Cw zB . Fe ig| > 6 3 o ja 2 8 Db Oo BE 1g wo = = s rs S uw > Zz _ Ee O wl ? _ or LO a _ OC) OD Ono <{| oc =| 4 fu ~| A] ao O} = 3) & | =< a| LL| Z N Llu a 3 LU 3 2 & Oo SS @ o : = n 3 3 a 8 3 u a A = = lJ Ke " a 219 Siu s|a als H04-004-07 pq7"09 31N3a/ IMhy JO JUasUOI LAN SSosdxS BUN, mou sasodind Guuniseynuew ayy soy pasn Jou Ayed pay Aue jo asn ay) JO) sanaosieym Aem Aue ul paso[asip Jo WwWal paidos paonpqidas sayyau aq eus Kays pido au19813 Hn4 Jo Aysadod ayy $1 ulasay uorewso}ul ay) pue jewalew siyl1.Scope This specifies Fuji Power MOSFET 2SK2895-01 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220 Outview See to 5/13 page 5.Absolute Maximum Ratings at Tc=25'C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage Vos 60 Vv Continuous Drain Current lp #45 A Pulsed Drain Current lbp +180 A Gate-Source Voltage Vas +20 V Maximum Avalanche Energy = |Eav 461.9 mt |*4 Maximum Power Dissipation Pp 60 Ww Operating and Storage Teh 150 c Temperature range Tstg -55 to +150 Cc *1 L=0.304mH,Vec=24V 6.Electrical Characteristics at Tc=25C (unless otherwise specitied) Static Ratings Fuji Electric Co.,Ltd, They shall be neither reproduced, copied, lant, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without This material and the information herein is the property of the express written consent of Fuji Electric Co.,Ltd. Description Symbol Conditions min. typ. max. Unit Drain-Source lb=1mA BVoss Breakdown Voltage Vas=0V 60 V Gate Threshold Ib=1mMA Vas(th) Voltage Vos=Ves 1.0 1.5 2.0 Vv Zero Gate Voltage Vos=60V [Ten=25C 10 500 uA pss Drain Current Ves=0V [Tn =125C 0.2 1.0 mA Gate-Source | Ves=t20V Gas Leakage Current Vos=0V 10 100 nA Drain-Source VGS=4V 15 20 Ros(on) |ID=22.5A mQ On-State Resistance VGS=10V 10 12 Fuji Electric Co.,Ltd. DWG.NO. 2/13 H04-004-03Dynamic Ratings Description Symbol Conditions min. typ. max. Unit Forward Ip=22.5A Transconductance as Vps=25V 15.0 35.0 s Input Capacitance |Ciss Vps=25V 2900 4350 Output Capacitance |Coss Vasg=0V 930 1400 Reverse Transfer f=1MHz pF Crss Capacitance 260 390 td{on) Voc=30V 13 30 Turn-On Time tr Vas=10V 35 50 td(off) |Ip=45A 190 290 ns Turn-Off Time tf Ras=100 | 75 140 . Reverse Diode lent, or disclosed in any way whatsoever for the use of any third party mor used for the manufacturing purposes without Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, the express written consent of Fuji Electric Co.,Ltd. This material and the information herein is the property of Description Symbol Conditions min. typ. max. Unit Avalanche Capability hy L=100 nH Tch=25'C See Fig.1 and Fig.2 45 A Diode Forward lF=45A On-Voltage Vso Ves=0V - Ten=25C 0.95 1.43 V Reverse Recovery tr b=45A Time Vas=0V 55 ns Reverse Recovery -di/dt=100A/ us Charge on Ten=25'C 0.10 uc 7.Thermal Resistance Description symbol min. typ. max. Unit Channel to Case Rth(ch-c) 2.08 | CW Channel to Ambient |Ath(ch-a) 75.0 CAV Fuji Electric Co.,Ltd. DWG.NO. 3/13 H04004-03Fig.1 Test circuit Vcc Ves Wile 1/10 * Vos 100uUH 1 shot pulse Starting Tch=25C Vcc L [5 ber UT VF >| . Fig.2 Operating waveforms 10V IL Witt BVpss Vps ip IAV 4/13 ON'OMG Fuji Electric Co.,Ltd. pTT"99 21299919 Ifhy Jo WasuOd UAT IAM ssaucha ay] Inoyya sasodind Guinjseynuew dy) sey pasn sou Ayied pay Aue jo aSn au) uty Jaagosjeym Aem Aue ul pSsojSsip uc wa paidoo paonposdas Jayyau a eys Aeyy 'Pd7'OD 3129989 Why jo Ayadoid ayy $s! ulasay UoNewsoyu) 34) pue jeratew si) H04-004-03 10 _ 4.50.2 g _, |.13#0.2 ha Reto | Ny n Td See Note: 1. 9 FON t L Trademark Ne Orn ] rar-A aes Lot No. Ess: nT ra Type name | st 7 ; i I jl rage nu Bagge mM s2322| PRE-SOLDER gery O! era 0.8 37 Hl | 04 8? Beste ~T bes ks 2.5440.2 2.5440.2 | |2.7+0.2 EPs rt - CONNECTION eo cb ch @ GATE 1 ort @) DRAIN 0@ @) SOURCE JEDEC : TO-220AB Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. Fuji Electric Co.,Ltd. 3 5/13 H04-004-03Cc o _ a a, nn s ho = O a =25C D=0.01,Tc f(VDS): Safe operating area ID PIT09 31.099/3 IM Jo JWASUOD LANL ssaudxa ay woyws sasodind Gunaeynuew ayy soy pasn sou Ayed pay Aue yo asn ay] 10) Jaagosjey Aem AUP Ul paso[Isip Jo wa) paldos 'pasnpoidas seyyau aq jeys Key, preg asi9a13 Wn4 Jo Aadosd ayy si urasdy uONeW oyu! ay) pug PeLayeW Siu 107" 10" Fuji Electric Co.,Ltd.This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent. or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Typical output characteristics ID=f(VDS):80s pulse test, Te=25C NA iv Veo 4 BV 4 OV 3.5V vos [Vv] Typical transfer characteristics ID=f(VGS) :80 ws pulse test, VDS=25V, Tch=25C 100 = Fuji Electric Co.,Ltd. 7/13 H04-004-03@D oO c oO _ o 3 DB 3 Cc oD _ TT ho a = o Ah Typical =25C 25V,Tch 804s pulse test, VDS= f (ID) gfs= =25C 80us pulse test, Tch Drain-Source on-State Resistance f (1D) Typical RDS (on) 0 10" 50 Oo = fs] s46 pIT"09 21799)9 Ung JO JasLOS UayIIM Ssaidxa ay] oy sasodind Gurmaeynuew ay) so} pasn Jou Awed puny Aue jo asn aun soy sanaoseym Aem Aue ul paso)asip 30 "1uUa] paidos padnposdas saynau aq eys Ady, pi70F 21219813 M4 Jo Aweadoid ain st wiasay uOIeWsojU! ayy pure |eHeleWw sry o Oo oO Nw [Gu] (uo) sdy Fuji Electric Co.,Ltd. H04-004-03Drain-source on-state resistance RDS (on) =10V f (Tch) : 1D=22. 5A, VGS LW [Ou] (ue) sa Qo - =I1mA a na > os a => f (Tch) : = oO a > om a _ o = 2 o <= o ho = re co) _ oO oo VGS (th) "p70 JIN9AIg Hf Jo IUasUOS USI Ssasdxe aut jnoyuM sasodand Bunysemuew ayl soy pasn sou Aued pan Aue jo asn ay) soy saac0s}eym Aem Aue ul pasolasip 40 "Way pardoa paonpoiday sayyau aq eys Keyy pry "oD 3139819 Ln4 Jo Ayadosd ay) S$! Ulaay UOHewW sou) ByI PUB [eVaTeW Siyt a = [A] (44) S9A ~ Fuji Electric Co.,Ltd.w oO - - - oO oo a a < oO o> hom q = oO - oO a oO a > =45A, Tch=25C VGS=f(Qg) 31D capacitances :VGS=0V, f=] MHz Typica | C=f (VDS) "PIT"09 9198/9 If yO aSsUOD UBTILIM SSaudea ayy Jnoywa sasodind GuynMjoeynuew ay) so) pasn Jou Ayed paiyy Aue jo asrh au) Joy saaaasyeym Aem Aue ul pasolasip JO ywa| paidos paonpoidas Jaynev aq eys Aayy prq"0D J4y9a19 Ning 49 Ayadoud ay) $s! Ulavay vONeWrayU! ay] pue jeaew siUL Fuji Electric Co.,Ltd. H04-004-03Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, tent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without This material an the information herein is the property of the express written consent of Fufi Electric Co.,Lid. Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 us pulse test, Tch=25C 110 100 90 80 70 60 50 40 30 20 10 0.9 0.2 0.4 0.6 0,8 vsD [V] Typical Switching Characteristics vs. ID t=f (1D) :Vec=30V, VGS=10V, RG=10 tr td(on) | Fuji Electric Co.,Ltd. 3 1/13 H04-00403& o - o> c _ a - ow ov > - c o i 3 oO @ & Oo c o G > << = a = f (starting Tch) | (AV) oa [] (A)I 45A s starting Tch Vec=24V, |,, Starting Tch [CC] f (starting Tch) Maximum Avalanche energy vs. Eas P1709 9199/9 Ig Jo Wesuos uay IM Sssaidxa aun oy sasodand Gurnyasesnuew ayy soy pasn sou Aued psy Aue jo asn aut Jo) Jaasosjeum fem Ue ul! pasojdsip JO "jWa] paides pasnpaudaa Jayuau aq yeys Kay) pita 3199)3 Why JO Ayadasd ayy s! Waray UONeWIOyU| By) PU FELALEW SIL Starting Tch [TC] Fuji Electric Co.,Ltd. H04-004-03impedance f(t) parameter xs = ne <= _ _ Cc aD oO Cc a hen _ D=t/T Zthch LOD S o Qo =_ N]o- ~ . . oa oo] ao 7 a S 7 7 2 2 - - [Wx] 9-4ouIZ "PIT" 99 31.199/3 Hh Jo 1uaSuOD UAyUM ssasdxa ay) Woy sasodind Buunyseynuew ayia soy pasn you Ayed pry) Aue jO 3Sf ayy JO) JaADDSTEym Aem Aue Ul pasajasip 20 WUWal paldos paanpojdas sayyau aq jeys Ady) pyyo3 at199)9 Ing 10 Ayadosd aul si Wiasay UONeWwIOyUF 34] pue jelaleW sIyL Fuji Electric Co.,Ltd. HO4-004-03