Pacific Silicon Sensor Series 8 Data Sheet Part Description AD1100-8-TO52-S1 Order # 06-025 ACTIVE AREA: 1.00 mm 2 (1.13 mm DIA) O 2.54 PIN CIRCLE PIN 1 CATHODE O0.46 3 PL 92 VIEWING ANGLE 2.70 FRONTSIDE VIEW PIN 4 CASE 1 12.7 3 PL 3.60 BACKSIDE VIEW DESCRIPTION APPLICATIONS * * * * 1.00 mm High Speed, High Gain Avalanche Photodiode with N on P construction. Hermetically packaged in a TO-52-S1 with a clear borosilicate glass window cap. * High speed optical communications * Laser range finder * Medical equipment * High speed photometry 2 TSTG TOP TSOLDERING IPH (DC) IPH (AC) Storage Temp Operating Temp Soldering Temp 10 seconds Electrical Power Dissipation @ 22C Optical Peak Value, once for 1 second Continuous Optical Operation Pulsed Signal Input 50 s "on" / 1 ms "off" UNITS +125 +100 C C +260 C - 100 mW - 200 mW - 250 A - 1 mA -55 -40 C SPECTRAL RESPONSE at M = 100 MAX 60 RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN S PLI A NT OM FEATURES 1.13 mm active area High gain at low bias voltage Fast rise time Low capacitance PIN 3 ANODE H O 3.00 O 4.70 Ro O 5.40 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS @ 22 C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID C VBR Dark Current M = 100* --4.0 8.0 nA Capacitance M = 100* --8.0 --pF Breakdown Voltage ID = 2 A 90 120-190 240 V Temperature Coefficient of VBR 0.35 0.45 0.55 V/K 45 --50 A/W Responsivity M = 100; = 0 V; = 800 nm Bandwidth -3dB --0.35 --GHz 3dB Rise Time --1000 --ps tr Optimum Gain 40 60 ------"Excess Noise" factor M = 100 2.2 ----"Excess Noise" index M = 100 0.2 1/2 ----Noise Current M = 100 0.15 pA/Hz --Max Gain 200 ---14 1/2 ----NEP Noise Equivalent Power 8.0 X 10 M = 100; = 800 nm W/Hz * Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 680 nm, 60 nm bandwidth LED. Increase the photo current up to 1 A, (M = 100) by internal multiplication due to an increasing bias voltage. Disclaimer: Due to our policy of continued development, specifications are subject to change without notice. 8/23/2010 Page 1 of 2 TYPICAL GAIN vs BIAS VOLTAGE QUANTUM EFFICIENCY for M = 1 1.00 10000 0.90 0.80 1000 0.70 QE GAIN 0.60 100 0.50 0.40 0.30 10 0.20 0.10 0.00 1 1 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 400 480 560 BIAS VOLTAGE (V) 640 720 800 880 960 1040 WAVELENGTH (nm) DEVICE SCHEMATIC SUGGESTED CIRCUIT SCHEMATIC BIAS SUPPLY VOLTAGE CURRENT LIMITING RESISTOR PIN 1 PIN 4 MIN. 0.1 F CAPACITOR CLOSEST TO APD APD PIN 3 DIODE, PROTECTIVE CIRCUIT READ-OUT CIRCUIT OR 50 Ohm LOAD RESISTANCE APPLICATION NOTES * Current should be limited by a protecting resistor or current limiting IC inside the power supply. * Use of low noise read-out IC. * For high gain applications (M>50) bias voltage should be temperature compensated. * For low light level applications, blocking of ambient light should be used. HANDLING PRECAUTIONS: * Soldering temperature - 260C for 10 seconds max. The device must be protected against solder flux vapor. * Minimum pin length - 2 mm * ESD protection - Standard precautionary measures are sufficient. * Storage - Store devices in conductive foam. * Avoid skin contact with window. * Clean window with Ethyl alcohol if necessary. * Do not scratch or abrade window. USA: International sales: Pacific Silicon Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA Phone (818) 706-3400 Fax (818) 889-7053 Email: sales@pacific-sensor.com www.pacific-sensor.com Silicon Sensor International AG Peter-Behrens-Str. 15 D-12459 Berlin, Germany Phone +49 (0)30-63 99 23 10 Fax +49 (0)30-63 99 23 33 Email: sales@silicon-sensor.de www.silicon-sensor.de Proud Members of the Silicon Sensor International AG Group of companies 8/23/2010 Page 2 of 2