BPW 34 FA
Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing
BPW 34 FAS BPW 34 FAS (R18R)
2004-03-10 1
BPW34FA, BPW34FAS, BPW34FAS (R18R)
Wesentliche Merkmale
• Speziell g eeignet für den Welle nlängenbereich
von 830 nm bis 880 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 FAS/(R18R): geeignet für
Vapor-Phase Löten und IR-Reflow Löten
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerung
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type Bestellnummer
Ordering Code
BPW 34 FA Q62702-P1129
BPW 34 FAS Q62702-P463
BPW 34 FAS (R18R) Q62702-P1829
Features
• Especially s uitable for the wavelength range of
830 nm to 880 nm
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 FAS/(R18R): Suitable for vapor-phase
and IR-reflow soldering
Applications
• IR-remote control of hi-fi and TV sets, video
tape recorders, remote controls of various
equipment
• Photointerrupters
2004-03-10 2
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR
VR (t<2min) 16
32 V
V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Ee = 1 mW/cm2
Ip50 (≥ 40) µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 880 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ730 … 1100 nm
Bestrahlungsem pfindl iche Fläche
Radiant sensitive area A7.00 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.65 ×2.65 mm ×mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR 2 (≤ 30) nA
Spektrale Fotoempfindlichke it
Spectral sensitivity Sλ0.65 A/W
Quantenausbeute
Quantum yield η0.93 Electrons
Photon
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO320 (≥ 250) mV
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
2004-03-10 3
Kurzschlußstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 23 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.03 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 3.9 ×10– 14
Nachweisgrenze, VR = 10 V,
Detection limit D* 6.8 ×1012
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
2004-03-10 4
Relati ve Sp ectral Sen si ti vi ty
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Cha ra cter istics
Srel = f (ϕ)
λ
OHF01430
400
rel
S
0600 800 1000 nm 1200
10
20
30
40
50
60
70
80
%
100
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ee), VR = 5 V
Open-Ci r cu it V oltage VO = f (Ee)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01428
e
0
10
P
Ι
-1
10 10 110 210 4
10 0
10 1
10 2
10 34
10
3
10
2
10
1
10
10 0
VO
µ
AmV
Ι
P
VO
2
W/cm
µ
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10 0
10 1
10 2
10 3
nA
20 40 60 80 ˚C100
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
2004-03-10 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / D im ensions are s pecified as follo w s: mm (inch).
GEOY6643
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34 FA
BPW 34 FAS
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
±0.2 (0.008)
Chip position
0...0.1
2004-03-10 6
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
Maße werden wi e fo lgt angegeben: m m (inc h) / D im ensions are s pecified as follo w s: mm (inch).
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured char ac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail, it is reaso nable to assume that the health of the user m ay be endangered.
BPW 34 FAS (R18R)
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6916
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)±0.2 (0.008)
0...0.1
Chip position
