STBCmTP)/ WI-Y Mini Type (3-pin) Package hFY YAR FIA-K Transistors, Diodes an & 5 SW 3RE) My 7d, WWE TRBOTY > bE IIRL A RT CRSK DICHHANKIBOIIAF y TIN yErUCERIYLYURAR FT A- FREES RAS NTS SREHCHRBy 7-I CF. Bi & ARK BA U7O-,.7O-MAKOBHISALE ATID ORE e8mmy7-E US, MA MV AY + EOARAHEtEAES HAH BBC WIS Y OAD @OhFLYVABICRRS ST, FET. BAT AF (SBD. NURS, At yvF 7S) OBBEMEL SV tAS. WM Description Mini type (3-pin) package is a small plastic package designed to be soldered directly toPC board of a small electronic equipment and is a standard surface mount package used for transistors, diodes, etc. @ Features Useful for general purposes and can be soldered automatically by flow and reflow techniques. Packed in 8 mm taping, horizontal and vertical type magazines .and is applicable to various automatic surface mounting machines. * Various types of transistors, FETs, diodes (SBD, varistors, switchings, etc.) are provided. Mi Ny 7LEM Standard Package Ratings ABIES ABE Timex) RFR Tstg aT RIB Po 150C 55~+150C 200 mw *! SE) CRG TERORESEOMP HU ETO, THRRBC LAO K ORNL CHEER F AU, * 1: Ta=25C Note) As some types have different ratings, refer to individual ratings before use. #11 Ta=25C Mi4+F2E1 Outline Unit? am U 0.65 +0.15' 15.00 : b6S + 0.15 Pa ao oa 2.9- a o +1 1.45 0.478 bye MB 38/\5 t5K Recommended Land Layout p Unit? mm 2.4 1.9 MA PREGEt HBT ULF RROMARH IS. PFROUGt CBEON IAT aT FA.) Standard Heat Radiation Ratings (At designing heat radiation of PC board, refer to the ratings tabled below.) ne Hi cs Pay *2 Eft (th GASSAM) With PC Board*?(Copper Area) Unit 4mm X 4 mm 8mm X 8mm 12mm X 12mm aT eIRA Po*! (mW) 200 270 340 380 1:Ta=25C *2:HPROIRX LY BIR Glass Epoxy Board (HA t=1.7mm, MAI Area=20mm X 20mm) MEH Packing Style tt #& Style HaVH > Horizontal Magazine MiVHY> Vertical Magazine 8mm Taping 8 @] AX Quantity 50 pes 100 pes Stick Array : 500 pes 3000 pes Panasonic 253 SI B( BRP) 7Y hKSL UAB. STAR Mini Type (3-pin) Package Transistors, Diodes Mvaiiv ttt Magazine Style {t # Style aH #8 = Outward 2K Dimensions Unit : (mm) 3.5 BHVAVL Horizontal Ete Magazine 178.2 w of TF] (50 pcs /Magazine) Unit : (mm) 4.5 , HWY | Vertical . Magazine i 7 (Stick) Fj | (TSK) 7 (100 pes /Magazine) [a)_ts Unit : (mm) ee MVHUL B | Vertical a : 2 Magazine = = (Stick Array) F By EN FS | (TMG) GO Lol 7 (500 pes /Magazine) Oooo - Panasonic 254 SIBBRP NYT a hSL VAR. ATAK Mini Type (3-pin) Package - Transistors, Diodes M>E>7tt# Taping Style F-PIRIR Tape Sprocket TX O O O SIAWL Alay Oia 7 Direction (V-4> 7 Re EM) (Marking faces upward) @>t> 9 +k Taping Dimensions vr? To a a Bo Yor: mm | | | o1.5to 4.0+0.1 _ | - | . S , ! - [ te t=0.3+0.1 | 5 DO te | 1 4 ~ | o N | I | xu w - = Yt f_ | : I } = L-4 pah_-tg} 4.0+0.1 3.2401 | I t BYJbtik Reel Dimensions Unit mm i lo Sli tr leks cols 3|* 15 0178420 10.0415 (3000 pcs /Reel) a a 255 SABOSMPAINYTY Mini Type (3-pin) Package _ Transistors, Diodes | WS B38 DN R-DhIDY A245 RMEER Type Number List of Mini Type (3-pin) Bipolar Transistors W277 | Absolute Max. Electrical Characteristics A 1K He % |i | Rating ft VCE (sat) te E = Application | Type No. | Marking | Vceo Ic hre Ic typ. typ. Ic Note Symbol (V) (mA) (mA) | (MHz) (Vv) (mA) 2SB709A A/B |25/-45| 100 | 160~460 2 80 |0.3 | 100 iA FA | 2SD601A Y/Z | 25/50 100 | 160~460 2) 150 0.3 100 General 2SB710/A | C/D |-25/-50, 500 | 85~340 | 150 | 200 | 0.35 | 300 28D602/A | W/X | 25/50 500 | 85~340 150 | 200 0.35| 300 iD oval losai747, | AL | 50 50 | 200~500 2 |} 250 | <-0.3} 10 | fr : 250MHz (High ft) | 2SC4561 AM 50 50 | 200~500 2 250 | <0.3 10 | fr : 250MHz 2SC3757 2Y | Vces40| 100] 60~320 10 | 450 0.17 10 | ts=10ns & if SW | 2SA1738 AK | ~15 50 | 50~150 | 10!} 1500 |0.1 | ~10 | ts=16ns High speed SW | 2504782 DV |Vces20| 200 | 40~200 10 | 500 0.17 10 | ts=7ns 250-4894 EH |Vces20} 130] 60~200 10 | 500 | 0.17 10 | ts=7ns igh nee (2801030 1Z 40 50 | 400~2000 2| 200 0.05 10 | 2801149 1V 100 20 | 400~2000 2| 140 0.05 10 Darlington | 2SD1478/A | 2N/20 | 25/50 500 | 2000~20000| 500} 1.0 500 {EME HONE | 258792 150 | 50 | 90~450 | 10| 150 |-0.2 | 20 Low Noise | 2SD814/A | P/L | 150/185 50 | 90~450 10 | 150 0.15 20 Amp. 2SA1034/5 | F/H |-35/-55 50 | 180~700 2; 300 |-0.2 | 50 2802405/6 | S/T | 35/55 50 | 180~700 2| 350 0.09: 50 2SB970 IR 10 | 500 | 100~350 | 500 | 130 | 0.16| 400 | 2SD1328 1D 20 500 | 200~800 500 | 200 0.13] 500 Low Vce (sat) | 2SB779 1A | 20 | 500 | 90~350 | 500 | 150 | 0.2 | 500 2SD1938 3W 20 300 | 500~2500 4) 150 0.18; 300 | Ron Vego 25V YxF-AHW | 28D1304 2A | 2043 100 | 160~460 | 2; 150 | 0.3 100 | oe aR and 8 Buin Zener | 2501679 n | 18+5 | 500 | 200~800 500 | 170 | 0.131 500 2SC2778 K 20 30 | 70~250 1 | 230 0.08! 10 | For FM 2SA1022 E 20 | 30 | 50~220 ~1 | 300 |0.1 | 10 | NF2.8dB at SMHz 2502295 Vv 20 30 | 50~220 1 | 300 0.08 10 | For FM RF 2802404 U 20 15 | 40~260 1 | 650 0.05 1 | NF3.3dB at 100MHz | 2503077 1T 20 20} 40~200 3 | 1100 0.2 2 | NF 3dB PG 20dB at UHF = Eigseeg | 2802480 R 20 50} 25~250 2 | 1200 . 0.05 2 | PG20dB at 100MHz Bie - RS | 2SC3967 3U 20 20 | 40~200 3 | 1000 0.12 10 | 3.5V aif, For UHF RF RF Amp. | 2803130 1S 10; 50! 75~400 5 | 1900 0.1 20 | For UHF OSC osc. 2803707 2x 7 10 | 40~300 | (Iv)1 / 4000 0.05 1 | BSENRAR 7 AR) Mix. 2502845 1x 12 70 | 40~200 20 | 4500 0.07 20 | NF1.8dB at 800MHz 2S03110 1U 12 30 | 40~ 10 | 4500 0.05 10 | NF1.3dB at 800MHz 203704 2W 10 80 | 50~300 20 | 6000 | 0.1 20 | NF1.0dB at 800MHz 2503829 3M 10 80 | 50~300 20 | 7200 0.08 20 | NF1.4dB at 800MHz - 2803904 3S 10 65 | 50~300 20 | 9000 0.16 20 | NF2dB at 2GHz SHF IF 2804238 4B 15 50 | 100~300 2 | 1300 | 0.5 20 Display | 2804444 4F 35 50 | 20~100 10 500 | Panasonic 256STB SGwPNINYT LY Mini Type (3-pin) Package MS] (lant BRM RKOSY AZ on BR Type Number List of Mini Type (3-pin) FETs Transistors, Diodes hoLVUAR. ATA a W%#7 | Absolute Max. Electrical Characteristics mB oo |% #23 #B| Rating ne NV gm Vesc loss fi F Application | Type No. | Marking | Vepo Ip typ. lp typ. | Ves | typ. typ. Note Symbol (V)__| (mA) | (ms) | (mA) | (ms) | (V) | (VY) (mA) iz FA | 2SK198 10 30 | 20 | 60 1 12 | O |-0.65 6.4 General 2SK374 2B 55 30 |*2.5dB) 8.2 0 |-1.3 7.5 ALFIE HE 2SK1103 | 4L 50 20 | Ciss 7.0pF | 2.5 |} O |-1.5 2.0 Low Noise | 2SJ163 4M 50 | 20] Giss 10.0pF | 2.5 | O | 1.5 2.0 J-FET | FM RF 2SK608 3L | 30 | 20 |*1.7dB) >5 | 0 |-0.85 8.5 ECMAA 2SK123 1H 20 2 | <4uv) 0 1.6 0 |0.35 0.2 | 2htezeNes exanxaruPLt | 2SK316 1H 10 | 50 Ciss 3.5pF 22 | 0 |-1.05 14 Video Camera Pre-Amp. 2SK1216 | 4T 10 | 50 Ciss 3.5pF 22 | 0 |-1.05 14 RACE TR TYfsl min] Vos 10V Infrared Sensor 2SK1842 EB 40 1 0.05. | f=1KHz | |-1.3 | 30~200,A | Crss typ. IpF. FUABIL 2SK620 3N Vos50 | 100 | Ron 450 20 30 5 2.5 Enhancement F-MOS | 24y#2>4 | 2SK621 30 | Vos50 | 100 | Ron 450] 20 30 | 5 | 2.5 Enhancement FET | Digital 2SK1228 | 4V | Vos50 | 100 | Ciss<15.0pF | >20| 5 | 0.8 2, 5V Drive Switching | 25146 4D |Vos50|100; | min8 |Vos10| | max0.01 33 ( 358 FT AMS Y ASR BER Type Number List of Mini Type (3-pin) Resistor Built-in Transistors 257 Fe % Wee) ABR E | Absolute Max. Electrical Characteristics AR ik Type No. 3c 5 [Register Built-in Rating] Rating Voce (sat) fa & Application PNP NPN Marking | Ra Ree | Voeo Ic hee Ic typ. Ic Note Symbol | (kQ) | (kQ) | (V)_ | (mA) (mA) | (V)_ | (mA) UN2111_ | UN2211 | 6A/8A| 10 10 35~ | UN2112 | UN2212 | 6B/8B | 22 22 60~ UN2113 | UN2213 | 6C/8C | 47 47 80~ UN2114 | UN2214 |6D/8D | 10 47 80~ UN2115 | UN2215 |6E/8E | 10 a0 160~ UN2116 | UN2216 |6F/8F ) 4.7 oo 160~ UN2117 | UN2217 | 6H/8H | 22 a0 160~ RAG VAS UN2118 | UN2218 | 61/8! | 0.51 5.1 50/50 | 100/100 20~ | 5/5 10.18/-0.18/10/10| Basic Transistors . ,- | UN2119 | UN2219 |6K/8K| 1 10 30~ | (Vce=10V) (e=0.3mA)| (PNP) 2SB709A nee UN2110 | UN2210 | 6L/8L | 47 09 160~ (NPN) 2SD601A : UN211D | UN221D |6M/8M) 47 10 30~ viak UN211E | UN221E | 6N/8N | 47 22 60~ Switching UN211F | UN221F | 60/80 | 4.7 10 30~ UN211H 6P/ | 2.2 10 30~ General UN2ITL | UN221L [60/80 | 4.7 | 4.7 20~ _ UN221K |-/8P | 10 4.7 20~ UN211M | UN221M | EI/EL | 2.2 4.7 80~ UN2121 | UN2221 | 7A/9A| 2.2 2.2 40~ UN2122 | UN2222 |7B/9B| 4.7 | 4.7 50~ BAKSLUAZS UN2123 | UN2223 | 7C/9C | 10 10 50/50 |500/500 60~ 100/100 |0.14/0.14| 100/100 Basic Transistors UN2124 | UN2224 | 7D/9D| 2.2 10 60~ (PNP) 2SB710A UN212X 7 0.27 5 50~ | (NPN) 2SD602A UN212Y 7Y 3.1) 4.6 50~ (ER) (Equivalent Circuit) c c Ra Ra 8 B (PNP) Pee be (NPN) Pee Oe ee ee Panasonic| SIR (BMP yay L Mini Type (3-pin) Package ROU VARLATAK Transistors, Diodes MS (38F) 974K he KMR Type Number List of Mini Typ (3-pin) Diodes Sh | 62 ee76 | Absolute Max. Electrical Characteristics FR | We OK RB CS | Rating max, VF max, CD max. tt fe = Application | Type No. | Pn Con | Marking VR le *typ. lr *typ. | VR *typ. IF (Note) nection Symbol (Vv) (mA) (V) | (mA) | (pF) (Vv) (ns) | (mA) | MA7AWA_ | @ | Miv | 35 | 100 [10 | 100 | 1.3| 6 [0.58| 2 |i aarae a fgg MA74WK | @ M1W 35 | 100 | 1.0 | 100 | 1.3] 6 | 0.58 2 | eatode Common Ban MA75WA @ MIX 35 | 100 | 1.0 | 100 | 1.2] 6 |r=o.asn] 2 Arode Conner Switching | MA75WK MIY 35 | 100 | 1.0 | 100 | 1.2] 6 |r=ossn) 2 | 27> FRR TAR MA57 @ Mx 35 | 100 | 1.0 | 100 | *1.3] 15 | rf=0.580 MAI51A @ MA 40 | 100 | 1.2 | 100 | 2 0 3 10 | se Be ape: MA151K @ MH 40 100 | 1.2 100 2 0 3 10 | Reverse Pin Alignment MAI524 @ MB 80 | 100 | 1.2 | 100 | 2 0 3 10 | $e acme: MA152K @ MI 80 100 | 1.2 100 2 0 3 10 | Reverse Pin Alignment A FA; MAISIWA | MN 40 | 100 | 1.2 | 100 | 15 0 | 10 10 | ances Gnza TPR AtyFL9 | MAISIWK | @ | MT 40 | 100 [1.2 | 100 | 2 O | 3 | 10 | dairede common MAI52WA | Mo so | 100 [1.2 | 100 | 15 0 | 10 | 10 | 72 $Me T AM General MAI52WK | @ MU 80 | 100 | 1.2 | 100 | 2 0 3 10 | 275 Fee FAR Switching | MA153/A | G | MC/MP | 40/80| 100 | 1.2 | 100 | 5 o| | |g), caeeerae MA157/A & | MR/MS | 40/80; 100 | 1.2 | 100 | 2 0 3 10 | S35 Gee TAR MAI58 & MC 200 | 100 | 1.3 | 100 / |] | | MA198 S M2F 35 | 100 | 1.2 | 100 | 2 6 | 100 10 | Sos Cie Fm MA199 & M2Y 200 | 100 | 1.2 | 100 | 2 6 | 100 | 10 IRAE | MA28 @ | *MD/ME 6 | 150 | 0.64] 1.5 | 2.0mv/C Pe epenture MA28W @ |*MF/MK| 6 | 100 |1.36| 3 | AVe/AT{ 4.6mv/*C Compensation | MA28T @ | *ML/MM 6 70 | 1.92 3 | 6.5mv/C MA704/A @ | MIK/MIL | 15/30} 30 | 0.4 1) *.5) 4 *] 10 MA704WA | @ M2P 15 30 | 0.4 1)*5) 1 7) 4 10 | Ande Gomnae MA704WK | @ M2R 15 30 | 0.4 1 | *1.5 1 *] 10 | excad Rae MA715 6) M2Y 30 30 | 1.0 30 | *1.5 1 *] 10 | Sones Cree TAR MA716 M1U 30 30 | 1.0 30 | *1.5 1 *] 10 | Sous coeeee TAR MA717 M2M 30 30 | 1.0 30 | *1.5) 1 *] 10 | eS a ignment MA7I7WA | @ M3E 30 30 | 1.0 30 | *1.5 1 *y 10 | xicse Coe Fm Yayk4 | MA7IT7WK | @ M30 30 30 | 1.0 30 | *1.5 1 a 10 | Qihoae nem Fe INU | MA720 M2w 40 500 | 0.55 | 500 | *60 O | *5 | 100 | Ren dignmennt MA721 MIM 30 200 | 0.55; 200 | 30 0 3 | 100 | RE sraoment Schottky | MA72IWA | @ M3H 30 | 200 | 0.55 | 200 | *30 0 | *3 | 100 | Anew onto 77m Barrier Di | MA72IWK | @) M3F 30 | 200 | 0.55 | 200 | *30 0 *3 | 100 | 22, i Ree Ae MA730 6) M2x 5 |*0,25 211.05) 05 | | | 227 Zieee TA MA740 6 M3C 30 | 200 '*0.55 | 200 | 30 0 3 10 | g27 Gee TAR sMA731 6 M3B 5 3 5 | | 0.98/05) | sMA786 M3T 30 | 100 | 0.55) 100 | *20 o | *2 | 100 bMA787 @ M3U 50 | 100 | 0.55) 100 | *25 0 | *3 | 100 LMA788 @ M3V 60 | 200 | 0.65 | 200 | *30 o | *3 | 100 IsMA789 M3W 60 | 500 | 0.65 | 500 | *60 0 | *5 | 100 Zener MANS Y-ZX | @ * 200 | 0.9 10 Vz=2.4~36V Tuning MA370 Mz 30 20 | 0.85] 20 | 0.65] 30 | r=2.00 MA551 MY 40 | 100 | 1.2 | 100 | 0.5 15 | #=0,002~6k01 at #=0.01~10mA. | Pin Di AGC MAS555 6 M2H 40 | 100 | 1.2 | 100 | 0.5 15 | SS Cae FA MA557 M30 30 | 100 [1.2 | 100 0.5 | 15 | | | 2 moe ram EEL S(t, TORIES THB FAL, OC BER oO @ @ @ =m T) = = = Cc co Co _ Co Panasonic 258