© 2006 IXYS CORPORATION All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C85V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ85 V
VGSM Transient ± 20 V
ID25 TC= 25°C 152 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 410 A
IAR TC= 25°C25A
EAS TC= 25°C 750 mJ
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS 3 V/ns
TJ≤ 175°C, RG = 5 Ω
PDTC= 25°C 360 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-220 3 g
TO-263 2.5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA85V
VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 5.8 7.0 m Ω
TrenchMVTM
Power MOSFET
Preliminary Technical Information
N-Channel Enhancement Mode
Avalanche Rated
IXTA152N085T
IXTP152N085T
VDSS =85 V
ID25 = 152 A
RDS(on) ≤≤
≤≤
≤7.0 mΩΩ
ΩΩ
Ω
DS99532 (11/06)
TO-263 (IXTA)
TO-220 (IXTP)
GS
GDS
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA152N085T
IXTP152N085T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 60 A, Note 1 60 100 S
Ciss 5500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 720 pF
Crss 150 pF
td(on) Resistive Switching Times 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 50 ns
td(off) RG = 5 Ω (External) 50 ns
tf45 ns
Qg(on) 114 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 30 nC
Qgd 35 nC
RthJC 0.42°C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 152 A
ISM Pulse width limited by TJM 410 A
VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V
trr IF = 25 A, -di/dt = 100 A/µs90ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263AA (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220AB (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTA152N085T
IXTP152N085T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 76A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 152A
I
D
= 76A
Fig. 5. R
DS(on)
Normalized to I
D
= 76A Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA152N085T
IXTP152N085T
Fig. 7. Input Admittance
0
30
60
90
120
150
180
210
240
270
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
150ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 40 80 120 160 200 240
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
280
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 43V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2006 IXYS CORPORATION All rights reserved
IXTA152N085T
IXTP152N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
15
20
25
30
35
40
45
50
55
60
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanosecond
s
R
G
= 5Ω
V
GS
= 10V
V
DS
= 43V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
10
20
30
40
50
60
70
80
90
100
110
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t r
- Nanoseconds
23
25
27
29
31
33
35
37
39
41
43
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
TJ = 125ºC, V
GS
= 10V
V
DS
= 43V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
40
41
42
43
44
45
46
47
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
48
52
56
60
64
68
72
76
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GS
= 10V
V
DS
= 43V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
39
40
41
42
43
44
45
46
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
45
50
55
60
65
70
75
80
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω, VGS = 10V
VDS = 43V
TJ = 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
15
20
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
s
R
G
= 5Ω
V
GS
= 10V
V
DS
= 43V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
30
40
50
60
70
80
90
100
110
120
130
4 6 8 101214161820
R
G
- Ohms
t f
- Nanoseconds
20
40
60
80
100
120
140
160
180
200
220
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, VGS = 10V
VDS = 43V
I
D
= 50A
I
D
= 25A
IXYS REF: T_152N085T (4V) 6-12-06.xls
