2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev. A0 1
May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching S peed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Symbol Parameter Value Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
ID Maximum Drain Current - Continuous
TJ = 100°C
- Pulsed
310
195
1.2
mA
mA
A
TJ Operating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperatu re Range -55 to +150 °C
Symbol Parameter Value Units
PDTotal Device Dissipation
Derating above TA = 25°C 300
2.4 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient * 410 °C/W
Marking : 7KW
G
S
SOT-323
D
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev. A0 2
Electrical Characteristics TA = 25°C unless otherwise noted
Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic s
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID =10μA60 V
IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C1.0
0.5 μA
mA
IGSS Gate-Body Leakage VGS = ±20V, VDS = 0V ±10 μA
On Characteristics (Note1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA1.12.1V
RDS(ON) Static Drain-Source
On-Resistance VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA, TJ = 100°C
VGS = 5V, ID = 50mA
VGS = 5V, ID = 50mA, TJ = 100°C
1.6
2.4
2
3
Ω
Ω
Ω
Ω
VDS(ON) Drain-Source On-Voltage VGS = 10V, ID = 500mA
VGS = 5V, ID = 50mA 3.75
1.5 V
V
ID(ON) On-State Drain Current VGS = 10V, VDS = 2V 500 mA
gFS Forward T ransconductance VDS = 2V, ID = 0.2A 80 mS
Dynamic Characteristics
Ciss Input Capacit ance VDS = 25V, VGS= 0V, f = 1.0MHz 50 pF
Coss Output Capacitance 25 pF
Crss Reverse Transfer Capacitance 5 pF
Switching Characteristics
tD(ON) Turn-On Delay Time VDD = 30V, RL = 150Ω, VGS= 10V,
ID = 200mA, RGEN = 25Ω
20 ns
ns
tD(OFF) Turn-Off Delay Time 60
Drain-Source Diode Characterist ics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current 115 mA
ISM Maximum Pulsed Drain-Source Diode Forward Current 0.8 A
VSD Drain-Source Diode Forward
Voltage VGS = 0V, IS = 115mA 1.1 V
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev. A0 3
Typical Performance Characteristics
Figure 1. On-Region Chara cteristics. Figure 2. On-Resistance Variation with
Temperature.
Figure 3. On-Resistance Variation with
Gate Voltage and Drain Current. Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
7V
VGS = 3V
4V
5V
8V 9V
6V
VGS = 10V
ID. Drain-Source Current (A)
VDS. Drain-Source Voltage (V) -50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VGS = 5V
ID = 50mA
(Ω)
VGS = 10V
ID = 500mA
RDS(on)
Normalized Drain-Source On-Resistance
TJ. Junction Temperature (oC)
0.0 0.5 1.0 1.5 2.0
0.5
1.0
1.5
2.0
2.5
3.0
9V
(Ω)
8V
6V
VGS = 7V
10V
4.5V
5V
VGS = 4V
RDS(on),
Drain-Source On-Resistance
ID. Drain-Source Current(A) 0.0 0.5 1.0 1.5 2.0
0
1
2
3
4
5
TA = -55oC
TA = 25oC
TA = 125oC
(Ω)
VGS = 10V
RDS(on)
Drain-So ur ce On-Resistance
ID. Drain Current (A)
012345678910
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS. Gate-Source Voltage (V)
TA = 125(oC)
TA = 25(oC)
VDS = 10V TA = -55(oC)
ID. Drain-Source Current (A)
-25 0 25 50 75 100 125
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10 VDS = VGS
ID = 1mA
ID = 0.25mA
Vth.
Norm alized Gat e-Sourc e Thr eshold Voltage (V )
TJ. Junction Temperature (oC)
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev. A0 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
with Temperature Figure 8. Body Di ode Forward Voltage Variation
with Source Current and Temperature.
Figure 9. Capacitance Char acteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Maximum Safe Operating Area.
Figure 12. Transient Thermal Response Curve.
-25 0 25 50 75 100 125
0.925
0.950
0.975
1.000
1.025
1.050
1.075
1.100
ID=250uA
BVdss , Normalized
Drain Source Breakdown Voltage
TJ, Junction Temperatture(o C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
1000
10000
TA=-55oC
VGS = 0 V
TA=125oC
TA=25oC
IS. Reverse Drain Current [mA]
VSD. Body Diode Forward Voltage [V]
1 10 100
1
10
100
CRSS
COSS
f = 1 MH Z
VGS = 0V
CISS
CISS, COSS, CRSS. C a pacitance (pF)
VDS. Drain to Source Voltage (V) 0.00.20.40.60.81.0
0
2
4
6
8
10
ID = 115mA ID = 280mA
VDS = 25V
ID = 500m A
VGS. Gate-Source Voltage (V)
Q g . Gate Charge (n C)
10-1 100101102
10-4
10-3
10-2
10-1
100
1ms
10ms
DC1S
100ms
100μs
RDS(on) Limit
Vg s = 1 0 V
Single Pulse
Rthja=410oC/W
Ta = 25 oC
ID, Drain Curr en t [A ]
VDS, Drain-Source Voltage [V] 1E-4 1E-3 0.01 0.1 1 10 100 1000
0.01
0.1
1
50%
r(t), Normalized Transient Thermal Resistance
t1, time(sec)
Single Pulse
20%
10%
5%
2%
D=1%
Rthja(t)=r(t)*Rthja
Rthja=410oC/W
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev. A0 5
Physical Dimensions
SOT-323
2.00±0.20
0.95±0.15 0.90
±0.10
3°
3°
0.135
1.25±0.10 2.10±0.10
0.10 Min
0.275±0.100
1.30±0.10
+0.04
–0.01
1.00±0.10
0.05+0.05
–0.02
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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