BSS670S2LH6327 - Infineon Technologies AG

2011-07-08

Rev. 2.5 Page 1

BSS670S2L

OptiMOS Buck converter series

Product Summary

VDS 55 V

RDS(on) 650 mΩ

ID0.54 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

PG-SOT 23

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

BSs

Type Package Tape and Reel

BSS670S2L PG-SOT 23 H6327: 3000 pcs/reel

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

0.54

0.43

A

Pulsed drain current

TA=25°C

ID puls 2.2

Gate source voltage VGS ± 20 V

Power dissipation

TA=25°C

Ptot 0.36 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Avalanche energy, single pulse ID = 0.54 A, RG = 25 Ω 1) EAS 8.1 mJ

Avalanche rated 1)

•

• •

1)

Valid from devices with date code 0604 onwards

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

2011-07-08

Rev. 2.5 Page 2

BSS670S2L

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 3) RthJS - - 290 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

RthJA

-

350

300

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=1mA

V(BR)DSS 55 - - V

Gate threshold voltage, VGS = VDS

ID=2.7µA

VGS(th) 1.2 1.6 2

Zero gate voltage drain current

VDS=55V, VGS=0, Tj=25°C

VDS=55V, VGS=0, Tj=150°C

IDSS

-

0.01

1

0.1

10

µA

Gate-source leakage current

VGS=20V, VDS=0V

IGSS -1 100 nA

Drain-source on-state resistance

VGS=4.5V, ID=270mA

RDS(on) -430 825 mΩ

Drain-source on-state resistance

VGS=10V, ID=270mA

RDS(on) -346 650

2)

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2011-07-08

Rev. 2.5 Page 3

BSS670S2L

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=0.54A

0.6 1.2 -S

Input capacitance Ciss VGS=0, VDS=25V,

f=1MHz

-56 75 pF

Output capacitance Coss -13 18

Reverse transfer capacitance Crss -7 10

Turn-on delay time td(on) VDD=30V, VGS=4.5V,

ID=0.54A,

RG=130Ω

-9 14 ns

Rise time tr-25 37

Turn-off delay time td(off) -21 31

Fall time tf-24 32

Gate Charge Characteristics

Gate to source charge Qgs VDD=40V, ID=0.54A -0.19 0.25 nC

Gate to drain charge Qgd -0.57 0.86

Gate charge total QgVDD=40V, ID=0.54A,

VGS=0 to 10V

-1.7 2.26

Gate plateau voltage V(plateau) VDD=40V, ID=0.54A -3.1 -V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - 0.38 A

Inv. diode direct current, pulsed ISM - - 2.2

Inverse diode forward voltage VSD VGS=0, IF=0.54A -0.8 1.1 V

Reverse recovery time trr VR=30V, IF=lS,

diF/dt=100A/µs

-51 64 ns

Reverse recovery charge Qrr -22 28 nC

2011-07-08

Rev. 2.5 Page 4

BSS670S2L

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W

0.38 BSS670S2L

Ptot

2 Drain current

ID = f (TA)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 °C 160

TA

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

A

0.6 BSS670S2L

ID

4 Transient thermal impedance

ZthJS = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

K/W BSS670S2L

ZthJS

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

10 -1 10 0 10 1 10 2

VVDS

-3

10

-2

10

-1

10

0

10

1

10

A

BSS670S2L

ID

R DS(on) = V DS / I D

DC

10 ms

1 ms

100 µs

tp = 23.0µs

2011-07-08

Rev. 2.5 Page 5

BSS670S2L

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

00.5 11.5 22.5 33.5 4 V 5

VDS

0

0.5

1

1.5

2

A

3

ID

3V

3.5V

4V

4.5V

10V

6V

5V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS

00.2 0.4 0.6 0.8 A 1.2

ID

0

100

200

300

400

500

600

700

800

900

1000

1100

1200

mΩ

1500

RDS(on)

3.5V

4V

4.5V

5V

6V

10V

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 80 µs

00.5 11.5 22.5 33.5 4 V 5

VGS

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

A

2.2

ID

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: gfs

00.4 0.8 1.2 1.6 A 2.2

ID

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

S

2.2

gfs

2011-07-08

Rev. 2.5 Page 6

BSS670S2L

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 270 mA, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

200

400

600

800

1000

1200

1400

1600

mΩ

1900 BSS670S2L

RDS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 180

Tj

0

0.5

1

1.5

V

2.5

VGS(th)

2 µA

10 µA

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz

0 5 10 15 20 V30

VDS

0

10

1

10

2

10

3

10

pF

C

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

00.4 0.8 1.2 1.6 22.4 V3

VSD

-2

10

-1

10

0

10

1

10

A

BSS670S2L

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2011-07-08

Rev. 2.5 Page 7

BSS670S2L

13 Typ. gate charge

VGS = f (QGate)

parameter: ID = 0.54 A pulsed

00.4 0.8 1.2 1.6 2nC 2.6

QGate

0

2

4

6

8

10

12

V

16 BSS670S2L

VGS

0,8 VDS max

DS max

V

0,2

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

parameter: ID=10 mA

-60 -20 20 60 100 °C 180

Tj

50

52

54

56

58

60

62

V

66 BSS670S2L

V(BR)DSS

Published by

Infineon Technologies AG

81726 Munich, Germany

All Rig hts Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated here in and/or any inf o r mation re gar d ing the ap plication of the devic e ,

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of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the neare st Infineon Tec hnologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Of f ice.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or p rotect human life. I f the y f ail, it is r e as onable to as s ume that the health of the user

or other persons may be endangered.

2011-07-08

Rev. 2.5 Page 7

BSS670S2L