©2004 Fairchild Semiconductor Corporation Rev. B, October 2004
MPF102
Absolute Maximum Ratings *
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-So urce Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ +155 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -1. 0 µA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current V
GS
= -15V, V
DS
= 0 -2.0 nA
V
gs(off)
Gate-Source C utoff Voltage V
DS
= 15V, I
D
= 2nA -8.0 V
V
gs
Gate-Source Voltage V
DS
= 15V, I
D
= 200µA-0.5-7.5V
On Characteristics *
I
DSS
Zero-Gate Voltage Drain Current V
DS
= 15V, V
GS
= 0 2.0 20 mA
g
fs
Forward Transconductance V
GS
= 0V, V
DS
= 15V, f = 1kHz 2000 7500 µS
Small Signal Characteristics
C
iss
Common-Sour ce Input Capacitance V
GS
= 0, V
DS
= 15V, f = 1MHz 7.0 pF
C
rss
Comm on-Sour ce Revers e Transfer
Capacitance V
GS
= 0, V
DS
= 15V, f = 1MHz 3.0 pF
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
MPF102
TO-92
N-Channel RF Amplifier
This device is designed for electronic switching applications such as
low ON resistance analog switching.
Sourced from process 50.
1. Drain 2. Source 3. Gate
1
Package Dimensions
MPF102
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
Rev. B, October 2004©2004 Fairchild Semiconductor Corporation
©2004 Fairchild Semiconductor Corporation
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when properly used in accordance with instructions for use
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device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
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Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notic e in order to improve
design.
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Rev. I13
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