MMBT5401 MMBT5401 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage PNP PNP Version 2007-11-09 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBT5401 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 150 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 160 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) - IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA MMBT5400 hFE hFE hFE 30 40 40 - - - - 180 - - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA MMBT5401 hFE hFE hFE 50 60 50 - - - - 240 - - - - - 0.2 V 0.5 V - - - - 1.0 V 1.0 V Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA 1 2 - VBEsat - VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT5401 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 120 V, (E open) MMBT5401 - ICBO - - 50 nA - VCB = 120 V, Tj = 100C, (E open) MMBT5401 - ICBO - - 50 A - IEBO - -- 50 nA fT 100 MHz - 300 MHz CCBO - - 6 pF F - - 8 dB Emitter-Base-cutoff current - Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz - IC = 10 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RS = 10 , f = 1 kHz MMBT5401 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 420 K/W 1) RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren MMBT5551 Marking - Stempelung MMBT5401 = 2Lx 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG