KBJ10A – KBJ10M 1 of 3 © 2002 Won-Top Electronics
KBJ10A – KBJ 10M
10A BRIDGE RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop A
! High Current Capability G
! High Reliability
! High Surge Current Capability B
! Ideal for Printed Circuit Boards C + ~ ~ -
H
J L D
K E
Mechanical Data P P P
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208 N
! Polarity: As Marked on Body
! Weight: 4.0 grams (approx.)
! Mounting Position: Any R
! Marking: Type Number G
S
T
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate current by 20%.
Characteristic Symbol KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TC = 100°C
@T
A = 25°C IO10
3.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 170 A
I2t Rating for Fusing (t < 8.35ms) I2t 120 A2s
Forward Voltage (per diode) @IF = 5.0A VFM 1.05 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocki ng Voltage @TC = 100°C IR5.0
500 µA
Typical Thermal Resistance (Note 1) RJC 2.5 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Note: 1. Thermal resistance junction to cas e, mounted on 150 x 150 x 1.6mm thick Cu plate heatsink.
WTE
POWER SEMICONDUCTORS
KBJ-4
Dim Min Max
A24.7 25.3
B14.7 15.3
C—4.0
D17.0 18.0
E3.3 3.7
G3.1Ø 3.4Ø
H1.05 1.45
J1.7 2.1
K0.9 1.1
L1.5 1.9
M4.8 5.16
N3.8 4.4
P7.3 7.7
R9.3 9.7
S3.4 3.9
T0.6 0.8
All Dimensions in mm