Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. H
1/6/10
IS62WV2568ALL
IS62WV2568BLL
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
256K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speedaccesstime:45ns,55ns,70ns
• CMOSlowpoweroperation
– 36 mW (typical) operating
–9µW(typical)CMOSstandby
• TTLcompatibleinterfacelevels
• Singlepowersupply
–1.65V--2.2VVc c (62WV2568ALL)
–2.5V--3.6VVc c (62WV2568BLL)
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• Industrialtemperatureavailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS62WV2568ALL/IS62WV2568BLLarehigh-
speed, 2M bit static RAMs organized as 256K words
by8bits.ItisfabricatedusingISSI's high-performance
CMOStechnology.Thishighlyreliableprocess coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1is HIGH (deselected) orwhenCS2isLOW
(deselected) , the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs.TheactiveLOWWriteEnable
(WE) controls both writing and reading of the memory.
TheIS62WV2568ALLandIS62WV2568BLLarepackaged
intheJEDECstandard 32-pinTSOP(TYPEI),sTSOP
(TYPEI),and36-pinminiBGA.
FUNCTIONAL BLOCK DIAGRAM
JANUARY 2010
A0-A17
CS1
OE
WE
256K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
CS2
IS62WV2568ALL, IS62WV2568BLL
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
1/6/10
PIN DESCRIPTIONS
A0-A17 AddressInputs
CS1 Chip Enable 1 Input
CS2 Chip Enable 2 Input
OE OutputEnableInput
WE Write Enable Input
I/O0-I/O7Input/Output
NC No Connection
Vcc Power
GND Ground
36-pin mini BGA (B) (6mm x 8mm) 32-pin TSOP (TYPE I), sTSOP (TYPE I)
PIN CONFIGURATION
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
Vcc
I/O6
I/O7
A9
A1
A2
OE
A10
CS2
WE
NC
NC
CS1
A11
A3
A4
A5
A17
A16
A12
A6
A7
A15
A13
A8
I/O0
I/O1
Vcc
GND
I/O2
I/O3
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
IS62WV2568ALL, IS62WV2568BLL
Integrated Silicon Solution, Inc. — www.issi.com 3
Rev. H
1/6/10
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Vcc Min. Max. Unit
Vo h OutputHIGHVoltage Io h = -0.1mA 1.65-2.2V 1.4 — V
Io h = -1mA 2.5-3.6V 2.2 — V
Vo L OutputLOWVoltage Io L = 0.1mA 1.65-2.2V — 0.2 V
Io L = 2.1mA 2.5-3.6V — 0.4 V
VI h InputHIGHVoltage 1.65-2.2V 1.4 Vc c + 0.2 V
2.5-3.6V 2.2 Vc c + 0.3 V
VI L (1) InputLOWVoltage 1.65-2.2V –0.2 0.4 V
2.5-3.6V –0.2 0.6 V
IL I InputLeakage GND≤ VI n ≤ Vc c –1 1 µA
IL o OutputLeakage GND≤ Vo u t ≤ Vc c , OutputsDisabled –1 1 µA
Notes:
1.Undershoot:-1.0Vforpulsewidthlessthan10ns.Not100%tested.
2.Overshoot:Vd d +1.0Vforpulsewidthlessthan10ns.Not100%tested.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
Vt e r m TerminalVoltagewithRespecttoGND –0.2toVcc+0.3 V
ts t g StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
OPERATING RANGE (Vcc)
Range Ambient Temperature IS62WV2568ALL IS62WV2568BLL
Commercial 0°Cto+70°C 1.65V-2.2V 2.5V-3.6V
Industrial –40°Cto+85°C 1.65V-2.2V 2.5V-3.6V
IS62WV2568ALL, IS62WV2568BLL
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
1/6/10
AC TEST LOADS
Figure 1 Figure 2
CAPACITANCE(1)
Symbol Parameter Conditions Max. Unit
cI n Input Capacitance VI n = 0V 8 pF
co u t Input/OutputCapacitance Vo u t = 0V 10 pF
Note:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
AC TEST CONDITIONS
Parameter 62WV2568ALL 62WV2568BLL
(Unit) (Unit)
InputPulseLevel 0.4VtoVcc-0.2V 0.4VtoVcc-0.3V
InputRiseandFallTimes 5ns 5ns
InputandOutputTiming Vr e f Vr e f
andReferenceLevel
OutputLoad SeeFigures1and2 SeeFigures1and2
1.65-2.2V 2.5V - 3.6V
r1(Ω) 3070 3070
R2(Ω) 3150 3150
Vr e f 0.9V 1.5V
Vt m 1.8V 2.8V
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
IS62WV2568ALL, IS62WV2568BLL
Integrated Silicon Solution, Inc. — www.issi.com5
Rev. H
1/6/10
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
62WV2568ALL (1.65V-2.2V)
Symbol Parameter Test Conditions Max. Unit
70ns
Ic c VccDynamicOperating Vc c = Max., Com. 15 mA
Supply Current Io u t = 0 mA, f = fm A x Ind. 15
Ic c 1 OperatingSupply Vc c = Max., Com. 3 mA
Current Io u t = 0 mA, f = 0 Ind. 3
Is B 1 TTLStandbyCurrent Vc c = Max., Com. 0.3 mA
(TTLInputs) VI n = VI h or VI L Ind. 0.3
CS1 = VI h , CS2 = VI L ,
f=1MHz
Is B 2 CMOSStandby Vc c = Max., Com. 5 µA
Current(CMOSInputs) CS1
≥
Vc c – 0.2V, Ind. 10
CS2
≤0.2V,
VI n
≥
Vc c – 0.2V, or
VI n
≤
0.2V, f = 0
Note:
1. At f = fm A x , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
62WV2568BLL (2.5V-3.6V)
Symbol Parameter Test Conditions Max. Max. Max. Unit
45ns 55ns 70ns
Ic c VccDynamicOperating Vc c = Max., Com. 35 30 25 mA
Supply Current Io u t = 0 mA, f = fm A x Ind. 40 35 30
Is B 1 TTLStandbyCurrent Vc c = Max., Com. 0.3 0.3 0.3 mA
(TTLInputs) VI n = VI h or VI L Ind. 0.3 0.3 0.3
CS1 = VI h , CS2 = VI L ,
f=1MHz
Is B 2 CMOSStandby Vc c = Max., Com. 10 10 10 µA
Current(CMOSInputs) CS1
≥
Vc c – 0.2V, Ind. 10 10 10
CS2
≤0.2V,
VI n
≥
Vc c – 0.2V, or
VI n
≤
0.2V, f = 0
Note:
1. At f = fm A x , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IS62WV2568ALL, IS62WV2568BLL
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
1/6/10
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE=VI L , cs2 = WE=VI h )
DATA VALID
PREVIOUS DATA VALID
tAA
tOHA tOHA
tRC
DOUT
ADDRESS
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
Symbol Parameter
45ns 55ns 70ns
UnitMin. Max. Min. Max. Min. Max
tr c ReadCycleTime 45 — 55 — 70 — ns
tA A AddressAccessTime — 45 — 55 — 70 ns
to h A OutputHoldTime 10 —10 —10 —ns
tA c s 1/tA c s 2CS1/CS2AccessTime — 45 — 55 — 70 ns
td o e OEAccessTime —20 — 25 — 35 ns
th z o e (2) OEtoHigh-ZOutput — 15 — 20 — 25 ns
tL z o e (2) OEtoLow-ZOutput 5 — 5 — 5 — ns
th z c s 1/th z c s 2(2) CS1/CS2toHigh-ZOutput 015 0 20 0 25 ns
tL z c s 1/tL z c s 2(2) CS1/CS2toLow-ZOutput 10 —10 —10 —ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V,inputpulselevelsof0.4to1.4V
andoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
IS62WV2568ALL, IS62WV2568BLL
Integrated Silicon Solution, Inc. — www.issi.com7
Rev. H
1/6/10
AC WAVEFORMS
READ CYCLE NO. 2(1,3) (CS1, CS2, OE Controlled)
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE, CS1= VI L . cs2=WE=VI h .
3. Address is valid prior to or coincident with CS1LOWandcs2 hIgh transition.
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACS1/
t
ACS2
t
LZCS1/
t
LZCS2
t
HZOE
HIGH-Z DATA VALID
t
HZCS
ADDRESS
OE
CS1
CS2
DOUT
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8 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
1/6/10
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)(OverOperatingRange)
Symbol Parameter
45ns 55ns 70ns
UnitMin. Max. Min. Max. Min. Max
tW c WriteCycleTime 45 — 55 — 70 — ns
ts c s 1/tscs2CS1/CS2 to Write End 35 — 45 — 60 —ns
tA W AddressSetupTimetoWriteEnd 35 — 45 — 60 —ns
th A AddressHoldfromWriteEnd 0—0—0—ns
ts A AddrressSetupTime 0—0—0—ns
tP W e WEPulseWidth 35 — 40 — 50 — ns
ts d Data Setup to Write End 20 — 25 — 30 —ns
th d DataHoldfromWriteEnd 0—0—0—ns
th z W e WELOWtoHigh-ZOutput —20 —20 —20 ns
tL z W e WEHIGHtoLow-ZOutput 5 — 5 — 5 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V,inputpulselevelsof0.4Vto1.4V
andoutputloadingspeciedinFigure1.
2. TheinternalwritetimeisdenedbytheoverlapofCS1LOW,CS2HIGHandWELOW.Allsignalsmustbeinvalidstatesto
initiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtothe
rising or falling edge of the signal that terminates the write.
3. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OE=HIGHorLOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
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Rev. H
1/6/10
AC WAVEFORMS
WRITE CYCLE NO. 2 (WEControlled:OEisHIGHDuringWriteCycle)
WRITE CYCLE NO. 3 (WEControlled:OEisLOWDuringWriteCycle)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
OE
CS1
CS2
WE
DOUT
DIN
IS62WV2568ALL, IS62WV2568BLL
10 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
1/6/10
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. Max. Unit
Vd r VccforDataRetention SeeDataRetentionWaveform 1.0 3.6 V
Id r DataRetentionCurrent Vcc=1.0V,CS1 ≥Vcc–0.2V — 10 µA
ts d r DataRetentionSetupTime SeeDataRetentionWaveform 0 — ns
tr d r RecoveryTime SeeDataRetentionWaveform tr c — ns
DATA RETENTION WAVEFORM (CS1 Controlled)
DATA RETENTION WAVEFORM (CS2 Controlled)
V
CC
CS1 ≥ V
CC
-
0.2V
t
SDR
t
RDR
V
DR
CS1
GND
3.0V
2.2V
Data Retention Mode
V
CC
CS2 ≤ 0.2V
t
SDR
t
RDR
V
DR
0.4V
CS2
GND
3.0
2.2V
Data Retention Mode
IS62WV2568ALL, IS62WV2568BLL
Integrated Silicon Solution, Inc. — www.issi.com 11
Rev. H
1/6/10
ORDERING INFORMATION
IS62WV2568ALL (1.65V - 2.2V)
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No. Package
70 IS62WV2568ALL-70T TSOP,TYPEI,
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No. Package
70 IS62WV2568ALL-70TI TSOP,TYPEI
70 IS62WV2568ALL-70TLI TSOP,TYPEI,Lead-free
70 IS62WV2568ALL-70BI miniBGA(6mmx8mm)
70 IS62WV2568ALL-70BLI miniBGA(6mmx8mm),Lead-free
70 IS62WV2568ALL-70HI sTSOP,TYPEI
70 IS62WV2568ALL-70HLI sTSOP,TYPEI,Lead-free
IS62WV2568BLL (2.5V - 3.6V)
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No. Package
70 IS62WV2568BLL-70T TSOP,TYPEI
70 IS62WV2568BLL-70B miniBGA(6mmx8mm)
70 IS62WV2568BLL-70H sTSOP,TYPEI
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No. Package
45 IS62WV2568BLL-45HLI sTSOP,TYPEI
45 IS62WV2568BLL-45TLI TSOP,TYPEI,Lead-free
55 IS62WV2568BLL-55TI TSOP,TYPEI
55 IS62WV2568BLL-55TLI TSOP,TYPEI,Lead-free
55 IS62WV2568BLL-55BI miniBGA(6mmx8mm)
55 IS62WV2568BLL-55BLI miniBGA(6mmx8mm),Lead-free
55 IS62WV2568BLL-55HI sTSOP,TYPEI
55 IS62WV2568BLL-55HLI sTSOP,TYPEI,Lead-free
70 IS62WV2568BLL-70TI TSOP,TYPEI
70 IS62WV2568BLL-70BI miniBGA(6mmx8mm)
70 IS62WV2568BLL-70HI sTSOP,TYPEI
IS62WV2568ALL, IS62WV2568BLL
12 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
1/6/10
IS62WV2568ALL, IS62WV2568BLL
Integrated Silicon Solution, Inc. — www.issi.com 13
Rev. H
1/6/10
IS62WV2568ALL, IS62WV2568BLL
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Rev. H
1/6/10
NOTE :
1. CONTROLLING DIMENSION : MM .
2. Reference document : JEDEC MO-207
08/12/2008
Package Outline