circuits with power on.

5. Gate V oltage Rating - Nev er e xce ed the gate-v olta ge

rat ing of VGEM. Exceeding the rated VGE can result in

permanent damage to the oxide la yer in the gate regio n.

6. Gate Terminatio n - The gates of these de vi ces are

essentially capacitors. Circuits that leave the gate open-

circuit ed or fl oating shoul d be a v oide d. Thes e condi tions

can resu lt in turn-on of the device d ue to voltage buildup

on the input capacitor due to leakage currents or pickup.

7. Gate Protection - The se de vices do no t hav e an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

Operating Frequency Information

Op erating frequen cy in formation f or a typ ic al device

(Figure 3) is presen ted as a guide for estimati ng device

performance for a specific application. Other typical

frequency vs collector current (ICE) plots are po ssib le using

the inf o rmation s hown f o r a typical un it in Figure s 5, 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows fMAX1 or fMAX2; whichever is smaller at each

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defin ed by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadti me (the de nominato r) has bee n arbit rarily held to 10%

of the on -sta te tim e for a 50% duty factor. Other definition s

are possible. td(OFF)I and td(ON)I are defined in Figure 20.

Device turn-off delay can establish a n addit io nal freque n cy

limitin g con diti on for an applic at ion other than TJM. td(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The

allowab le dissipation (PD) is defined by PD=(T

JM -T

C)/RθJC.

The sum o f de vice s witc hing and c onduction losses m ust not

excee d PD. A 50% duty factor was used (Figure 3) and the

conduction l osses (PC) are approximated by

PC=(V

CE xI

CE)/2.

EON and EOFF are defined in the switching waveforms

shown in Figure 20. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the

integral of the instantaneous power loss (ICE xV

CE) during

turn-off. All tail losses are included in the calculation for

EOFF; i.e., the collector current equals zero (ICE = 0).

Test Circuit and Wa vef o rm

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORM

RG = 25Ω

L = 1mH

VDD = 480V

HGTP12N60B3D

tfI

td(OFF)I trI

td(ON)I

10%

90%

10%

90%

VCE

ICE

VGE

EOFF

EON

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS