BAV23S,235 - NXP Semiconductors

1. Product profile

1.1 General description

Dual high-voltage switching diodes, encap sulated in small Surface-Moun ted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

High-speed switching at high voltage

High-voltage general-purpose switching

1.4 Quick reference data

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

BAV23 series

Dual high-voltage switching diodes

Rev. 07 — 19 March 2010 Product data sheet

Table 1. Product overview

Type number Package Configuration

NXP JEDEC

BAV23A SOT23 TO-236AB dual common anode

BAV23C SOT23 TO-236AB dual common cathode

BAV23S SOT23 TO-236AB dual series

BAV23 SOT143B - dual isolated

High switching speed: trr 50 ns Low capacitance: Cd2pF

Low leakage current Small SMD plastic package

Repetitive peak reverse voltage:

VRRM 250 V

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

IRreverse current VR= 200 V - - 100 nA

VRreverse voltage - - 200 V

trr reverse recovery time [1] --50ns

Product data sheet Rev. 07 — 19 March 2010 2 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

BAV23A

1 cathode (diode 1)

2 cathode (diode 2)

3 common anode

BAV23C

1 anode (diode 1)

2 anode (diode 2)

3 common cathod e

BAV23S

1 anode (diode 1)

2 cathode (diode 2)

3 cathode (diode 1),

anode (diode 2)

BAV23

1 cathode (diode 1)

2 cathode (diode 2)

3 anode (diode 2)

4 anode (diode 1)

006aab099

006aab034

006aaa763

006aab100

Product data sheet Rev. 07 — 19 March 2010 3 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Tabl e 4. Ordering information

Type number Package

Name Description Version

BAV23A - plastic surface-mounted package; 3 leads SOT23

BAV23C

BAV23S

BAV23 - plastic surface-mounted package; 4 leads SOT143B

Table 5. Marking codes

Type number Marking code[1]

BAV23A *V0

BAV23C *V9

BAV23S *V5

BAV23 *L3

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

VRRM repetitive peak reverse

voltage -250V

VRreverse voltage - 200 V

IFforward current [1] -225mA

[2] -125mA

IFRM repetitive peak forward

current -625mA

IFSM non-repetitive peak forward

current square wave [3]

tp=1s-9A

tp= 100 s-3A

tp=10ms - 1.7 A

Product data sheet Rev. 07 — 19 March 2010 4 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

[1] Single diode loaded.

[2] Double diode loaded.

[3] Tj=25C prior to surge.

[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

Per device

Ptot total power dissipation Tamb 25 C[4] -250mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Table 6. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 500 K/W

Rth(j-sp) thermal resistance from

junction to solder poi nt - - 360 K/W

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VFforward voltage IF=100mA --1.0V

IF=200mA --1.25V

IRreverse current VR= 200 V - - 100 nA

VR=200V; T

j= 150 C - - 100 A

Cddiode capacitance f = 1 MHz; VR=0V --2pF

trr reverse recovery time [1] --50ns

Product data sheet Rev. 07 — 19 March 2010 5 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

(1) Tamb = 150 C

(2) Tamb =85C

(3) Tamb =25C

(4) Tamb =40 C

Based on square wave currents.

Tj=25C; prior to surge

Fig 1. Forward current as a function of forward

voltage; typical values Fig 2. Non-repetitive peak forwa rd current as a

function of pul se duration; maximum values

(1) Tamb = 150 C

(2) Tamb =85C

(3) Tamb =25C

(4) Tamb =40 C

Fig 3. Revers e current as a function of reverse voltage; typical values

VF (V)

0 1.61.20.4 0.8

006aab212

200

400

600

(mA)

(1) (3)

(4)

(2)

mbg703

102

IFSM

(A)

10−1

tp (μs)

110

103

10 102

006aab213

102

(μA)

VR (V)

0 250200100 15050

10−1

10−2

10−3

10−4

10−5

(4)

(1)

(2)

(3)

Product data sheet Rev. 07 — 19 March 2010 6 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

8. Test information

f=1MHz; T

amb =25C FR4 PCB, standard footprint

(1) Single diode loaded.

(2) Double diode loaded.

Fig 4. Diod e capacitance as a function of reverse

voltage; typical values Fig 5. Forward current as a function of ambient

temperature; derating curves

mbg447

04862 VR (V)

1.0

0.8

0.2

0.6

0.4

(pF)

Tamb (°C)

0 20015050 100

006aab214

100

200

300

(mA)

(2)

(1)

(1) IR=1mA

Fig 6. Reverse recovery time test circuit and waveforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Product data sheet Rev. 07 — 19 March 2010 7 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 7. Package outline SOT23 (TO-236AB) Fig 8. Package outline SOT143B

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1 1.4

1.2

0.48

0.38 0.15

0.09

04-11-16Dimensions in mm

3.0

2.8 1.1

0.9

2.5

2.1 1.4

1.2

1.7

1.9

0.48

0.38 0.15

0.09

0.45

0.15

0.88

0.78

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quan tity

3000 10000

BAV23A SOT23 4 mm pitch, 8 mm tape and reel -215 -235

BAV23C

BAV23S

BAV23 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235

Product data sheet Rev. 07 — 19 March 2010 8 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

11. Soldering

Fig 9. Reflow soldering footprint SOT23 (TO -2 36 AB)

Fig 10. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 07 — 19 March 2010 9 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

Fig 11. Reflow soldering footprint SOT143B

Fig 12. Wave soldering footprint SOT143B

solder lands

solder resist

occupied area

solder paste

sot143b_fr

0.9

0.60.7

3.25

0.6

(3×)

0.6

(3×)

0.5

(3×)

0.7

(3×)

1.9

0.75 0.95

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot143b_fw

4.6

4.45

1.2

(3×)

1.425

(3×)

1.425

1.2

2.2

2.575

Dimensions in mm

Product data sheet Rev. 07 — 19 March 2010 10 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAV23_SER_7 20100319 Product data sheet - BAV23_SER_6

Modifications: •Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted

•Type numbers BAV23A and BAV23C added

•Table 5 “Marking codes”: updated

•Figure 6: adaptation of test condition to specified characteristics in Table 8

•Figure 9, 10, 11 and 12: updated

•Section 13 “Legal information”: updated

BAV23_SER_6 20080303 Product data sheet - BAV23S _5

BAV23_2

BAV23S_5 20011012 Product specification - BAV23 S _4

BAV23_2 19960917 Product specification - BAV23_1

Product data sheet Rev. 07 — 19 March 2010 11 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect , incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe propert y or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third party

customer(s) (herei nafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semicondu ctors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and t he

product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 07 — 19 March 2010 12 of 13

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAV23 series

Dual high-voltage switching diodes

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 March 2010

Document identifier: BAV23_SER_ 7

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Te st information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13