RN1909AFS - Toshiba - Pdf.Support

RN1907AFS~RN1909AFS

2007-11-01

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

RN1907AFS, RN1908AFS, RN1909AFS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into a fine-pitch, small-mold (6-pin)

package.

• Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers the assembly cost.

• Complementary to the RN2907AFS~RN2909AFS

Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO 50 V

Collector-emitter voltage

RN1907AFS~RN1909AFS

VCEO 50 V

RN1907AFS 6

RN1908AFS 7

Emitter-base voltage

RN1909AFS

VEBO

Collector current IC 80 mA

Collector power dissipation PC (Note 1) 50 mW

Junction temperature Tj 150 °C

Storage temperature range

RN1907AFS~RN1909AFS

Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-1F1D

Weight: 0.001 g (typ.)

Type No. R1 (kΩ) R2 (kΩ)

RN1907AFS 10 47

RN1908AFS 22 47

RN1909AFS 47 22

Equivalent Circuit

(top view)

fS6

1. EMITTER1

2. BASE1

3. COLLECTOR2

4. EMITTER2

5. BASE2

6. COLLECTOR1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

0.15±0.05

0.1±0.05

0.8±0.05

1.0±0.05

0.7±0.05

0.1±0.05

0.350.35

1.0±0.05

0.1±0.05

0.48

+0.02

-0.04

6 5 4

1 2 3

Q1 Q2

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RN1907AFS~RN1909AFS

2007-11-01

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristic Symbol Test Condition Min Typ. Max Unit

ICBO V

CB = 50 V, IE = 0 ⎯ ⎯ 100

Collector cutoff current RN1907AFS~1909AFS

ICEO V

CE = 50 V, IB = 0 ⎯ ⎯ 500

RN1907AFS VEB = 6 V, IC = 0 0.088 ⎯ 0.131

RN1908AFS VEB = 7 V, IC = 0 0.085 ⎯ 0.126

Emitter cutoff current

RN1909AFS

IEBO

VEB = 15 V, IC = 0 0.182 ⎯ 0.271

RN1907AFS 80 ⎯ ⎯

RN1908AFS 80 ⎯ ⎯

DC current gain

RN1909AFS

hFE V

CE = 5 V, IC = 10 mA

70 ⎯ ⎯

Collector-emitter

saturation voltage RN1907AFS~1909AFS VCE (sat) IC = 5 mA,

IB = 0.25 mA ⎯ ⎯ 0.15 V

RN1907AFS 0.8 ⎯ 1.8

RN1908AFS 1.0 ⎯ 3.0

Input voltage (ON)

RN1909AFS

VI (ON) V

CE = 0.2 V, IC = 5 mA

2.0 ⎯ 6.4

RN1907AFS 0.6 ⎯ 0.9

RN1908AFS 0.7 ⎯ 1.2

Input voltage (OFF)

RN1909AFS

VI (OFF) V

CE = 5 V, IC = 0.1 mA

1.5 ⎯ 2.6

Collector output

capacitance RN1907AFS~1909AFS Cob VCB = 10 V, IE = 0,

f = 1 MHz ⎯ 0.7 ⎯ pF

RN1907AFS 8 10 12

RN1908AFS 17.6 22 26.4

Input resistor

RN1909AFS

R1 ⎯

37.6 47 56.4

kΩ

RN1907AFS 0.17 0.213 0.255

RN1908AFS 0.374 0.468 0.562

Resistor ratio

RN1909AFS

R1/R2 ⎯

1.71 2.14 2.56

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RN1907AFS~RN1909AFS

2007-11-01

IC - VI (ON)

0.1

100

0.1 1 10 100

INPUT VOLTAGE 　VI (ON) (V)

COLLECTOR CURRENT　IC (mA)

COMMON EMITTER

VCE = 0.2V

-25

IC - VI (OFF)

100

1000

10000

0.2 0.4 0.6 0.8 1 1.2 1.4

INPUT VOLTAGE 　VI (OFF) (V)

COLLECTOR CURRENT　IC (uA)

COMMON EMITTER

VCE = 5V

-25

Ta = 100°C

RN1907AFS RN1907AFS

IC - VI (ON)

0.1

100

0.1 1 10 100

INPUT VOLTAGE 　VI (ON) (V)

COLLECTOR CURRENT　IC (mA)

COMMON EMITTER

VCE = 0.2V

-25

IC - VI (OFF)

100

1000

10000

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

INPUT VOLTAGE 　VI (OFF) (V)

COLLECTOR CURRENT　IC (uA)

COMMON EMITTER

VCE= 5V

-25

IC- VI (ON)

0.1

100

0.1 1 10 100

INPUT VOLTAGE 　VI (ON) (V)

COLLECTOR CURRENT　IC (mA)

COMMON EMITTER

VCE = 0.2V

-25

IC - VI (OFF)

100

1000

10000

012345

INPUT VOLTAGE 　VI (OFF) (V)

COLLECTOR CURRENT　IC (uA)

COMMON EMITTER

VCE= 5V

-25

RN1908AFS RN1908AFS

RN1909AFSRN1909AFS

Ta = 100°C

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RN1907AFS~RN1909AFS

2007-11-01

hFE - IC

100

1000

110100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN 　hFE

COMMON EMITTER

VCE = 5V

-25

VCE (sat) - IC

0.01

0.1

1 10 100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE VCE (sat) ( V)

COMMON EMITTER

IC / IB = 20

-25

Ta = 100°C

RN1907AFS

hFE - IC

100

1000

110100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN 　hFE

COMMON EMITTER

VCE= 5V

-25

VCE (sat) - IC

0.01

0.1

1 10 100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE VCE (sat) ( V)

COMMON EMITTER

IC / IB = 20

25-25

hFE - IC

100

1000

110100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN 　hFE

COMMON EMITTER

VCE = 5V

-25

VCE (sat) - IC

0.01

0.1

1 10 100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE VCE (sat) ( V)

COMMON EMITTER

IC / IB = 20

-25

RN1908AFS RN1908AFS

RN1909AFS

Ta = 100°C

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RN1907AFS~RN1909AFS

2007-11-01

Type Name Marking

RN1907AFS

RN1908AFS

RN1909AFS

Type Name

1 2 3

45 6

Type Name

1 2 3

45 6

Type Name

1 2 3

45 6

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RN1907AFS~RN1909AFS

2007-11-01

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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

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