MMBT5401
MMBT5401
PNP Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP
Version 2007-11-09
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MMBT5401
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 150 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 160 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) - IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 50 mA
MMBT5400
hFE
hFE
hFE
30
40
40
–
–
–
–
180
–
- VCE = 5 V, - IC = 1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 50 mA
MMBT5401
hFE
hFE
hFE
50
60
50
–
–
–
–
240
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
–
–
–
–
0.2 V
0.5 V
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
–
–
–
–
1.0 V
1.0 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
12
3
Type
Code
1.9
MMBT5401
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 120 V, (E open) MMBT5401 - ICBO – – 50 nA
- VCB = 120 V, Tj = 100°C, (E open) MMBT5401 - ICBO – – 50 µA
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- VEB = 4 V, (C open) - IEBO – –- 50 nA
Gain-Bandwidth Product – Transitfrequenz
- IC = 10 mA, - VCE = 10 V, f = 100 MHz fT100 MHz – 300 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 6 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA,
RS = 10 Ω, f = 1 kHz
MMBT5401 F – – 8 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren MMBT5551
Marking - Stempelung MMBT5401 = 2Lx
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
