© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 80 A
IDM TC= 25°C, Pulse Width Limited by TJM 220 A
IATC= 25°C25A
EAS TC= 25°C 400 mJ
PDTC= 25°C 230 W
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
DS99648A(11/09)
IXTA80N10T
IXTP80N10T
VDSS = 100V
ID25 = 80A
RDS(on) ≤≤
≤≤
≤ 14mΩΩ
ΩΩ
Ω
TrenchMVTM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
GDS
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 105 V
VGS(th) VDS = VGS, ID = 100μA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = 105V, VGS= 0V 5 μA
TJ = 150°C 150 μA
RDS(on) VGS = 10V, ID = 25A, Note 1 & 2 14 mΩ
Features
zInternational Standard Packages
z175°C Operating Temperature
zAvalanche Rated
zHigh Current Handling Capability
z Fast Intrinsic Diode
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zAutomotive
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
- ABS Systems
zDC/DC Converters and Off-Line UPS
zPrimary Switch for 24V and 48V
Systems
zHigh Current Switching Applications
zDistributed Power Architechtures
and VRMs
zElectronic Valve Train Systems
IXTA80N10T
IXTP80N10T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-kole packages RDS(on) Kelvin test contact location
must be 5 mm or less from the package body.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 33 55 S
Ciss 3040 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 420 pF
Crss 90 pF
td(on) 31 ns
tr 54 ns
td(off) 40 ns
tf 48 ns
Qg(on) 60 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 21 nC
Qgd 15 nC
RthJC 0.65 °C/W
RthCS 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 80 A
ISM Repetitive, Pulse Width Limited by TJM 220 A
VSD IF = 25A, VGS = 0V, Note 1 1.1 V
trr 100 ns
IF = 25A, -di/dt = 100A/μs
VR = 50V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 15Ω (External)
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-263 (IXTA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
1. Gate
2. Drain
3. Source
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA80N10T
IXTP80N10T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
280
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
7V
8V
9V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 150ºC
0
10
20
30
40
50
60
70
80
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 40A Value vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 80A
I
D
= 40A
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Value
vs. D r ai n C u r r en t
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
4.2
4.6
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - - T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u r r en t vs. C ase Temp er atu r e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
IXTA80N10T
IXTP80N10T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0 20406080100120140160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
In tr i n si c D i o d e
0
40
80
120
160
200
240
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g. 12. Maximu m Tr an si ent Thermal I mp e d ance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_80N10T(3V)12-11-07-A
IXTA80N10T
IXTP80N10T
Fi g. 14. R esi st i v e Turn- o n
Ri se Time vs. D r ai n C u r r en t
35
40
45
50
55
60
65
70
75
80
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
r - Nanoseconds
RG
= 15 , VGS = 10V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
Fi g . 15. R esisti ve Tu r n-o n
Switch i ng Ti mes vs. Gate Resi stance
0
40
80
120
160
200
240
280
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t r
- Nanoseconds
25
35
45
55
65
75
85
95
t
d
(
o n
)
- Nanoseconds
t r td(on)
- - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 30A
I D = 10A
Fi g . 16. R esisti ve Tu r n-o ff
Switch in g Ti mes vs. Jun ctio n Temperatu r e
39
40
41
42
43
44
45
46
47
48
49
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
36
40
44
48
52
56
60
64
68
72
76
t
d
(
o f f
)
- Nanoseconds
t f td(off)
- - - -
RG = 15, VGS = 10V
VDS = 50V
I D = 10A
I D = 30A
Fig. 17. R esisti ve Turn -o f f
Switc h i ng Ti mes v s. Drain C urren t
38
40
42
44
46
48
50
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
f
- Nanoseconds
30
38
46
54
62
70
78
t
d
(
o f f
)
- Nanoseconds
t f td(off)
- - - -
RG = 15, VGS = 10V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
Fig. 13. R esisti ve Turn -o n
Ri se Time vs. Ju n cti o n Temp era tu r e
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r - Nanoseconds
RG
= 15 , VGS = 10V
VDS = 50V
I D = 30A
I D = 10A
Fi g . 18. R esi sti ve Tur n -o ff
Switch i n g Times vs. Gate R esi sta n ce
40
60
80
100
120
140
160
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
30
70
110
150
190
230
270
t
d
(
o f f
)
- Nanoseconds
t f td(off)
- - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 30A
I D = 10A
