2N5657
S ILICON NPN TRANSIST OR
■STMicroelec tronic s PREF ERRE D
SALESTYPE
■NPN TRANSISTOR
DESCRIPTION
The 2N5657 is a silicon epitaxial-base NPN
transistor in Jedec SOT-32 plastic package. It is
intended for use output amplifiers, low current,
high voltage converters and AC line relays.
INTERNAL SCHEMATIC DIAG RAM
December 2000
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 375 V
VCEO Collector-Emitter Voltage (IB = 0) 350 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 0.5 A
ICM Collector Peak Current 1 A
IBBase Current 0.25 A
Ptot Total Dissipation at Tc ≤ 25 oC20W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
321
SOT-32
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 6.25 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCE = 375 V 0.01 mA
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = 350 V
VCE = 250 V Tc = 100 oC0.1
1mA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 250 V 0.1 mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 6 V 0.01 mA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage IC = 1 mA 350 V
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = 100 mA L = 50 mH 350 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 0.1 A IB = 10 mA
IC = 0.25 A IB = 25 mA
IC = 0.5 A IB = 0.1 A
1
2.5
10
V
V
V
VBE∗Base-Emitter Voltage IC = 0.1 A VCE = 10 V 1 V
hFE∗DC Current Gain IC = 50 mA VCE = 10 V
IC = 0.1 A VCE = 10 V
IC = 0.25 A VCE = 10 V
IC = 0.5 A VCE = 10 V
25
30
15
5
250
hfe Small Signal Current
Gain IC = 0.1 A VCE = 10 V f = 1KHz 20
fTTransition frequency IC = 50 mA VCE = 10 V f =10MHz 10 MHz
CCBO Collector Base
Capacitance VCB = 10 V f = 100KHz 25 pF
∗ P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
Safe O perat ing Area Der ating Curve
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DC Current Gain (NP N type)
C ollec tor Emit ter Sat uration Volt age (NPN type)
DC Current Gain (PNP type)
Collector Em itt er Saturation Volt age (PNP type)
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
c1
H2
0016114
SOT-32 ( T O-126) MECHAN ICA L DA TA
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