ES2A thru ES2D
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Revision: 07-Feb-12 1Document Number: 89481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast recovery times for high efficiency
Low forward voltage, low power losses
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 50 V to 200 V
IFSM 50 A
trr 20 ns
VF0.90 V
TJ max. 150 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 50 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2A ES2B ES2C ES2D UNIT
Maximum instantaneous forward
voltage 2.0 A VF (1) 0.90 V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C IR
10 μA
TA = 100 °C 350
Max. reverse recovery time IF = 0.5 A, IR = 1.0 A,
lrr = 0.25 A trr 20 ns
ES2A thru ES2D
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 2Document Number: 89481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
Note
(1) Units mounted on P.C.B. 5.0 mm x 5.0 mm (0.013 mm thick) land areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Maximum reverse recovery time
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/μs,
Ir = 10 % IRM
TJ = 25 °C
trr
30
ns
TJ = 100 °C 50
Maximum stored charge
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/μs,
Ir = 10 % IRM
TJ = 25 °C
Qrr
10
nC
TJ = 100 °C 25
Typical junction capacitance 4.0 V, 1 MHz CJ18 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT
Typical thermal resistance RJA (1) 75 °C/W
RJL (1) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2D-M3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2D-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2A ES2B ES2C ES2D UNIT
0
3.0
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
10
20
30
40
50
60
1 10010
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
at TL = 110 °C
Number of Cycles at 60 Hz
ES2A thru ES2D
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 3Document Number: 89481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.2 0.4 0.6 0.81.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
1
10
100
1000
10 000
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080 100
0.1
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
20
10
30
40
50
60
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Cathode Band
DO-214AA (SMB)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 (5.59) REF.
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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