
SD1487
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Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Table 3. Thermal Data
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Table 4. Static
Table 5. Dynamic
Note: 1. f = 30 + 30.001MHz
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 18 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PDISS Power Dissipation 290 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature – 65 to +150 °C
Symbol Parameter Value Unit
RTH(j-c) Junction-Case Thermal Resistance 0.6 °C/W
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BVCBO IC = 100 mA; IE = 0 mA 36 — — V
BVCES IC = 100 mA; VBE = 0 V 36 — — V
BVCEO IC = 100 mA; IB = 0 mA 18 — — V
BVEBO IE = 20 mA; IC = 0 mA 4.0 — — V
ICES VCE = 15 V; IE = 0 mA — — 20 mA
hFE VCE = 5 V; IC = 5 A 10 — 200 —
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
POUT f = 30 MHz; VCE = 12.5 V; ICQ = 150 mA 100 — — W
GPf = 30 MHz; VCE = 12.5 V; ICQ = 150 mA 11 13 — dB
IMD3(1) POUT = 100WPEP; VCE = 12.5 V; ICQ = 150 mA — — –30 dBc
COB f = 1 MHz; VCB = 12.5 V — 400 — pF