STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
■TYPICAL RDS(on) = 3.3 Ω
■EX TRE M E LY HIG H dv/ dt CAP A BI LIT Y
■100% AVALANCHE TEST ED
■VERY LOW INTRINSIC CAPACITANCES
■GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■HIGH CURRE NT , HIG H SP E ED SWI TCHING
■SWITCH MODE POW ER SUPPLIES (SMPS)
■DC-AC CON VERT ERS FO R WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INT E R NAL SCH E M ATI C DIAG RA M
March 1998
TO-220 TO-220F P
123
123
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP3NB60 STP3NB60FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain- g ate Voltage (RGS = 20 kΩ)600 V
VGS Gate-source Voltage ± 30 V
IDDrain Current (continuous) at Tc = 2 5 oC 3.3 2.2 A
IDDrain Current (continuous) at Tc = 1 00 oC 2.1 1.4 A
IDM(•) Drain Current (pulsed) 13.2 13.2 A
Ptot Total Dissipation at Tc = 25 oC8035W
Derating Factor 0.64 0.28 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
TYPE VDSS RDS(on) ID
STP3NB60
STP3NB60FP 6 00 V
600 V <3.6 Ω
< 3.6 Ω3.3 A
2.2 A
1/9
THERMAL DATA
TO-220 TO220-FP
Rthj-case Thermal Resistance Junction-ca se Max 1.56 3.57 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Tem perature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALAN CHE CHARACT ERI STICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%) 3.3 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V) 100 mJ
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 250 µA VGS = 0 600 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating Tc = 125 oC1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 30 V ± 100 nA
ON (∗)
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage VDS = VGS ID = 250 µA345V
R
DS(on) Static Drain-source On
Resistance VGS = 10V ID = 1 .6 A 3.3 3.6 Ω
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V 3.3 A
DYNAMIC
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance VDS > ID(on) x RDS(on)max ID = 1.6 A 1.2 2 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 400
57
7
520
77
9
pF
pF
pF
STP3NB60/FP
2/9
ELE CT RICAL CHAR ACT ERISTI CS (continued)
SWI TCHING ON
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD = 300 V ID = 1.6 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figu re 3)
11
717
11 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Cha rge
VDD = 480 V ID = 3.3 A VGS = 10 V 15
6.2
5.6
22 nC
nC
nC
SWI TCHING OFF
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480 V ID = 3.3 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figu re 5)
11
13
18
16
18
25
ns
ns
ns
SOUR CE DRAI N DIO DE
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
3.3
13.2 A
A
VSD (∗) Forward On Voltage ISD = 3.3 A VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 3.3 A di/dt = 100 A/µs
VDD = 100 V T j = 150 oC
(see test circuit, figu re 5)
500
2.1
8.5
ns
µC
A
(∗) P ulsed: Pul se duration = 300 µs, dut y cy cle 1.5 %
(•) Pulse width limit e d by safe operating area
Safe O perat ing Area for T O-220 Safe O perating Ar ea for T O-220F P
STP3NB60/FP
3/9
Therm al Impedance for TO- 22 0
Out put Charact eris tics
Transconductance
Thermal Impedance forTO-220FP
Trans fer Charac teris tic s
Stat ic Drain-s ource On Resist a nce
STP3NB60/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Sourc e-drain Diode Forward Charac teris tic s
Capacitance V ariations
Normalized On Resistance vs Temperature
STP3NB60/FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Swit ching Tim es Test Circ uits For
Resistive Load
Fi g . 2 : Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times
STP3NB60/FP
6/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP3NB60/FP
7/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-2 20FP ME CH ANI CAL DAT A
STP3NB60/FP
8/9
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of s uch information nor for any i nfringement of patent s or other ri ghts of t hird parties which may results fro m it s use. No
license is grant ed by implicat ion or otherwise under any pat ent or p atent rights of SGS-THOMSON Microelectronic s. Specificat ions m enti oned
in this publicat io n are subject to chang e without notice. This publicati on supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems wit hout express
written ap proval of SGS-THOMSON Microelectonics.
© 199 8 SGS-THOMSON Microelectronic s - Printed in It aly - All Rights Reserve d
SGS-THOMSON Microe lectronics GROUP OF COMPANIES
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STP3NB60/FP
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