ES2A thru ES2D
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Revision: 07-Feb-12 1Document Number: 89481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 50 V to 200 V
IFSM 50 A
trr 20 ns
VF0.90 V
TJ max. 150 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 50 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2A ES2B ES2C ES2D UNIT
Maximum instantaneous forward
voltage 2.0 A VF (1) 0.90 V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C IR
10 μA
TA = 100 °C 350
Max. reverse recovery time IF = 0.5 A, IR = 1.0 A,
lrr = 0.25 A trr 20 ns
ES2A thru ES2D
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 2Document Number: 89481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
Note
(1) Units mounted on P.C.B. 5.0 mm x 5.0 mm (0.013 mm thick) land areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Maximum reverse recovery time
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/μs,
Ir = 10 % IRM
TJ = 25 °C
trr
30
ns
TJ = 100 °C 50
Maximum stored charge
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/μs,
Ir = 10 % IRM
TJ = 25 °C
Qrr
10
nC
TJ = 100 °C 25
Typical junction capacitance 4.0 V, 1 MHz CJ18 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT
Typical thermal resistance RJA (1) 75 °C/W
RJL (1) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2D-M3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2D-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2A ES2B ES2C ES2D UNIT
0
3.0
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
10
20
30
40
50
60
1 10010
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
at TL = 110 °C
Number of Cycles at 60 Hz
ES2A thru ES2D
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 3Document Number: 89481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.2 0.4 0.6 0.81.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
1
10
100
1000
10 000
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080 100
0.1
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
20
10
30
40
50
60
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Cathode Band
DO-214AA (SMB)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 (5.59) REF.
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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