MMBT3904-13-01-F - DIODES INC

MMBT3904

Document number: DS30036 Rev. 25 - 2

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March 2017

MMBT3904

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features

 Epitaxial Planar Die Construction

 Complementary PNP Type Available (MMBT3906)

 Ideal for Medium Power Amplification and Switching

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads. Solderable per

MIL-STD-202, Method 208

 Weight: 0.008 grams (Approximate)

Ordering Information (Notes 4 & 5)

Product

Status

Compliance

Marking

Reel Size (inches)

Tape Width (mm)

Quantity per Reel

MMBT3904-7-F

Active

AEC-Q101

K1N

7

8

3,000

MMBT3904Q-7-F

Active

Automotive

K1N

7

8

3,000

MMBT3904Q-13-F

Active

Automotive

K1N

13

8

10,000

MMBT3904-13-F

Active

AEC-Q101

K1N

13

8

10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

2021

Code

B

C

D

E

F

G

H

I

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

SOT23

Device Symbol

Top View

Pin-Out

K1N = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: D = 2016)

M or M = Month (ex: 9 = September)

C

E

B

SOT23

e3

MMBT3904

Document number: DS30036 Rev. 25 - 2

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MMBT3904

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

200

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

PD

310

mW

(Note 7)

350

Thermal Resistance, Junction to Ambient

(Note 6)

RθJA

403

°C/W

(Note 7)

357

Thermal Resistance, Junction to Leads

(Note 8)

RθJL

350

°C/W

Operating and Storage Temperature Range

TJ,TSTG

-55 to +150

°C

ESD Ratings (Note 9)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.

8. Thermal resistance from junction to solder-point (at the end of the leads).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MMBT3904

Document number: DS30036 Rev. 25 - 2

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MMBT3904

Thermal Characteristics and Derating Information

025 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 110 100 1k

0

50

100

150

200

250

300

350

400

Transient Thermal Impedance

D=0.5

D=0.2 D=0.1 Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

10m 100m 110 100 1k

0.1

1

10 Single Pulse. Tamb=25°C

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

0.001

0.01

0.1

1

0.1 1 10 100

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I , COLLECTOR CURRENT (A)

C

Fig. 5 Typical Collector Current

vs. Collector-Emitter Voltage

DC

Pw = 100ms

Pw = 10ms

T = 25°C

A

Single Non-repetitive Pulse

DUT mounted onto 1xMRP

FR-4 board

MMBT3904

Document number: DS30036 Rev. 25 - 2

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MMBT3904

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

60



V

IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

40



V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

6.0



V

IE = 10μA, IC = 0

Collector Cut-Off Current

ICEX



50

nA

VCE = 30V, VEB(OFF) = 3.0V

Base Cut-Off Current

IBL



50

nA

VCE = 30V, VEB(OFF) = 3.0V

Emitter Base Cut-Off Current

IEBO



50

nA

VEB = 6V

Collector-Base Cut-Off Current

ICBO



50

nA

VCB = 48V

ON CHARACTERISTICS (Note 10)

DC Current Gain

hFE

40

70

100

60

30



300



IC = 100µA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)



0.20

0.30

V

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

0.65



0.85

0.95

V

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

COBO



4.0

pF

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance

CIBO



8.0

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Input Impedance

hIE

1.0

10

kΩ

VCE = 10V, IC = 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

hRE

0.5

8.0

x 10-4

Small Signal Current Gain

hFE

100

400



Output Admittance

hOE

1.0

40

µS

Current Gain-Bandwidth Product

fT

300



MHz

VCE = 20V, IC = 10mA,

f = 100MHz

Noise Figure

NF



5.0

dB

VCE = 5.0V, IC = 100μA,

RS = 1.0kΩ f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

tD



35

ns

VCC = 3.0V, IC = 10mA,

VBE(OFF) = - 0.5V, IB1 = 1.0mA

Rise Time

tR



35

ns

Storage Time

tS



200

ns

VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1.0mA

Fall Time

tF



50

ns

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

MMBT3904

Document number: DS30036 Rev. 25 - 2

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MMBT3904

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1

10

1,000

100

0.1 110 1,000

100

h , DC CURRENT GAIN

FE

I , COLLECTOR CURRENT (mA)

Fig. 1 Typical DC Current Gain vs. Collector Current

C

0.01

0.1

1

0.1 1 10 100 1,000

V , COLLECTOR-EMITTER

(V)

CE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

Fig. 2 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

0.1

1

10

0.1 1 10 100 1,000

V , BASE-EMITTER SATURATION VOLTAGE (V)

BE(SAT)

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical Base-Emitter Saturation Voltage

vs. Collector Current

IC

B

I= 10

T = 25°C

AT = 75°C

A

T = -25°C

A

T = 125°C

A

0

5

15

10

0.1 110 100

CAPACITANCE (pF)

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Capacitance Characteristics

R

MMBT3904

Document number: DS30036 Rev. 25 - 2

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MMBT3904

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.890

1.00

0.975

K1

0.903

1.10

1.025

L

0.45

0.61

0.55

L1

0.25

0.55

0.40

M

0.085

0.150

0.110

a

0°

8°

--

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

Dimensions

Value (in mm)

C

2.0

X

0.8

X1

1.35

Y

0.9

Y1

2.9

J

K1 K

L1

GAUGE PLANE

0.25

H

L

M

All 7°

A

CB

D

G

F

a

X

Y

Y1 C

X1

MMBT3904

Document number: DS30036 Rev. 25 - 2

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MMBT3904

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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