© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 600V-800V > BTA16-600SW3G, BTA16-800SW3G,
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
BTA16−600SW3G
BTA16−800SW3G
VDRM,
VRRM 600
800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 25°C IT (RMS) 16 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 170 A
Circuit Fusing Consideration (t = 8.3 ms) I2t120 A²sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3ms) VDSM/ VRSM VDSM/ VRSM
+100
V
Peak Gate Current (TJ = 110 °C, t ≤20 μs) IGM 4.0 A
Peak Gate Power (Pulse Width≤ 20 µs, TC = 80°C) PGM 20 W
Average Gate Power (TJ = 125°C) PG(AV) 1. 0 W
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
R8JC
R8JA
2.13
60
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds TL260 °C