Preliminary Technical Information Linear Power MOSFET IXTB62N50L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS(on) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 62 A IDM TC = 25C, pulse width limited by TJM 150 A IAR TC = 25C 62 A EAR TC = 25C G D 80 mJ J 800 W -55 to +150 C TJM 150 C Tstg -55 to +150 C z PD TC = 25C TJ (TAB) S G = Gate D = Drain S = Source TAB = Drain Features TL 1.6 mm (0.063 in) from case for 10 s 300 C z TSOLD Plastic body for 10 s 260 C z Fc Mounting force 20...120/4.5...27 N/lb. 10 g Weight V A PLUS 264TM (IXTB) 5.0 EAS = 500 = 62 0.1 Designed for linear operation International standard package Unclamped Inductive switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Applications z z z Symbol Test Conditions BVDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 A IGSS VGS = 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 500 3 TJ = 25C TJ = 125C VGS = 20 V, ID = 0.5 ID25 Note 1 (c) 2007 IXYS CORPORATION, All rights reserved V 5 z z z Programmable loads Current regulators DC-DC converters Battery chargers DC choppers Temperature and lighting controls V Advantages 200 nA 50 1 A mA z 0.10 z z Easy to mount Space savings High power density DS99336A(03/07) http://store.iiic.cc/ IXTB62N50L Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 * ID25, Note 1 10 Ciss Coss 15 S 11500 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 210 pF 36 ns 85 ns 110 ns 75 ns 550 nC 115 nC 180 nC td(on) tr VGS = 15 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG pF 1460 Crss = 2 (External), tf Qg(on) Qgs 20 VGS = 20 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd PLUS 264TM (IXTB) Outline 0.156 C/W RthJC RthCS C/W 0.15 Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 400 V, ID = 0.75 A, TC = 90C 300 Typ. Max. W Ref: IXYS CO 0113 R0 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 62 A Repetitive; pulse width limited by TJM 176 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = IS, -di/dt = 100 A/s, VR = 100V 500 ns Note 1: Pulse test, t 300 s, duty cycle, d 2 % PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTB62N50L Fig. 1. Output Characte ris tics @ 25C Fig. 2. Extended Output Characte ris tics @ 25C 70 160 VGS = 20V 18V 16V 120 40 I D - Amperes I D - Amperes 50 VGS = 20V 140 18V 16V 14V 60 12V 30 10V 20 100 14V 80 60 12V 40 10V 20 9V 8V 9V 10 8V 7V 0 0 1 2 3 4 0 5 0 6 2 4 6 Fig. 3. Output Characte ris tics @ 125C 12 14 16 18 20 3.1 VGS = 20V R D S (on) - Normalized 50 10V 40 30 9V 20 8V 10 0 2 4 6 8 10 2.5 2.2 1.9 I D = 62A 1.6 I D = 31A 1.3 1 0.7 7V 6V 0 VGS = 20V 2.8 16V 14V 12V 60 I D - Amperes 10 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 70 0.4 12 14 -50 -25 0 25 50 75 100 125 V D S - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs . ID Fig. 6. Drain Current vs. Cas e Te m perature 3 150 70 2.8 VGS = 20V 60 2.6 TJ = 125C 2.4 50 I D - Amperes R D S (on) - Normalized 8 V D S - Volts V D S - Volts 2.2 2 1.8 1.6 40 30 20 1.4 1.2 10 TJ = 25C 1 0.8 0 0 15 30 45 60 75 90 105 120 135 150 I D - Amperes -50 -25 0 25 50 75 100 TC - Degrees Centigrade (c) 2007 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 125 150 IXTB62N50L Fig. 8. Transconductance 100 30 90 27 80 24 TJ = -40C 70 21 25C 125C g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 60 50 40 TJ = 125C 30 25C -40C 20 18 15 12 9 6 10 3 0 0 5 6 7 8 9 10 11 12 13 14 0 10 20 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 80 90 Fig. 10. Gate Charge 250 20 225 18 200 16 I D = 31A 14 I G = 10mA 175 VG S - Volts I S - Amperes 40 I D - Amperes 150 125 100 75 VDS = 250V 12 10 8 6 TJ = 125C 50 4 TJ = 25C 25 2 0 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0 V S D - Volts 100,000 Capacitance - pF f = 1MHz C iss 10,000 C oss 1,000 C rss 100 5 10 15 20 200 300 400 Q G - nanoCoulombs Fig. 11. Capacitance 0 100 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 500 100 IXTB62N50L Fig. 12. Forw ard-Bias Safe Fig. 13. Forw ard-Bias Safe Operating Area @ T C = 25C Operating Area @ T C = 90C 1000 1000 TJ = 150C TJ = 150C R DS( on) Limit R DS( on) Limit 25s 100s 1ms 10 10ms 100 I D - Amperes I D - Amperes 100 25s 100s 10 1ms 10ms DC 1 1 DC 0.1 0.1 10 100 1000 10 100 1000 V D S - Volts V D S - Volts Fig. 14. Maximum Transient Thermal Impedance Z (th) J C - (C/W) 1.000 0.100 0.010 0.001 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2007 IXYS CORPORATION, All rights reserved IXYS REF: T_62N50L (9N) 4-05-07-A.xls http://store.iiic.cc/