TLP181
2017-05-12
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TO SHIBA Photocou pler GaAs Ired & Photo-Transistor
TLP181
Office Machine
Programmable Controllers
AC Adapter
I/O Interface Board
The TOSHIB A mini flat coupler TLP181 i s a sm all outline cou pler, suitab le for
surfa ce mount asse mb l y.
TLP181 consist of a photo transistor optically coupled to a gallium arsenide
infrared emitt ing dio de. Since TLP181 is smaller than DIP package, it’s
suitable for high-density surface mounting applications such as
programmable controllers.
• Collector-emitter volt age: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolatio n volta ge: 3750 Vrms (min)
• Operation Temperature: -55 to 110 ˚C
• Safety Standards
UL recognized: UL1577, File No. E67349
cUL recognized: CSA Component Acceptance Service No. 5A
File No.E67349
• Option (V4) type
VDE approved : EN60747-5-5
Maximum Operating Insuration Voltage: 565 Vpk
Highest Permissible Overvoltage: 6000 Vpk
Note: When a EN60747-5-5 appr ov ed type is nee ded,
Please designate “Option(V4)”
Pin Configuration (t op vi ew)
6
1: Anode
3: Cathode
4: Emitter
6: Collector
4
1
3
Unit:
mm
TOSHIBA 11-4C1
Weight : 0.09 g (Typ.)
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Current Transfer Ratio
Classification
(Note 1)
Current Transf er Ratio (%)
(IC/IF)
Marking Of Classification
IF = 5m A, VCE = 5V, Ta = 25°C
Min Max
Blank 50 600 Blank ,Y■,YE,G,G■,GR,B,BL,GB
Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL, B
Rank GB 100 600 GB , GR , G, G■, BL , B
Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 400 B
Note 1: EX, Rank GB: TLP181 (GB)
Note: Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181
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Absolute Maxim um Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 50 mA
Forward current det ating (Ta ≥ 89°C) ΔIF/°C -1.4 mA/°C
Pulse forward current (100μs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
Diode power dissipat i on PD 100 mW
Diode power dissipat i on derating (Ta ≥ 89°C)
Δ
PD/°C -2.8 mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collect or power dissipat i on PC 150 mW
Collect or power dissipat i on derati ng (Ta ≥ 25°C) ΔPC/°C -1.5 mW/°C
Junction temperature Tj 125 °C
Storage t emperature range Tstg -55 to 125 °C
Operating tem perature range Topr -55 to 110 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissi pation PT 200 mW
Total package power dissi pation derating (Ta ≥ 25°C) ΔPT/°C -2.0 mW/°C
Isolation voltage (AC, 60 s, R.H. ≤ 60%) (Note 1) BVS 3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating con diti on s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabil it y test
report and estimated failure rate, etc).
Note 1: Devi ce con sid ered a t w o-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 48 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Detector
Collector-emitter
breakdown voltage V(BR)CEO IC = 0.5 mA 80 — — V
Emitter-collector
breakdown voltage V(BR)ECO IE = 0.1 mA 7 — — V
Collector dark current ICEO
VCE = 48 V,
( Ambient light below 1000 lx) (Note 1) — 0.01
(2) 0.1
(10) μA
VCE = 48 V, Ta = 85°C,
( Ambient light below 1000 lx) (Note 1) — 2
(4) 50
(50) μA
Capacitance
(collector to emitter)
CCE V = 0 V, f = 1 MHz — 10 — pF
Note 1: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on MIn Typ. Max Unit
Current transf er ratio IC/IF IF = 5 mA, VCE = 5 V Rank GB
50 — 600 %
100 — 600
Saturated CTR IC/IF(sat) I F = 1 mA, VCE = 0. 4 V Rank GB
— 60 — %
30 — —
Collector-emitter saturation voltage VCE(sat)
IC = 2.4 mA, IF = 8 mA — — 0.4
V
IC = 0.2 mA, IF = 1 mA Rank GB
— 0.2 —
— — 0.4
Off-state collector current IC(off) VF = 0.7 V, VCE = 48 V — 1 10 μA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation resist ance RS VS = 500 V, R.H. ≤ 60% 1×1012 1014 — Ω
Isolation voltage BVS
AC, 60 s 3750 — — Vrms
AC, 1 s, in oil — 10000 —
DC, 60 s, in oi l — 10000 — Vdc
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100Ω
— 2 —
μs
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff — 3 —
Turn-on time tON RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
— 2 —
μs
Storage time ts — 25 —
Turn-off time tOFF — 40 —
Fig. 1 Switching time test circuit
tOFF
tON
VCE
IF tS
4.5V
0.5V
IF VCC
RL
VCE VCC
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PC – Ta
200
-20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty c ycl e r atio DR
Pulse forward current IFP (mA)
3000
10
Pulse width ≤ 100μs
Ta = 25°C
10-3 10-2 10-1 100
30
50
100
300
1000
500
ΔVF/ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF/ΔTa (mV/°C)
-3.2
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
-20
80
60
40
20
0 0 20 40 60 80 100 120
IF – VF
Forward voltage V F (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
-25°C 85°C 25
°C
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Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50mA
30mA
20mA
15mA
10mA
PC (max)
IF = 5mA
Ta = 25°C
Collector-emitter voltage VCE (V)
IC – VCE
30
0
0 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50mA
Ta = 25°C
40mA
30mA
20mA
10mA
5mA
2mA
IC – IF
Forward current IF (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample A
Sample B
Ta = 25°C
VCE = 10V
VCE = 5V
VCE = 0.4V
Collector current IC (mA)
Forward current IF (mA)
1000
10
IC/IF – IF
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25°C
Current transf er ratio
IC/IF (%)
Sample B
Sample A
Collector dark current ICEO (μA)
ICEO – Ta
0
101
VCE = 48V
5V
10V
24V
20 40 60 80 100
Ambient temperature Ta (°C)
100
10-1
10-2
10-3
10-4
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Collector-emitter saturation
voltage VCE(sat) (V)
VCE(sat) – Ta
0.24
0
Ambient temperature Ta (°C)
-40
0.20
0.12
0.08
0.04
-20 0 40 80 100 20 60
0.16
IF = 1mA
IC = 0.2mA
IC – Ta
100
1
-20 100
0 20 40 80
30
5
Collector current IC (mA)
VCE = 5V
60
0.1
0.3
0.5
3
10
50
1mA
0.5mA
5mA
10mA
IF = 25mA
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (kΩ)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (μs)
5
3
1
Ta = 25°C
IF = 1 6mA
VCC = 5V
tOFF
ts
tON
100 10
Switching time (μs)
Switching Time – Ta
0
100
-20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1 100
0.3
3
5
50 tOFF
ts
tON
IF = 1 6mA
VCC = 5V
RL = 1.9kΩ
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (coll ect i vely "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, soft ware and systems (coll ect i vel y "Product" ) without not ice.
• This document and any information herein may not be reproduced without pri or writt en permission from TOSHIBA. Even with
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• Though TOSHIBA works continually to improve Product's qual ity and reliabil i t y, Product can m alfunct i on or fail. Custom ers a re
responsibl e for complyi ng with safety standards and for providing adequate designs and safeguards for their hardware, soft ware and
systems which minimi ze risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product int o their own applicati ons, cust om ers must also ref er to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the " T OSH IBA Semiconductor Reliability Handbook" and (b) the in structions for
the applicati on with which the Product will be used with or for. Customers are solely responsi ble for all aspects of thei r own product
design or applications, i ncludi ng but not limit ed to (a) determini ng the appropriateness of the use of this Product in such design or
applicat i ons; (b) evaluati ng and determi ni ng the applic abi l ity of any informati on contained i n this document, or in charts, diagrams,
programs, al gorithms, s ample applic ation circuits, or any other referenced documents; and (c) validat i ng all operat i ng parameters f or
such designs and applications. TOSHIB A ASSUME S NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEI THE R INTENDE D NO R WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QU ALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SE RIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use i ncludes, without
limitati on, equipm ent used in nuclear fac ili t i es, equipm ent used in the aerospace industry, medical equipment, equipment used for
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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to hum ans if consu med or ab sorbed, w hether in the form of du st or vapor.
Handle with care and do not break, cut, crush, grind, dissol ve chemically or ot herwise expose GaAs i n Product.
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Please use Product in compliance with all appli cable laws and regulations that regulate the inclusion or use of controlled subst ances,
including without limi t ation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIAB ILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.